Epitaxial Growth of MnSb Sputtered Films on Si Substrates-Control of Grain Orientation in MnSb Films-

The epitaxial growth and the formation of an interface layer for MnSb sputtered films fabricated on Si (111) single crystal substrates was investigated. It was found that (1) at Tsub=200 °C, MnSb grains grew epitaxially with (101) orientation as the dominant crystal orientation on a Si (111) substrate and (2) at Tsub=250 °C (a) in the thickness region from 0 to 70 nm, a MnSi reacted layer was formed and grown epitaxially with (111) orientation, (b) in the thickness region over 70 nm, MnSb grains were formed and grown epitaxially with c-plane orientation on the MnSi interface layer.

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Analysis of growing mechanism for MnSb epitaxial films fabricated on a Si substrate by dc sputtering

Ashizawa

Saito

Takahashi

2002

Journal of Applied Physics

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Epitaxial Growth of MnSb Sputtered Films: Influence of Charged Particles of Epitaxial Growth.

Oguma¹,

Kudo²,

Saito³

et al. 1999

J. Magn. Soc. Jpn.

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Epitaxial Growth of MnSb Films Fabricated by Planar Sputtering: Effect of Substrate Temperature and Bias on Epitaxial Growth.

Saito¹,

Ashizawa²,

Shoji³

et al. 2000

J. Magn. Soc. Jpn.

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Epitaxial Growth of MnSb Sputtered Films on Si Substrates-Control of Grain Orientation in MnSb Films-

Cited by 4 publications

References 12 publications

Analysis of growing mechanism for MnSb epitaxial films fabricated on a Si substrate by dc sputtering

Analysis of growing mechanism for MnSb epitaxial films fabricated on a Si substrate by dc sputtering

Epitaxial Growth of MnSb Sputtered Films: Influence of Charged Particles of Epitaxial Growth.

Epitaxial Growth of MnSb Films Fabricated by Planar Sputtering: Effect of Substrate Temperature and Bias on Epitaxial Growth.

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