Epitaxial lift-off method for GaAs solar cells with high Al content AlGaAs window layer

Paulauskas, Tadas; Strazdienė, Viktorija; Šebeka, Benjaminas; Maneikis, Andrius; Kamarauskas, Mindaugas; Geižutis, Andrejus; Skapas, Martynas; Suchodolskis, A.; Drazdys, Mantas; Pačebutas, V.; Krotkus, A.

doi:10.1088/1361-6641/acb3f0

Cited by 5 publications

(4 citation statements)

References 20 publications

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“…After growth, a back contact of AuGe/Ni/Au is deposited, followed by electrochemical copper deposition and attachment of the structure to a Kapton polyimide. The substrate is then removed by etching [ 10 ]. Layers 2–4 (see Fig.…”

Section: Resultsmentioning

confidence: 99%

“…A thin-film triple-junction solar cell was obtained by GaAs substrate etching. The etching procedure, including back surface metallization with metal contacts, electrochemical deposition of a 20-μm-thick Cu, and securing the cell to a polyimide sheet, is described elsewhere in [ 10 ].…”

Section: Experimental Methodsmentioning

confidence: 99%

“…Several versions of such 3 J solar cells have been proposed, with the best achieving 39.5% efficiency under one-sun AM1.5G and 34.2% under AM0 space spectra [ 8 ]. The design of 3 J devices that incorporate bottom InGaAs subcell relies on a several micrometres thick buffer layer and an inverted metamorphic (IMM) epitaxy to accommodate an almost 2% lattice mismatch [ 5 , 9 , 10 ]. Dilute nitrogen-based alloys, such as GaInNAs and GaInNAsSb, have also shown potential for use in 3 J and 4 J devices because they allow for bandgap variation in the 0.7–1.4 eV range while maintaining the desired lattice constant [ 11 , 12 ].…”

Section: Introductionmentioning

confidence: 99%

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Performance assessment of a triple-junction solar cell with 1.0 eV GaAsBi absorber

et al. 2023

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Group III–V semiconductor multi-junction solar cells are widely used in concentrated-sun and space photovoltaic applications due to their unsurpassed power conversion efficiency and radiation hardness. To further increase the efficiency, new device architectures rely on better bandgap combinations over the mature GaInP/InGaAs/Ge technology, with Ge preferably replaced by a 1.0 eV subcell. Herein, we present a thin-film triple-junction solar cell AlGaAs/GaAs/GaAsBi with 1.0 eV dilute bismide. A compositionally step-graded InGaAs buffer layer is used to integrate high crystalline quality GaAsBi absorber. The solar cells, grown by molecular-beam epitaxy, achieve 19.1% efficiency at AM1.5G spectrum, 2.51 V open-circuit voltage, and 9.86 mA/cm2 short-circuit current density. Device analysis identifies several routes to significantly improve the performance of the GaAsBi subcell and of the overall solar cell. This study is the first to report on multi-junctions incorporating GaAsBi and is an addition to the research on the use of bismuth-containing III–V alloys in photonic device applications.

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Section: Resultsmentioning

confidence: 99%

Section: Experimental Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Performance assessment of a triple-junction solar cell with 1.0 eV GaAsBi absorber

et al. 2023

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“…Other approaches, such as wafer bonding, − ELO, − and microtransfer printing are more promising. They can reproducibly deliver large-scale GaAs films of sufficient quality on foreign substrates, e.g., for applications in high-frequency amplification and optoelectronics.…”

Section: Introductionmentioning

confidence: 99%

Improved Thermal Performance of InGaAs/GaAs Nanomembrane HEMTs Transferred onto Various Substrates by Epitaxial Lift-Off

Gucmann,

Meng,

Chvála

et al. 2024

ACS Appl. Electron. Mater.

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High-frequency wireless communication in consumer, defense, and space applications heavily relies on the use of compound semiconductor amplifiers. Typically, the X to Ka wireless bands (∼8−40 GHz) are covered by GaN and GaAs-based devices, respectively, to the desired output power. GaAs-based high-electron mobility transistors (HEMTs) provide an unprecedented ultralownoise high-frequency operation even at cryogenic temperatures, critically important for the high-fidelity amplification of weak qubit states in quantum computing. Increased output power from GaAsbased devices while maintaining low self-heating is an important but challenging objective. In this study, we used an epitaxial lift-off (ELO) technique to transfer GaAs nanomembranes onto foreign substrates (sapphire, Si, and SiC) and analyzed the thermal properties of the van der Waals-bonded GaAs films by nanosecond transient thermoreflectance (TTR). Electrothermal simulation of a GaAs HEMT was used to predict the thermal performance of the transferred devices, and a significant decrease of ∼30% in the device thermal resistance (R th ) was observed when SiC and diamond substrates were used. Our results also predict that the on-state channel temperature rise can be further decreased by ∼29 to 41% if the GaAs/substrate interface is improved by increased thermal boundary conductance. Our study finds that the ELO-transferred GaAs HEMTs onto foreign highly thermally conductive substrates can significantly improve their thermal performance and allow for higher output while keeping the on-state temperature within the safe operating margin.

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Achieving Large‐Area, Crack‐Free Epitaxial Lift‐Off of Inverted Metamorphic Multijunction Solar Cells by Ag Electrode Extension and the Counterintuitive Use of Temporary Rigid Carrier

Yu Jeco‐Espaldon,

Okada

2024

Solar RRL

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The material choices for highly efficient multijunction solar cells (MJSCs) can be expanded by stacking lattice‐mismatched III–V materials grown by the inverted metamorphic approach. However, III–V materials are expensive, necessitating low‐cost strategies such as substrate reuse by epitaxial lift‐off (ELO) to improve their technology readiness. Inverted metamorphic MJSCs (IMM‐MJSCs) are inherently fragile due to the interfacial stresses introduced by graded buffer layers between mismatched materials. While numerous studies have reported successful fabrication of crack‐free IMM‐MJSCs, comprehensive procedural details and critical considerations are often left undisclosed. Herein, a systematic method is presented for achieving large‐area, crack‐free thin‐film IMM‐MJSCs. Specifically, the efficacy of the ELO bath method combined with Ag back electrode extension and the innovative application of rigid, acid‐ and polar solvent‐resistant plastics as temporary carriers during the process is demonstrated. By addressing the challenges of mechanical fragility and developing robust ELO techniques, this work aims to enable the practical implementation of high‐efficiency IMM‐MJSCs for space and terrestrial applications.

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Epitaxial lift-off method for GaAs solar cells with high Al content AlGaAs window layer

Cited by 5 publications

References 20 publications

Performance assessment of a triple-junction solar cell with 1.0 eV GaAsBi absorber

Performance assessment of a triple-junction solar cell with 1.0 eV GaAsBi absorber

Improved Thermal Performance of InGaAs/GaAs Nanomembrane HEMTs Transferred onto Various Substrates by Epitaxial Lift-Off

Achieving Large‐Area, Crack‐Free Epitaxial Lift‐Off of Inverted Metamorphic Multijunction Solar Cells by Ag Electrode Extension and the Counterintuitive Use of Temporary Rigid Carrier

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