Epitaxial growth of monoclinic and cubic ZrO2 on Si(100) without prior removal of the native SiO2

Lubig, A.; Buchal, Ch.; Guggi, D.; Jia, C. L.; Stritzker, B.

doi:10.1016/0040-6090(92)90617-k

Cited by 60 publications

(19 citation statements)

References 11 publications

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“…[1][2][3][4][5][6] The epitaxial films on these fluorite type oxides on Si are attractive materials for potential application in making highly integrated circuits as an alternative SiO 2 layer, and for use in superconductors with high critical current density as buffer layers between oxide superconductor and Si. Especially, Y 2 O 3 has a cubic Mn 2 O 3 structure with a well-matched lattice parameter of 10.60 Å to Si ͑as compared to 5.43 Å for Si͒ and has a good chemical stability with a high melting point of 2350°C.…”

Section: Temperature Dependence Of the Properties Of Heteroepitaxial mentioning

confidence: 99%

Temperature dependence of the properties of heteroepitaxial Y2O3 films grown on Si by ion assisted evaporation

Cho

Jeong

et al. 1999

Journal of Applied Physics

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Heteroepitaxial growth behavior of SrRuO 3 / SrTiO 3 (001) by pulsed laser depositionHeteroepitaxial Y 2 O 3 films were grown on an Si͑111͒ substrate by ion assisted evaporation in an ultrahigh vacuum, and their properties such as crystallinity, film stress, and morphological change were investigated using the various measurement methods. The crystallinity was assessed by x-ray diffraction ͑XRD͒ and reflection high-energy electron diffraction. Interface crystallinity was also examined by Rutherford backscattering spectroscopy ͑RBS͒ channeling and transmission electron microscopy. The strain of the films was measured by RBS channeling and XRD. Surface and interface morphological characteristics were observed by atomic force microscopy and x-ray scattering method. By comparing the interface with the surface characteristics, we can conclude that many defects at the interface region were generated by interface interaction between the yttrium metal and Si substrate. Moreover, the film quality dominantly depended on the deposition temperature. The crystallinity was greatly improved and the surface roughness was drastically decreased in the temperature range 500-600°C. On the other hand, in the temperature range 600-700°C, the compressive stress and film density were further increased, and the island size decreased. Also, the shape of the surface islands was transformed from elliptical to triangular. The film stress was found primarily at the interface area because of the interaction between yttrium and Si substrate.

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Section: Temperature Dependence Of the Properties Of Heteroepitaxial mentioning

confidence: 99%

Temperature dependence of the properties of heteroepitaxial Y2O3 films grown on Si by ion assisted evaporation

Cho

Jeong

et al. 1999

Journal of Applied Physics

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“…In contrast to many other materials, removing the native oxide is not necessary to obtain epitaxy. Lubig et al 1 have reported a minimum channeling of Ϸ6% in epitaxial YSZ films deposited by electron beam on Si͑100͒ wafers without removing the native oxide.…”

Section: Y Maniettementioning

confidence: 99%

“…The 0°epitaxy corresponds to a lattice mismatch of 5.5% and has been observed in films grown by other authors. 1 There have been a number of reports of epitaxial growth of YSZ films on Si͑100͒ substrates with different surface conditions. Fork et al 5 obtained the best films reported on hydrogen terminated silicon, but other groups have reported epitaxy on uncleaned substrates.…”

Section: Y Maniettementioning

confidence: 99%

See 1 more Smart Citation

ArF and KrF excimer laser deposition of yttria-stabilized zirconia on Si(100)

Delgado

Sánchez

Aguiar

et al. 1996

Applied Physics Letters

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Yittria-stabilized zirconia films have been deposited on Si(100) substrates by ArF (193 nm) and KrF (248 nm) laser ablation. By using KrF radiation, high-quality (h00) epitaxial films are obtained on bare silicon. Epitaxy, although with slightly worse properties, is also obtained on substrates covered with a native oxide. Films have been deposited by ArF laser ablation over a wide range of substrate temperature and oxygen partial pressure and with variation in substrate surface cleaning. These films are polycrystalline and texture or epitaxy have not been obtained in any case. These results reveal that laser wavelength is a crucial factor in determining film properties.

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“…As a pure material, it exists in the monoclinic, tetragonal, and cubic structures. [1,2] Phase transformations between ZrO 2 polymorphs are accompanied by significant volume change, which causes the variation of residual stress and deteriorates the mechanical performances. An effective way of obtaining stable single phase is to add a convenient amount of oxides, such as CaO, Y 2 O 3 , etc.…”

Section: Influence Of Ytterbia Content On Residualmentioning

confidence: 99%

Influence of Ytterbia Content on Residual Stress and Microstructure of Y ₂ O ₃ -ZrO ₂ Thin Films Prepared by EB-PVD _*

Xiao¹,

Sriu-Ying²,

He³

et al. 2008

Chinese Phys. Lett.

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Y2O3 stabilized ZrO2 (YSZ) thin films with different Y2O3 molar contents (0, 3, 7, and 12 mol%) PACS : 78. 20. Ci, 68. 55. Nq Zirconium dioxide (ZrO 2 ) is useful for optical devices because of its desirable properties such as high refractive index, high transparency in the visible, near-infrared region and high damage threshold value of repetitive pulsed laser. As a pure material, it exists in the monoclinic, tetragonal, and cubic structures.[1,2] Phase transformations between ZrO 2 polymorphs are accompanied by significant volume change, which causes the variation of residual stress and deteriorates the mechanical performances. An effective way of obtaining stable single phase is to add a convenient amount of oxides, such as CaO, Y 2 O 3 , etc.[3,4] Among them, Y 2 O 3 is the most frequently used material as a stabilizer.Y 2 O 3 stabilized ZrO 2 (YSZ) thin films have a wider range of potential applications such as high reflectivity mirrors, thermal barrier coatings and multiple layer systems for optical filters. [5−7] Over the past two decades, a large number of stress data has been reported in the literature of YSZ films for thermal ceramic barrier coatings prepared by various processes.[8−10] Comparatively, there is fewer work performed on residual stresses in electron-beamevaporated YSZ films for optical applications. Residual stresses in thin films can cause severe problems for a number of applications in advanced technology. For instance, residual stress on the surface of substrates can lead to deformation of the wave front of an incident beam reflecting on the optical device and accelerates coupling of thermal force in the films. Thus, knowledge of the stress state is necessary to understand its evolution, assess its impact on the lifetime and function of the coated part, and to enable the control of the stress by modification of the manufacturing process.There are several commonly used methods of stress determination in coatings: mathematical modelling (analytical or numerical), material removal techniques (hole drilling, layer removal), mechanical methods (curvature, displacement, or strain measurement) and diffraction (x-ray or neutron) methods. Each technique has certain advantages and limitations, [11,12] which is determined by such factors as shape, dimensions, materials of the coating and the substrate, knowledge of the constituents' properties and processing conditions, and also the availability of the necessary equipment. In this work, residual stresses of YSZ films deposited on glass by electron beam evaporation method are characterized by the curvature measurement and x-ray diffraction method. The effects of different Y 2 O 3 contents on the phase compositions, structures and residual stresses of the films are revealed, and the relations between residual stresses and structures are also discussed.YSZ thin films were deposited on BK7 glass substrates (Φ 30 × 3 mm) by electron beam evaporation. The substrates were cleaned ultrasonically in alcoholic solution. The base pressure of all depos...

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Epitaxial growth of monoclinic and cubic ZrO2 on Si(100) without prior removal of the native SiO2

Cited by 60 publications

References 11 publications

Temperature dependence of the properties of heteroepitaxial Y2O3 films grown on Si by ion assisted evaporation

Temperature dependence of the properties of heteroepitaxial Y2O3 films grown on Si by ion assisted evaporation

ArF and KrF excimer laser deposition of yttria-stabilized zirconia on Si(100)

Influence of Ytterbia Content on Residual Stress and Microstructure of Y ₂ O ₃ -ZrO ₂ Thin Films Prepared by EB-PVD _*

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Epitaxial growth of monoclinic and cubic ZrO2 on Si(100) without prior removal of the native SiO2

Cited by 60 publications

References 11 publications

Temperature dependence of the properties of heteroepitaxial Y2O3 films grown on Si by ion assisted evaporation

Temperature dependence of the properties of heteroepitaxial Y2O3 films grown on Si by ion assisted evaporation

ArF and KrF excimer laser deposition of yttria-stabilized zirconia on Si(100)

Influence of Ytterbia Content on Residual Stress and Microstructure of Y 2 O 3 -ZrO 2 Thin Films Prepared by EB-PVD *

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Influence of Ytterbia Content on Residual Stress and Microstructure of Y ₂ O ₃ -ZrO ₂ Thin Films Prepared by EB-PVD _*