Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer

Le, Phu Tran Phong; Elshof, Johan E. ten; Koster, Gertjan

doi:10.1038/s41598-021-91848-2

Cited by 24 publications

(25 citation statements)

References 44 publications

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“…67 Sr 0.33 MnO 3 were successfully grown on SAO sacrificial layer and transferred onto arbitrary substrates. [ 27,28 ]…”

Section: Fabrication Of Single‐crystal Freestanding Thin Filmsmentioning

confidence: 99%

“…67 Sr 0.33 MnO 3 were successfully grown on SAO sacrificial layer and transferred onto arbitrary substrates. [27,28] Interestingly, by controlling the ratio between Ca, Sr, and Ba the reduced lattice parameter of (Ca,Sr,Ba) 3 Al 2 O 6 can be continuously tuned from 3.819 Å (100% Ca) to 4.124 Å (100% Ba) (Figure 2a). [57,56] For example, Ca 2 SrAl 2 O 6 was used as a seed sacrificial layer for La 0.7 Ca 0.3 MnO 3 growth due to the nearly perfect lattice match (<0.1%).…”

Section: Figure 2bmentioning

confidence: 99%

“…[57,56] For example, Ca 2 SrAl 2 O 6 was used as a seed sacrificial layer for La 0.7 Ca 0.3 MnO 3 growth due to the nearly perfect lattice match (<0.1%). [55] The minimization lattice mismatches SrTiO 3 [12,[19][20][21][22][23] La x Sr 1−x MnO 3 [19,28,58] BaTiO 3 [59][60][61][62][63] BiFeO 3 [64,65] SrRuO 3 [27,60] LaNiO 3 [66] BiMnO 3 [67] Sr 2 IrO 4 [68] Fe 3 O 4 [69,70] CeO 2 [71] La 0.7 Ca 0.3 MnO 3 [72] [(La 0.7 Sr 0.3 MnO 3 ) 5 /(SrTiO SrTiO 3 [32] n-SrTiO 3 /n-PbTiO 3 /n-SrTiO 3 [33] [(PbTiO 3 ) 16 /(SrTiO 3 ) 16 ] 8 [33] PPC PMMA Water RT -Sr The synthesis method of each sacrificial thin film is shown along with synthesis conditions, substrates, and etching conditions; In the table, T, P O 2 , P Ar , and E indicate the synthesis temperature, pressure of oxygen gas, pressure of argon gas, and laser energy density, respectively; The list of perovskite oxide membranes obtained, the substrate, and the transfer method are also shown; In the column of etching condition, water and RT represent deionized water and room temperature; d, h, and m denote days, hours, and minutes, respectively. can largely improve the quality of the released membranes by hindering the formation of cracks, [55] which has motivated the exploration of sacrificial layers such as Ca 2 SrAl 2 O 6 ( [56,55,[52][53][54] However, small Ca ions can make more distorted geometri...…”

Section: Figure 2bmentioning

confidence: 99%

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Freestanding Perovskite Oxide Films: Synthesis, Challenges, and Properties

et al. 2022

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In this review paper, recent progress in the fabrication, transfer, and fundamental physical properties of freestanding oxide perovskite thin films is discussed. First, the main strategies for the synthesis and transfer of freestanding perovskite thin films are analyzed. In this initial section, particular attention is devoted to the use of water-soluble (Ca,Sr,Ba) 3 Al 2 O 6 thin films as sacrificial layers, one of the most promising techniques for the fabrication of perovskite membranes. The main functionalities that have been observed in freestanding perovskite thin films are then reviewed. In doing so, the authors begin by describing the emergence of new phenomena in ultrathin perovskite membranes when released from the substrate. They then move on to a summary of the functional properties that are observed in freestanding perovskite membranes under the application of strain. Indeed, freestanding thin films offer the unique possibility to actively control the strain state far beyond what can be observed with traditional methods, allowing the investigation of the profound interplay between structural and electronic properties in oxides. Overall, this review highlights the potential of oxide-based freestanding thin films to become the preferred platform for the study of novel functionalities in perovskite oxide materials.

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“…67 Sr 0.33 MnO 3 were successfully grown on SAO sacrificial layer and transferred onto arbitrary substrates. [ 27,28 ]…”

Section: Fabrication Of Single‐crystal Freestanding Thin Filmsmentioning

confidence: 99%

Section: Figure 2bmentioning

confidence: 99%

Section: Figure 2bmentioning

confidence: 99%

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Freestanding Perovskite Oxide Films: Synthesis, Challenges, and Properties

et al. 2022

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“…[15][16][17][18][19][20][21][22][23][24][25][26][27][28] The methods typically rely on: 1) controllable weakening of epitaxial crystals; [16] 2) releasing thin oxide films using sacrificial interlayers and selective etching (Figure 1a); [17] and 3) self-formed freestanding oxide thin films. [18] These innovative approaches, especially the sacrificial interlayer etching method, have produced a broad range of new freestanding oxide films of, e.g., cubic SrTiO 3 , [19] BaTiO 3 , [20] BiFeO 3 , [21] SrRuO 3 , [22] pseudocubic La 0.7 Ca 0.3 MnO 3 , [23] La 0.7 Sr 0.3 MnO 3 , [24] fluorite CeO 2 , [25] BaTiO 3 /La 0.7 Sr 0.3 MnO 3 bilayers, [26] La 0.7 Sr 0.3 MnO 3 /BiFeO 3 bilayers, [27] as well as (La 0.7 Sr 0.3 MnO 3 ) n /(SrTiO 3 ) n ] n superlattices. [17] These freestanding films and multilayers exhibit a wide range of exciting physical and chemical properties combined with the option of transferring them onto arbitrary substrates, thus bypassing the epitaxial roadblock.…”

Section: Introductionmentioning

confidence: 99%

Stacking and Twisting of Freestanding Complex Oxide Thin Films

et al. 2022

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The integration of dissimilar materials in heterostructures has long been a cornerstone of modern materials science—seminal examples are 2D materials and van der Waals heterostructures. Recently, new methods have been developed that enable the realization of ultrathin freestanding oxide films approaching the 2D limit. Oxides offer new degrees of freedom, due to the strong electronic interactions, especially the 3d orbital electrons, which give rise to rich exotic phases. Inspired by this progress, a new platform for assembling freestanding oxide thin films with different materials and orientations into artificial stacks with heterointerfaces is developed. It is shown that the oxide stacks can be tailored by controlling the stacking sequences, as well as the twist angle between the constituent layers with atomically sharp interfaces, leading to distinct moiré patterns in the transmission electron microscopy images of the full stacks. Stacking and twisting is recognized as a key degree of structural freedom in 2D materials but, until now, has never been realized for oxide materials. This approach opens unexplored avenues for fabricating artificial 3D oxide stacking heterostructures with freestanding membranes across a broad range of complex oxide crystal structures with functionalities not available in conventional 2D materials.

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“…In this strategy, a sacrificial layer is placed between the functional film and the substrate that is selectively removable by a chemical etchant retaining the properties of the thin films. SiO 2 , MgO, La 0.7 Sr 0.3 MnO 3 (LSMO), and Sr 3 Al 2 O 6 (SAO) have been used as sacrificial layers [33,[36][37][38][39] for deposition of multiferroic BFO and CoFe 2 O 4 (CFO) thin films on mechanically rigid substrates such as SrTiO 3 (STO), LaAlO 3 (LAO), NdGaO 3 , and TbScO 3 . Zhang et al [29] prepared freestanding CFO epitaxial thin films by the transfer process using MgO as a sacrificial layer, where CFO epitaxial thin films were grown on MgO-buffered (001) STO substrates by the PLD technique and transferred onto flexible PI substrates.…”

Section: Methods Of Fabricating Flexible Multiferroic Filmsmentioning

confidence: 99%

Recent Progress in Flexible Multiferroics

et al. 2022

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A great deal of interest has grown in both academia and industry toward flexible multiferroics in the recent years. The coupling of ferromagnetic properties with ferroelectric properties in multiferroic materials opens up many opportunities in applications such as magnetoelectric random access memories, magnetic field sensors, and energy harvesters. Multiferroic materials on a flexible platform bring an exciting opportunity for the next generation of consumer electronics owing to their unique characteristics of wearability, portability, and weight reduction. However, the fabrication of flexible multiferroic devices is still a great challenge due to various technical difficulties, including the requirement of high growth temperature of the oxide-based multiferroic materials, their lattice mismatch with the flexible substrates, and the brittleness of the functional layers. In this review article, we will discuss different methods of fabricating flexible or even freestanding oxide films to achieve flexible electronics. This article will address the benefits and challenges of each synthesis method in terms of interlayer interactions and growth parameters. Furthermore, the article will include an account of the possible bending limits of different flexible substrates without degrading the properties of the functional layer. Finally, we will address the challenges, opportunities, and future research directions in flexible multiferroics.

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Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer

Cited by 24 publications

References 44 publications

Freestanding Perovskite Oxide Films: Synthesis, Challenges, and Properties

Freestanding Perovskite Oxide Films: Synthesis, Challenges, and Properties

Stacking and Twisting of Freestanding Complex Oxide Thin Films

Recent Progress in Flexible Multiferroics

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