Epitaxial inorganic metal-halide perovskite films with controlled surface terminations

Rieger, Janek; Kißlinger, Tilman; Raabgrund, Andreas; Hauner, Jonas; Niesner, Daniel; Schneider, M. Alexander; Fauster, Thomas

doi:10.1103/physrevmaterials.7.035403

Cited by 4 publications

(2 citation statements)

References 55 publications

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“…23) The mp of the CsSnBr 3 thin film may have shifted away from that of the bulk crystal due to the presence of the substrate. 40) Several diffraction peaks at 15.3°(001), 21.6°( 110), 26.6°(111), 30.8°(002), 34.6°(210), 38.0°(211), 44.2°( 220), and 49.7°(310) observed in the 2θ/θ patterns agreed well with the simulated powder XRD pattern of CsSnBr 3 (PDF #01-070-1645) and no impurity peak was found [Fig. 3].…”

Section: Substrate Temperature Dependence Of Cssnbr 3 Thin Filmsmentioning

confidence: 99%

Substrate temperature dependence of vapor phase deposition of all-inorganic lead-free CsSnBr₃ perovskite thin films

Liu,

Jung,

Sotome

et al. 2024

Jpn. J. Appl. Phys.

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We report the effect of substrate temperature on the vapor phase deposition of all-inorganic lead-free tin halide perovskite CsSnBr3 thin films by co-evaporation of CsBr and SnBr2. The amount of SnBr2 supplied had little effect on the thin film when the substrate temperature exceeded the SnBr2 cell temperature (180°C) indicating that the three-temperature growth was realized. The polycrystalline CsSnBr3 thin films obtained by three-temperature growth showed micrometer-scale grains and no by-products. The average grain size increased for higher substrate temperatures following the Arrhenius law with an activation energy of 6.6 kJ/mol.

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Section: Substrate Temperature Dependence Of Cssnbr 3 Thin Filmsmentioning

confidence: 99%

Substrate temperature dependence of vapor phase deposition of all-inorganic lead-free CsSnBr₃ perovskite thin films

Liu,

Jung,

Sotome

et al. 2024

Jpn. J. Appl. Phys.

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“…Epitaxial films under epitaxial strain can serve as this excellent model system to systematically test the impact of strain on perovskite systems. Epitaxially grown halide perovskite films have received attention recently, [109] but research is still lacking compared to perovskite oxide due to technological limitations. Thus, the development of material methodologies for epitaxial thin film of halide perovskites under well-defined strain can provide a great opportunity to advance our knowledge.…”

Section: Summary and Perspectivesmentioning

confidence: 99%

Strain Engineering in Perovskites: Mutual Insight on Oxides and Halides

Choi,

Lee,

Jang

2023

Advanced Materials

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Perovskite materials have garnered significant attention over the past decades due to their applications, not only in electronic materials, such as dielectrics, piezoelectrics, ferroelectrics, and superconductors but also in optoelectronic devices like solar cells and light emitting diodes. This interest arises from their versatile combinations and physiochemical tunability. While strain engineering is a recognized powerful tool for tailoring material properties, its collaborative impact on both oxides and halides remains understudied. Herein, strain engineering in perovskites for energy conversion devices, providing mutual insight into both oxides and halides is discussed. The various experimental methods are presented for applying strain by using thermal mismatch, lattice mismatch, defects, doping, light illumination, and flexible substrates. In addition, the main factors that are influenced by strain, categorized as structure (e.g., symmetry breaking, octahedral distortion), bandgap, chemical reactivity, and defect formation energy are described. After that, recent progress in strain engineering for perovskite oxides and halides for energy conversion devices is introduced. Promising methods for enhancing the performance of energy conversion devices using perovskites through strain engineering are suggested.

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Tin Halide Perovskite Epitaxial Films on Gold Surfaces: Atomic Structure and Stability

Abbasli,

Hieulle,

Schrage

et al. 2024

Adv Funct Materials

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Tin‐based halide perovskite solar cells can be efficient and environmentally friendly substitutions to lead‐based halide perovskite solar cells, but they have a drawback due to oxidation from Sn2+ to Sn4+. Using vacuum deposition, epitaxially aligned CsSnBr3 ultrathin films are prepared on Au(111) and Au(100) and characterized with scanning tunneling microscopy (STM), low‐energy electron diffraction (LEED), and X‐ray photoelectron spectroscopy (XPS). By co‐evaporation of the precursor molecules CsBr and SnBr2, few monolayers of perovskite are obtained. On Au(111), CsSnBr3 grows in three differently oriented domains due to the hexagonal symmetry of the substrate. On Au(100), which has square symmetry, identical to CsSnBr3, but with about half the lattice constant of the perovskite, a (2×2) superstructure is observed. The perovskite is terminated with the (001) facet showing a square surface structure in agreement with density functional theory (DFT) calculations. Chemical analysis is performed in ultra‐high vacuum (UHV) conditions and no indication of a tin oxidation state higher than Sn2+ is found in the films. However, after exposure to air, rapid and severe changes in the films are observed, highlighting the importance of preparing tin perovskites in a controlled environment to maintain their stability and avoid oxidation‐related issues.

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Epitaxial inorganic metal-halide perovskite films with controlled surface terminations

Cited by 4 publications

References 55 publications

Substrate temperature dependence of vapor phase deposition of all-inorganic lead-free CsSnBr₃ perovskite thin films

Substrate temperature dependence of vapor phase deposition of all-inorganic lead-free CsSnBr₃ perovskite thin films

Strain Engineering in Perovskites: Mutual Insight on Oxides and Halides

Tin Halide Perovskite Epitaxial Films on Gold Surfaces: Atomic Structure and Stability

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Epitaxial inorganic metal-halide perovskite films with controlled surface terminations

Cited by 4 publications

References 55 publications

Substrate temperature dependence of vapor phase deposition of all-inorganic lead-free CsSnBr3 perovskite thin films

Substrate temperature dependence of vapor phase deposition of all-inorganic lead-free CsSnBr3 perovskite thin films

Strain Engineering in Perovskites: Mutual Insight on Oxides and Halides

Tin Halide Perovskite Epitaxial Films on Gold Surfaces: Atomic Structure and Stability

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Substrate temperature dependence of vapor phase deposition of all-inorganic lead-free CsSnBr₃ perovskite thin films

Substrate temperature dependence of vapor phase deposition of all-inorganic lead-free CsSnBr₃ perovskite thin films