Epitaxial growth of nonpolar ZnO on MgO (100) substrate by molecular beam epitaxy

Lu, C.-Y.J.; Chang, Liuwen; Chou, Mitch M. C.

doi:10.1016/j.jcrysgro.2012.12.163

Cited by 11 publications

(2 citation statements)

References 19 publications

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“…There are already several reports [1][2][3][4][5] about ZnO thin films grown on MgO (001) substrates. Interestingly, ZnO films can be grown along different crystalline directions on the same MgO (001) substrates under different growth conditions or using different growth methods.…”

Section: Introductionmentioning

confidence: 99%

“…On the one hand, we can realize band-gap engineering on wurtzite ZnO through alloying it with cubic MgO; on the other hand, growing wurtzite ZnO on the MgO substrates might offer some guidelines for integrating wurtzite ZnO films with more complicated perovskite cubic substrates, for example, knowledge that is desirable for combining semiconductor-based “active” devices and perovskite-based “passive” ones. Already there are several reports − of ZnO thin films grown on MgO (001) substrates.…”

Section: Introductionmentioning

confidence: 99%

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Evolution of Wurtzite ZnO Films on Cubic MgO (001) Substrates: A Structural, Optical, and Electronic Investigation of the Misfit Structures

Zhou

Wang

et al. 2014

ACS Appl. Mater. Interfaces

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We investigated the interface between hexagonal ZnO films and cubic MgO (001) substrates, fabricated via molecular beam epitaxy. X-ray diffraction and (scanning) transmission electron microscopy revealed that growth follows the single [0001] direction when the temperature of the substrate is above 200 °C, while when the substrate temperature is below 150 °C, growth initially is along [0001] and then mainly changes to [0-332] variants beyond a thickness of ∼10 nm. Interestingly, a double-domain feature with a rotational angle of 30° appears during growth along [0001] regardless of the temperature, experimentally demonstrating the theoretical predictions for the occurrence of double rotational domains in such a heteroepitaxy [Grundmann et al., Phys. Rev. Lett. 105, 146102 (2010)]. We also found that the optical properties of the ZnO film are influenced greatly by the mutation of growth directions, stimulated by the bond-length modulations, as we determined from X-ray absorption spectra at Zn K edge. These results also showed the evolution of the 4p(xy) and 4p(z) states in the conduction band with the rise in the temperature for growth. We consider that our findings may well promote the applications of ZnO in advanced optoelectronics for which its integration with other materials of different phases is desirable.

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