Epitaxial Integration of Ferroelectric BaTiO3 with Semiconductor Si: From a Structure- Property Correlation Point of View

Polarization and Dielectric Study of Methylammonium Lead Iodide Thin Film to Reveal its Nonferroelectric Nature under Solar Cell Operating Conditions

“…To find the possible presence of ferroelectric behavior, the temperature dependence of dielectric constant and loss tangent at several selected frequencies are plotted in Figure a. It is known that a peak in dielectric constant and loss tangent is a characteristic of a ferroelectric material when crossing its ferroelectric–​paraelectric phase transition ( T c ). ,, However, no such peaks, either sharp or broad, were found in the temperature range of 10–70 °C, which covers the tetragonal–​cubic phase transition temperature range. This further supports the lack of a ferroelectric feature observed in MAPbI 3 thin films in the polarization studies.…”