Epitaxial growth of semipolar InN($10\bar{1}3$) on LaAlO₃substrate: Epitaxial relationship analysis

Abstract

Epitaxial semipolar InN() crystals were grown on a LaAlO3(112) substrate using radio frequency plasma-assisted molecular beam epitaxy without any interlayer. The lattice mismatch between InN and LaAlO3 was estimated to be −7.75% along the []InN direction and 0.2% along the []InN direction. The InN film is epitaxic with the LaAlO3 substrate, with orientation relationships between InN() ∥ LaAlO3(112) and []InN ∥ []LAO. InN grown on LaAlO3(112) appears () plane orientated, with two types of domains. Semipolar InN() layers can be grown at 510 °C and show X-ray rocking curve FWHMs of 1830 and 1408 arcsec for InN(0002) and InN(), respectively. However, InN grown at 510 °C has the highest peak intensity and the narrowest FWHM of the prepared samples, indicating high-quality crystal growth.