Epitaxial Lateral Overgrowth of Nitrogen-Polar (0001̅) GaN by Metalorganic Chemical Vapor Deposition

Song, Jie; Gao, Yuan; Xiong, Kanglin; Leung, Benjamin; Han, Jung

doi:10.1021/cg500229r

Cited by 36 publications

(46 citation statements)

References 29 publications

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“…In this case, N polarity is kinetically unfavorable on the Al contained surface. 14 39 Therefore, we could conclude that the 2 nd GaN has mixed polarity with Ga-and N-polar GaN, where the N polarity was usually enhanced around grain boundaries.…”

Section: Polarity Study From Chemical Etchingmentioning

confidence: 91%

Evolutionary growth of microscale single crystalline GaN on an amorphous layer by the combination of MBE and MOCVD

et al. 2015

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To integrate multiple functional devices on a chip, advances in epitaxial growth on heterosubstances are required. As one approach to achieve an epitaxial layer on an amorphous substrate, we developed a method of combined epitaxial growth using molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). This two-stage combined growth can be used to grow a binary gallium nitride (GaN) on any thermally durable substances. The first MBE growth step provided us effective nucleation with uniform morphology. Meanwhile, the second MOCVD growth enabled improved crystalline quality. Detailed analysis at grain-to-grain and layer-to-layer interfaces was studied with high-resolution transmission electron microscopy (TEM) characterization. This study gives a deep understanding of the growth behavior, thereby supporting the demonstration of perfect single crystalline GaN, enabling the realization of optoelectronic GaN-based devices on amorphous layer.

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Section: Polarity Study From Chemical Etchingmentioning

confidence: 91%

Evolutionary growth of microscale single crystalline GaN on an amorphous layer by the combination of MBE and MOCVD

et al. 2015

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“…1 They have found practical applications in a wide variety of fields including solar cells, 2 integrated circuits, 3 solid-state lighting, 4 and sensors. 5 During the past decades, various routes, such as magnetic sputtering, 6 atomic layer deposition (ALD), 7 molecular beam epitaxy (MBE), 8 and metal organic chemical vapor deposition (MOCVD), 9 have been developed to synthesize semiconductor thin films. Among these strategies, of particular importance are the ones that are able to grow single-crystalline or polytypic thin films epitaxially.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of wafer-scale two-dimensional polytypic ZnS thin films on ZnO substrates

Wang

Xiong

et al. 2017

CrystEngComm

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In this paper, we report the first successful epitaxial synthesis of flat wafer-scale two-dimensional ZnS thin films on single- file at the interfaces were studied in detail. After a simple etching treatment, exfoliated large-area free-standing ZnS thin films were achieved for the first time. The present product is expected to become valuable to the strategy of growing large-area thin films or heterostructures with a large lattice mismatch.

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“…This is similar to the early development of GaN on sapphire, where some researchers observed inversion domains for growth on planar sapphire substrates. Polarity switching and non‐uniform polarity also been recently observed in N‐polar GaN epitaxial lateral overgrowth experiments .…”

Section: Resultsmentioning

confidence: 57%

Complete orientational access for semipolar GaN devices on sapphire

Leung

Wang

Kuo

et al. 2015

Physica Status Solidi (b)

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Semipolar (202¯1) GaN light‐emitting diodes and (202¯1¯) GaN films are demonstrated on sapphire substrates. The processes developed here embody all the required steps in order to produce planar semipolar devices on sapphire substrates with complete control of the crystallographic orientation. Theoretical and experimentally observed aspects of semipolar materials and devices on bulk substrates are reviewed, including device performance and orientation‐dependent material properties. This summary motivates the use of particular semipolar orientations having Miller indices (hkil), with l < 0, such as (202¯1¯) and (303¯1¯). These orientations have not, as of yet, been shown to be obtained using sapphire substrates. With the appropriate nitridation and buffer layer growth condition on stripe‐patterned sapphire, high quality single crystal (202¯1¯) GaN films have been achieved. Demonstration of surface planarization, device layer regrowth, and LED operation, performed here on semipolar (202¯1¯) GaN, detail the processes to enable planar semipolar‐based devices on sapphire with these unique orientations. With these advances, the required foundation has been put into place to allow access to the potentially highest performance semipolar planes while using economically feasible, large area sapphire substrates. Processes to produce (202¯1) LED devices (top left) on GaN films grown on full 2″ sapphire substrates (bottom left) are described in this paper. The achievement of (202¯1¯) GaN paves the way toward achieving full orientational access on sapphire substrates (right).

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Epitaxial Lateral Overgrowth of Nitrogen-Polar (0001̅) GaN by Metalorganic Chemical Vapor Deposition

Cited by 36 publications

References 29 publications

Evolutionary growth of microscale single crystalline GaN on an amorphous layer by the combination of MBE and MOCVD

Evolutionary growth of microscale single crystalline GaN on an amorphous layer by the combination of MBE and MOCVD

Epitaxial growth of wafer-scale two-dimensional polytypic ZnS thin films on ZnO substrates

Complete orientational access for semipolar GaN devices on sapphire

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