Epitaxial growth of solid solutions of ZnSiP2 in Si

Попов, В. П.; Pamplin, Brian

doi:10.1016/0022-0248(72)90134-0

Cited by 17 publications

(8 citation statements)

References 6 publications

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“…77) The removal of P has also been achieved at fractions of 54.2% and 66.7%. However, the removal fractions are smaller than expected, which might be due to the formation of a ZnSiP 2 compound with a melting point of 1643 K. 81,82) Concerning the removal fraction of O, high values of 80.8% and 90.0% were obtained, which is inconsistent with the calculated distribution coefficient of 1.2 © 10 4 . As the concentration of O in MG-Si is obviously higher than the solubility limit in the solid Si phase, 83) the presence of some oxides, except for SiO 2 , such as CaO, in MG-Si is indicated.…”

Section: Impurity Analysis Of Silicon Samplesmentioning

confidence: 74%

Silicon Refining by Solidification from Liquid Si–Zn Alloy and Floating Zone Method

Yasuda

Ido

et al. 2021

Mater. Trans.

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This study evaluated the refining ability of a proposed production process for solar-grade silicon utilizing the electrolytic reduction of SiO 2 on a liquid zinc electrode in molten salt. The distribution behaviors of impurity elements during the precipitation of solid silicon from a liquid SiZn alloy were studied by thermodynamic calculations at 923 K. In the precipitation experiment, silicon granules were recovered from a liquid SiZn alloy, which was prepared from metallurgical-grade silicon. The impurity removal ratios exceeded 99% for C, Al, and Ca, and 90% for Fe. High removal ratios were attained for B and O as well. As the post-processing, a silicon ingot was produced from the precipitated silicon granules by the floating zone method. The Zn residue in the precipitated silicon was completely evaporated during the floating zone refining. The total content of metallic elements (Al, Ca, Fe, Ti, and Zn) was lower than 0.2 ppmw, even though metallurgical-grade silicon was used as the starting material.

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Section: Impurity Analysis Of Silicon Samplesmentioning

confidence: 74%

Silicon Refining by Solidification from Liquid Si–Zn Alloy and Floating Zone Method

Yasuda

Ido

et al. 2021

Mater. Trans.

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“…12,26,41,42 Growth of Si/ZnSiP 2 interfaces has been demonstrated through heteroepitaxial crystallization of Si on ZnSiP 2 substrates, 40 growth of polycrystalline ZnSiP 2 on Si 43 , and epitaxial ZnSiP 2 on Si by vaporliquid-solid growth. 44 While photoconductivity has been demonstrated, no PV devices have been realized to date. 2,3,45 A ZnSiP 2 /Si device may be expected to have good light transmission through the top cell and into the bottom cell, because ZnSiP 2 has little parasitic belowband-gap absorption and good index of refraction matching with Si (reflection at the Si/ZnSiP 2 interface would be less than 1%).…”

Section: Introductionmentioning

confidence: 99%

Solar energy conversion properties and defect physics of ZnSiP₂

Martinez

Warren

Gorai

et al. 2016

Energy Environ. Sci.

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Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need for optically active, wide band gap materials that can be integrated with Si. ZnSiP 2 is a stable, wide band gap (2.1 eV) material that is lattice matched with silicon and comprised of inexpensive elements. As we show in this paper, it is also a defect-tolerant material. Here, we report the first ZnSiP 2 photovoltaic device. We show that ZnSiP 2 has excellent photoresponse and high open circuit voltage of 1.3 V, as measured in a photoelectrochemical configuration. The high voltage and low band gap-voltage offset are on par with much more mature wide band gap III-V materials. Photoluminescence data combined with theoretical defect calculations illuminate the defect physics underlying this high voltage, showing that the intrinsic defects in ZnSiP 2 are shallow and the minority carrier lifetime is 7 ns. These favorable results encourage the development of ZnSiP 2 and related materials as photovoltaic absorber materials. Broader ContextOf all the renewable energy technologies, solar photovoltaic electricity has one of the highest resource potentials; there is enough energy in the sunlight incident on the surface of the earth to meet the world's energy demands many times over (∼10,000:1). However, significant market penetration requires photovoltaics to be cost competitive with fossil fuels, even when unsubsidized. Currently, balance of system costs, rather than module costs, represent the majority of the total installed cost. Thus, increasing module efficiency is attractive as high efficiency cells can reduce installation size and therefore cost. Tandem photovoltaic architectures can provide a transformative boost in module efficiency over the single junction alternative due to reduced thermalization losses. Silicon photovoltaics is a well established (>90% market share), high efficiency, low cost technology that provides a crystalline template to grow top cells upon. However, the top cell material must satisfy strict requirements, including high efficiency and long reliability, or its presence will simply reduce the performance of the silicon bottom cell. The primary top cell materials considered to date include III-V materials, but the cost of these materials and their sensitivity to defects have proven challenging. In this work, ZnSiP 2 emerges as a wide band gap absorber that has the potential to meet the requirements needed for a top cell in tandem silicon-based photovoltaics. † Electronic Supplementary Information (ESI) available:

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“…27 Soon after, the Si/ ZnSiP 2 alloy on Si substrates was grown by the vapor−liquid− solid (VLS) growth technique. 30 Very recently, the amorphous nanoscale thin films of ZnSiP 2 −Si alloys with a tunable Si content were grown on Si substrates with a carbon-free chemical vapor deposition method by Martinez et al, and the amorphous structure will crystallize by postgrowth annealing at 850 °C. 28 Despite the widely tunable Si content in the amorphous films, tuning the stoichiometry to reach nearstoichiometric ZnSiP 2 is likely to be challenging using this method.…”

Section: Introductionmentioning

confidence: 99%

“…However, unlike GaP or Cu 2 ZnSnS 4 single crystal films which have been grown on a Si substrate by various vapor growth methods including molecular beam epitaxy (MBE), chemical vapor deposition, pulsed laser deposition, and sputtering, there are few reports about the epitaxial growth of ZnSiP 2 film on Si. − In the 1970s, Si layers were deposited epitaxially on natural facets of solution-grown ZnSiP 2 crystals by hydrogen reduction of SiHCI 3 and the orientation relationships of ZnSiP 2 (112)/Si(111) and ZnSiP 2 (101)/Si(201) were determined . Soon after, the Si/ZnSiP 2 alloy on Si substrates was grown by the vapor–liquid–solid (VLS) growth technique . Very recently, the amorphous nanoscale thin films of ZnSiP 2 –Si alloys with a tunable Si content were grown on Si substrates with a carbon-free chemical vapor deposition method by Martinez et al, and the amorphous structure will crystallize by postgrowth annealing at 850 °C .…”

Section: Introductionmentioning

confidence: 99%

Characterization of ZnSiP₂ Films Grown on Si Substrate by Liquid Phase Epitaxy: Morphology, Composition, and Interface Microstructure

Zhang

Cheng

et al. 2019

Crystal Growth & Design

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The exploration and growth of novel cost-effective top cell materials is one of the great hot topics for the development of Si-based tandem solar cells. ZnSiP2 was thought to be a promising candidate of the top cell material for the Si tandem solar cell. In this work, ZnSiP2 single crystal film with the stoichiometric ratio was successfully grown on a Si substrate by the liquid phase epitaxy method for the first time. The surface morphology, thickness, composition, and the orientation of the film were characterized by SEM, EDS, EPMA, and the high-resolution XRD. The results show that a continuous epitaxial ZnSiP2 film with the thickness of 3 μm was grown on the Si substrate. In addition to this continuous film, many island single crystals were also observed on the surface of the film. The high-resolution XRD φ scan results indicated that the film as well as these isolated islands crystallized with the same orientation, c-orientation with respect to the (100) Si substrate, without any misoriented domains. The microstructure of the ZnSiP2/Si interface characterized by the high-resolution transmission electron microscopy image, as well as the selected area electron diffraction patterns of the ZnSiP2 thin films and Si substrates, also confirmed the epitaxial growth of ZnSiP2 on the Si substrate. The electrical conductivity σ, Hall mobility μH, and carrier concentrations n of the ZnSiP2 film were 1.38 × 10–5 Ω–1 cm–1, 94.5 cm–2 V–1 s–1, and 9.11 × 109 cm–3, respectively. Our work paves the way for the development of ZnSiP2 silicon-based tandem solar cell devices.

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Epitaxial growth of solid solutions of ZnSiP2 in Si

Cited by 17 publications

References 6 publications

Silicon Refining by Solidification from Liquid Si–Zn Alloy and Floating Zone Method

Silicon Refining by Solidification from Liquid Si–Zn Alloy and Floating Zone Method

Solar energy conversion properties and defect physics of ZnSiP₂

Characterization of ZnSiP₂ Films Grown on Si Substrate by Liquid Phase Epitaxy: Morphology, Composition, and Interface Microstructure

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Epitaxial growth of solid solutions of ZnSiP2 in Si

Cited by 17 publications

References 6 publications

Silicon Refining by Solidification from Liquid Si–Zn Alloy and Floating Zone Method

Silicon Refining by Solidification from Liquid Si–Zn Alloy and Floating Zone Method

Solar energy conversion properties and defect physics of ZnSiP2

Characterization of ZnSiP2 Films Grown on Si Substrate by Liquid Phase Epitaxy: Morphology, Composition, and Interface Microstructure

Contact Info

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Solar energy conversion properties and defect physics of ZnSiP₂

Characterization of ZnSiP₂ Films Grown on Si Substrate by Liquid Phase Epitaxy: Morphology, Composition, and Interface Microstructure