Epitaxial integration of dilute magnetic semiconductor Sr3SnO with Si (001)

Lee, Y. F.; Wu, Fan; Kumar, R. Krishna; Hunte, Frank; Schwartz, J.; Narayan, J.

doi:10.1063/1.4820770

Cited by 42 publications

(46 citation statements)

References 18 publications

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“…It is also worth noting that experiments on this series of materials are now developing. We have highly refined crystal characterization [28], thin film fabrication [29,30], a thermal measurement [31], and even a report of superconductivity [32].In this paper, we show that the competition between SOC and the band overlap leads to an interesting evolution of the band structure, taking Ba 3 SnO as a prototypical example. In the previous work on the analysis of the antiperovskite family [24], we regarded that the SOC arXiv:1705.08934v1 [cond-mat.mes-hall]…”

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Evolution of band topology by competing band overlap and spin-orbit coupling: Twin Dirac cones in Ba3SnO as a prototype

Kariyado

Ogata

2017

Phys. Rev. Materials

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We theoretically demonstrate how competition between band inversion and spin-orbit coupling (SOC) results in nontrivial evolution of band topology, taking antiperovskite Ba3SnO as a prototype material. A key observation is that when the band inversion dominates over SOC, there appear "twin" Dirac cones in the band structure. Due to the twin Dirac cones, the band shows highly peculiar structure in which the upper cone of one of the twin continuously transforms to the lower cone of the other. Interestingly, the relative size of the band inversion and SOC is controlled in this series of antiperovskite A3EO by substitution of A (Ca, Sr, Ba) and/or E (Sn, Pb) atoms. Analysis of an effective model shows that the emergence of twin Dirac cones is general, which makes our argument a promising starting point for finding a singular band structure induced by the competing band inversion and SOC.Singularities in band structures give rise to singular and attracting responses of materials [1][2][3][4][5]. Therefore, significant amount of efforts have been paid on finding what kinds of singularities are possible in principle, and on proposing materials to realize the singularities, both in theory and experiments [6][7][8]. The "standard" singularity is Dirac/Weyl cone [9-13], which is characterized by a linear, or conical dispersion around an isolated gapclosing point in the Brillouin zone. Already a number of materials are confirmed to possess Dirac/Weyl cones, ranging from graphene [14] (two-dimensional) to Cd 3 As 2 [15], Na 3 Bi [16], and TaAs [17] (three-dimensional), and so on. However, the linear dispersion around the isolated gap-closing point is not the only possible band singularity. The gap-closing point can form a line (typically a loop) in the Brillouin zone rather than an isolated point [18][19][20]. Also, a dispersion around a gap-closing point can be quadratic rather than linear [21]. Very recently, singularities involving three bands are also discussed [22,23].Quite often, the three ingredients, i.e., band inversion, spin-orbit coupling (SOC), and symmetry, play key roles in generating a singular band structure. Roughly speaking, the band inversion means an overlap between two bands with different origin, typically originating from different kinds of orbitals, say s-and p-orbitals, or p-and d-orbitals. Naively, the overlapped bands repel with each other (band anticrossing). However the gap opening due to the band repulsion is sometimes prohibited by some symmetry, leading to singular gap closing points. The SOC, on the other hand, determines which kinds of the band repulsion is allowed, in other words, what kinds of gap-closing points can appear. terial Ca 3 PbO is predicted to have three-dimensional Dirac cones exactly at the Fermi energy, and importantly, all of the three ingredients, the band overlap, SOC, and the symmetry, are relevant in the formation of Dirac cones. (Strictly speaking, there is a tiny mass gap. If we make an emphasis on the gapful nature, the system is a topological crystalline insulator ...

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Evolution of band topology by competing band overlap and spin-orbit coupling: Twin Dirac cones in Ba3SnO as a prototype

Kariyado

Ogata

2017

Phys. Rev. Materials

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“…Researchers at North Carolina State University have created a new compound that can be integrated into silicon chips and is a dilute magnetic semiconductor [1,2], meaning that it could be used to make "spintronic" devices, which rely on magnetic force to operate, rather than electrical currents. The researchers synthesized the new compound, strontium tin oxide (Sr 3 SnO), as an epitaxial thin film on a silicon chip.…”

Section: Introductionmentioning

confidence: 99%

“…F. Lee et al [9][10][11] successfully managed to grow epitaxial Sr3SnO (SSO) one of the predicted TI film on Si based substrate by means of pulsed leaser deposition (PLD). The new inverse-perovskites (SSO) turned to exhibit a ferromagnetic state at room temperature, which will pave the way toward integrating the spin degree of freedom in silicon based electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Newly discovered Topological Insulator Sr3SnO for Spintronics, Optical and Electronic properties

Amrane

Moh'd

Lucman

et al. 2018

JAP

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A theoretical study of the electronic and optical properties of dilute magnetic semiconductor Sr 3 SnO is presented, using the full potential linearized augmented plane wave method. The Perdew Burke Ernzerhof (GGA08) (generalized gradient approximation) is used for the total energy calculations, while the Modified Becke-Johnson (MBJ) is used for electronic structure calculations since this functional was designed to reproduce as well as possible the exact exchange correlation potential rather than the total energy, and as a result gives significantly improved results such as band gap and electronic structure. In this study, we have investigated the optical properties by means of first-principles density-functional total-energy calculation using the all-electron full potential linear augmented plane-wave method (FPLAPW).

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“…Recent study on Sr 3 SnO thin film grown by pulsed-laser deposition showed a semiconducting behavior with a magnetic ground state. 24 However, the growth of Sr 3 SnO anti-perovskite films may need further investigation because x-ray diffraction (XRD) did not show Bragg reflections from (00l) plane with odd l expected for anti-perovskite, and XRD peaks assigned to Sr 3 SnO were not distinguishable from those of yttria-doped zirconia (YSZ) used as a buffer layer.…”

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Molecular beam epitaxy of three-dimensional Dirac material Sr3PbO

2016

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A series of anti-perovskites including Sr3PbO are recently predicted to be a three-dimensional Dirac material with a small mass gap, which may be a topological crystalline insulator. Here, we report the epitaxial growth of Sr3PbO thin films on LaAlO3 using molecular beam epitaxy. X-ray diffraction indicates (001) growth of Sr3PbO, where [110] of Sr3PbO matches [100] of LaAlO3. Measurements of the Sr3PbO films with parylene/Al capping layers reveal a metallic conduction with p-type carrier density of ∼1020 cm−3. The successful growth of high quality Sr3PbO film is an important step for the exploration of its unique topological properties.

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Epitaxial integration of dilute magnetic semiconductor Sr3SnO with Si (001)

Cited by 42 publications

References 18 publications

Evolution of band topology by competing band overlap and spin-orbit coupling: Twin Dirac cones in Ba3SnO as a prototype

Evolution of band topology by competing band overlap and spin-orbit coupling: Twin Dirac cones in Ba3SnO as a prototype

Newly discovered Topological Insulator Sr3SnO for Spintronics, Optical and Electronic properties

Molecular beam epitaxy of three-dimensional Dirac material Sr3PbO

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