Epitaxial growth of single-crystalline Ni46Co4Mn37In13 thin film and investigation of its magnetoresistance

Jing, Chao; Yang, Yejun; Wang, Xiaolong; Liao, Pan; Zheng, Dong; Kang, Baojuan; Cao, Shixun; Zhang, Jincang; Zhu, Jianguo; Li, Zhe

doi:10.1016/j.pnsc.2014.01.005

Cited by 6 publications

(1 citation statement)

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“…The curves are linear with n ≈ 1, for all the measurements. There is little variation in n. The value is close to those reported for the s-d scattering [32]. We further fit the MR data with ρ/ρ 0 = − γ H + βH 2 , and obtained β/γ ≈ 10 −6 , which again confirms that the behavior is almost linear in the high-field region and mostly dominated by the s-d scattering [12,29,33,34].…”

Section: Angle Dependence Of Magnetoresistancesupporting

confidence: 84%

Spin-valve-like magnetoresistance in a Ni-Mn-In thin film

et al. 2018

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Spin valve devices, the resistive state of which is controlled by switching the magnetization of a free ferromagnetic layer with respect to a pinned ferromagnetic layer, rely on the scattering of electrons within the active medium to work. Here we demonstrate spin-valve-like effect in the Ni-Mn-In thin films, which consists of a ferromagnetic phase embedded in an antiferromagnetic matrix. Through transport and magnetic measurements, we confirm that scattering at the interfaces between the two phases gives rise to a unidirectional anisotropy and the spin-valve-like effect in this system. The magnitude of the spin-valve-like magnetoresistance (about 0.4% at 10 K) is stable within the temperature range of 10-400 K. The low-and high-resistance states cannot be destroyed even under a high magnetic field of 100 kOe. This finding opens up a way of realizing the spin valve effect in materials with competing ferromagnetic and antiferromagnetic interactions, where the interface between these phases acts as the active medium.

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