2011
DOI: 10.1111/j.1551-2916.2011.04406.x
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Epitaxial Growth of ZnO Films on ZnO-Buffered Al2O3 (0001) in Water at 95°C

Abstract: A very low‐temperature (95°C) aqueous solution route has applied to growing epitaxial ZnO films on Al2O3 (0001). A 500‐nm‐thick ZnO film was beforehand deposited on Al2O3 (0001) by sputtering as a buffer layer to enhance the homoepitaxial growth of ZnO in the aqueous solution. At an early stage of growth, hexagon‐shaped ZnO microcrystals grow. At later stages of growth, the hexagon microcrystals coalesce, finally producing continuous epitaxial films of ZnO, which has been confirmed by high‐resolution X‐ray dif… Show more

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Cited by 8 publications
(1 citation statement)
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“…[5][6][7][8] Besides these vapor phase techniques, chemical bath deposition (CBD) is an attractive technique for obtaining TCO films because of the advantage of large-area film growth with low cost at low temperatures. [9][10][11][12][13] However, ZnO films grown by CBD have high resistivity and low carrier concentration for lack of doping methods. Group III elements such as Al and Ga are the most prevalent donors in ZnO, but it is difficult to handle Al and Ga compounds in aqueous solutions.…”
Section: Introductionmentioning
confidence: 99%
“…[5][6][7][8] Besides these vapor phase techniques, chemical bath deposition (CBD) is an attractive technique for obtaining TCO films because of the advantage of large-area film growth with low cost at low temperatures. [9][10][11][12][13] However, ZnO films grown by CBD have high resistivity and low carrier concentration for lack of doping methods. Group III elements such as Al and Ga are the most prevalent donors in ZnO, but it is difficult to handle Al and Ga compounds in aqueous solutions.…”
Section: Introductionmentioning
confidence: 99%