Epitaxial InP nanowire growth from Cu seed particles

Hillerich, Karla; Messing, Maria E.; Wallenberg, L. Reine; Deppert, Knut; Dick, Kimberly A.

doi:10.1016/j.jcrysgro.2010.08.016

Cited by 18 publications

(18 citation statements)

References 21 publications

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“…In recent years, vertically aligned NWs to the substrate have been obtained using Pd for InAs NWs 24, 25 and Ag for InSb NWs 26. We have earlier reported on Cu seeded InP nanowires 27, 28. Here, we extend our investigations on that materials system and report on Cu seeded InP–InAs heterostructures.…”

Section: Introductionsupporting

confidence: 54%

“…In our earlier publications 27, 28 we chose the III/V material InP to demonstrate that nanowire growth from Cu seed particles differs significantly from nanowire growth from Au particles. We observed a lower and narrower temperature regime 27, and two regimes of V/III ratios 28. At higher V/III ratios, NWs grow from a solid Cu 2 In particle; at lower V/III ratios NWs grow simultaneously from solid Cu 2 In particles (type I) and In‐rich liquid particles (type II).…”

Section: Introductionmentioning

confidence: 99%

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Cu particle seeded InP–InAs axial nanowire heterostructures

Hillerich

Ghidini

Dick

et al. 2013

Physica Rapid Research Ltrs

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We demonstrate the epitaxial growth of alternating InP–InAs nanowire heterostructures using Cu seed particles in MOVPE. We observe extraordinary early stages in the formation of InAs segments, e.g. three‐dimensional nucleation instead of step‐flow growth. Furthermore, InAs segments of thin nanowires exhibit extended 4H crystal structure. Color coded XEDS elemental map of a typical InP–InAs nanowire heterostructure seeded by a Cu particle. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionsupporting

confidence: 54%

Section: Introductionmentioning

confidence: 99%

Cu particle seeded InP–InAs axial nanowire heterostructures

Hillerich

Ghidini

Dick

et al. 2013

Physica Rapid Research Ltrs

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“…Accordingly, good matching of lattice constants of metallic nanoparticles and metallic disc surfaces was implied to provide strong metal–metal bonding. In epitaxial growth mechanism, crystalline surface of substrate acts as seed crystal on material in contact with the crystalline surface, and consequently the material is crystallized epitaxially on the crystalline surface . The seed crystal with a lattice constant close to that for the material is suitable to promoting crystal growth following the crystallization, because a large mismatch of lattice constant between the seed crystal and the material provides stress between them due to difference of crystal growth rate, which results in generation of cracks in the material.…”

Section: Resultsmentioning

confidence: 99%

Microstructure of metallic copper nanoparticles/metallic disc interface in metal–metal bonding using them

Kobayashi

Shirochi

Maeda

et al. 2013

Surface & Interface Analysis

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This paper describes a metal-metal bonding technique using metallic Cu nanoparticles prepared in aqueous solution. A colloid solution of metallic Cu particles with a size of 54 AE 15 nm was prepared by reducing Cu 2+ (0.01 M (CH 3 COO) 2 Cu) with hydrazine (0.6 M) in the presence of stabilizers (5 Â 10 À4 M citric acid and 5 Â 10 À3 M cetyltrimethylammonium bromide) in water at room temperature in air. Discs made of metallic materials (Cu, Ni/Cu, or Ag/Ni/Cu) were successfully bonded under annealing at 400 C and pressurizing at 1.2 MPa for 5 min in H 2 gas with help of the metallic Cu particle powder. Shear strength required for separating the bonded discs was 27.9 AE 3.9 for Cu discs, 28.1 AE 4.1 for Ni/Cu discs, and 13.8 AE 2.6 MPa for Ag/Ni/Cu discs. Epitaxial crystal growth promotes on the discs with a good matching for the lattice constants between metallic nanoparticles and metallic disc surfaces, which leads to strong bonding.

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“…In the quest to achieve VLS in a non-self-catalyzed manner, Hallberg et al and Sun et al have performed pioneering work on alternative metals for the growth of III-arsenide and III-phosphide nanowires. For example, Pd-and Sn-catalyzed GaAs [128,129] and Cu-catalyzed InP [130,131] nanowire growth has recently been demonstrated. This area of research is still in its relatively early stages; high quality nanowires are still challenging to grow with catalyst metals other than Au.…”

Section: Catalyst Selectionmentioning

confidence: 99%

Semiconductor nanowires: to grow or not to grow?

McIntyre

Morral

2020

Materials Today Nano

125

122

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Semiconductor nanowires have demonstrated exciting properties for nanophotonics, sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic devices. Fabrication schemes for nanowires are varied, but they fall into three general categories: (1) top-down lithographic patterning and etching of bulk crystals and epitaxial films; (2) bottom-up, locally catalyzed crystal growth of nanowires; and (3) hybrid methods that combine aspects of categories (1) and (2). In this article, we examine the relative merits and unique attributes of each of these paradigms for nanowire synthesis. We review literature relevant to nanowire fabrication methods, faceting and dimensional control (diameter and length), positioning and alignment, doping, bulk and surface defects, and formation of unique nanowire heterostructures and metastable phases. Finally, we describe the factors governing selection among top-down, bottom-up, and hybrid methods to fabricate nanowire structures depending on their desired structural features and applications.

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Epitaxial InP nanowire growth from Cu seed particles

Cited by 18 publications

References 21 publications

Cu particle seeded InP–InAs axial nanowire heterostructures

Cu particle seeded InP–InAs axial nanowire heterostructures

Microstructure of metallic copper nanoparticles/metallic disc interface in metal–metal bonding using them

Semiconductor nanowires: to grow or not to grow?

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