Epitaxial Layer Parameters Estimation Approach of Silicon Carbide Schottky Diodes

Abstract

International audienceSilicon-carbide Schottky diode is seen as one of the newest devices deployed in sensor application. Temperature sensors using these highly developed devices have been introduced. The linearity of the output signal versus temperature of the silicon-carbide Schottky diode is demonstrated. From a modeling point of view, accurate simulations are necessary for checking sensor behavior. These simulations tend to rely on component models and associated confidential epitaxial parameters. Therefore, this paper sets out to extract accurate parameters of the silicon-carbide Schottky diode. In pursuit of this end, a systematic approach is developed and a physically based model is introduced. This model is run for many devices, giving directly epitaxial layer parameters. A contrastive study between experimental and simulation is undertaken, resulting in good agreement

Electrical characterization of a-Si:H(n)/c-Si(p) structure

“…In order to betray the presence of BH inhomogeneity, the temperature dependent ideality factor plot can be examined [13][14][15][16][17][18][19][20]29,[31][32][33][34][35][36]. The ideality factor values are calculated from the slope of forward I-V data in Fig.…”

“…The importance of such studies is to understand the effect of native or deposited insulator layers in MIS type SBDs [10][11][12][13][14][15][16][17][18][19][20]. The formation of device structure strongly effects to the performance and stability of these devices [9].…”

“…In spite of these numerous studies, more work is needed to understand the fundamental characteristics of a-Si:H/c-Si heterojunction diode structures and the key factors required to improve their electronic quality. On the other hand, the interface properties between n-and p-type materials are crucial [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20].…”