Epitaxial Lateral Overgrowth of GaN

Beaumont, B.; Vennéguès, P.; Gibart, P.

doi:10.1002/1521-3951(200109)227:1<1::aid-pssb1>3.0.co;2-q

Cited by 191 publications

(98 citation statements)

References 153 publications

(190 reference statements)

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“…Since EDX detects mostly carbon in these rods, the similarity to carbon nanotubes growth on metal covered substrates cannot be neglected, as discussed below. XRD under grazing incidence geometry was performed on these balloon structures before and after annealing under NH 3 . An evolution of the XRD diagram in the 30-44 region is presented in Fig.…”

Section: Inset)mentioning

confidence: 99%

See 1 more Smart Citation

MOVPE growth of Ga 3D structures for fabrication of GaN materials

Sacilotti¹,

Imhoff²,

Bourgeois³

et al. 2004

Journal of Crystal Growth

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Section: Inset)mentioning

confidence: 99%

“…Great effort has been devoted to develop the (Ga, Al, In)N family, to improve the crystal quality and, consequently, improve the devices' performances [3]. Many of these improvements are closely related to the substrate and the growth/ regrowth conditions [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

MOVPE growth of Ga 3D structures for fabrication of GaN materials

Sacilotti¹,

Imhoff²,

Bourgeois³

et al. 2004

Journal of Crystal Growth

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“…In III-N technology, SAG has been employed mostly in epitaxial lateral overgrowth (ELOG) methods which were developed to reduce threading dislocations in heteroepitaxial growth [55][56][57]. In contrast with ion implantation, the extensively characterized [58][59][60][61][62] defect-free GaN layers grown by lateral epitaxial over-growth can provide a more beneficial solution to realize LHJ structures [63].…”

Section: Selective Area Growth As a Methods To Realize A Lateral Pn-jumentioning

confidence: 99%

Diffusion-Driven Charge Transport in Light Emitting Devices

Kim¹,

Kivisaari²,

Oksanen³

et al. 2017

Preprint

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Almost all modern inorganic light-emitting diode (LED) designs are based on double heterojunctions (DHJs) whose structure and current injection principle have remained essentially unchanged for decades. Although highly efficient devices based on the DHJ design have been developed and commercialized for energy-efficient general lighting, the conventional DHJ design requires burying the active region (AR) inside a pn-junction. This has hindered the development of emitters utilizing nanostructured ARs located close to device surfaces such as nanowires or surface quantum wells. Modern DHJ III-N LEDs also exhibit resistive losses which arise from the DHJ device geometry. The recently introduced diffusion-driven charge transport (DDCT) emitter design offers a novel way to transport charge carriers to unconventionally placed ARs. In a DDCT device, the AR is located apart from the pn-junction and the charge carriers are injected into the AR by bipolar diffusion. This device design allows the integration of surface ARs to semiconductor LEDs and offers a promising method to reduce resistive losses in high power devices. In this work, we present a review of the recent progress in gallium nitride (GaN) based DDCT devices, and an outlook of potential DDCT has for opto-and microelectronics.

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“…On the other hand Narayanan et al [72] in their studies stated that TDs come from the defects at the sapphire/GaN boundary. Different methods are used to lower the TD density, such as epitaxial lateral overgrowth, pendeo epitaxy [73], applying high-temperature AlN buffer layers [67] or transitional metal nitrides interlayers [74]. These techniques allowed to lower the dislocation density by a few orders of magnitude to ~10 6 -10 7 cm -2 .…”

Section: Threading Dislocationsmentioning

confidence: 99%

Doping effects on the structural and optical properties of GaN

Khromov¹

2013

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Today there is a strong drive towards higher efficiency light emitters and devices for power electronics based on GaN and its ternary compounds. Device performance can be improved in several ways on the material level. Development of bulk GaN to substitute sapphire and SiC as substrate materials can allow lower defect density epitaxial GaN layers to be grown. Using nonpolar homoepitaxial layers alleviates the problem of polarization fields present in polar GaN epilayers. This thesis advances the field by attacking outstanding problems related to doping and its influence on structural and optical properties of GaN. Optical and structural investigations were performed on bulk GaN grown by halide vapor phase epitaxy (HVPE) and on polar and nonpolar epitaxial GaN grown by metal organic chemical vapor deposition (MOCVD), doped with different impurities: Mg, Si, O or C. Optical characterization was done using photoluminescence (PL), time-resolved photoluminescence (TRPL), and cathodoluminescence (CL) in-situ scanning electron microscope, whereas structural properties were studied by means of transmission electron microscopy (TEM) and atom probe tomography (APT Simultaneous doping by Si and O was studied for HVPE grown bulk GaN. Doping with O concentration from 10 17 cm -3 leads to a decrease in the Si concentration to less than 10 16 cm -3 . Si incorporation is believed to be suppressed by the competing Ga-vacancy-O incorporation process. Bandgap narrowing by 6 meV due to high doping was observed. Donor bound exciton (DBE) lifetime was obtained from TPRL experimental data and it is found to decrease with increasing doping. In non-polar m-plane homoepitaxial GaN Si doping influences the SF-related luminescence. At moderate Si concentrations excitons are bound to ii the impurity atoms or impurity-SF complex. Proximity of impurity atoms changes the potential for SF creating localization for charge carriers resulting in SF-related emission. At dopant concentrations higher than the Mott limit screening destroys the carrier interaction and, thus, the exciton localization at impurity-SF complex.Finally, C-doped HVPE grown bulk GaN layers were studied by TEM, CL, and TRPL. Enhanced yellow line (YL) luminescence was observed with increasing C doping. Stability of YL in a wide temperature range (5-300 K) confirms that YL is due to a deep defect, likely C N -O N complex. Low-temperature CL mapping reveals a pit-like structure with different luminescence properties in different areas. DBE emission dominates in CL spectra within the pits while in pit-free areas, in contrast, two ABE lines typical for Mg-doped GaN are observed.iii POPULÄRVETENSKAPLIG SAMMANFATTNINGUngefär 20% av all elektricitet som produceras i världen används till belysning. Det betyder att vi kommer att spara mycket energi om vi ersätter nuvarande lågeffektiva glödlampor med starka vita lysdioder (LED), dessutom kommer utsläpp av koldioxid på planeten att minskas. Detta förklarar orsaken till den enorma utvecklingen av LED-industri som har skett under de...

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Epitaxial Lateral Overgrowth of GaN

Cited by 191 publications

References 153 publications

MOVPE growth of Ga 3D structures for fabrication of GaN materials

MOVPE growth of Ga 3D structures for fabrication of GaN materials

Diffusion-Driven Charge Transport in Light Emitting Devices

Doping effects on the structural and optical properties of GaN

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