Epitaxial mosaic-like Mn5Ge3 thin films on Ge(001) substrates

Alvídrez-Lechuga, Adriana; Antón, Ricardo López; Fuentes-Cobas, L.; Holguín-Momaca, José T.; Solís-Canto, O.; Espinosa‐Magaña, F.; Olive-Méndez, Sion F.

doi:10.1016/j.jallcom.2018.05.209

Cited by 8 publications

(6 citation statements)

References 34 publications

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“…The fact that the patterns are constituted of several peaks is a consequence of having textured films, where single grains have a complex but well-defined epitaxial relationship as evidenced in a previous work by transmission electron microscopy (reference [18]). In figure 1(c The interface quality of the films grown by RDE and SPE, examined by high-resolution transmission electron microscopy [18] do not exhibit any observable differences. In both cases the interface is extended a few atomic layers, corresponding approximately to the thickness of Schottky barriers, i.e.…”

Section: Resultsmentioning

confidence: 73%

“…001). (c) Reprinted from [18]. Copyright (2018), with permission from Elsevier, employing VESTA software (reference [22]).…”

Section: Introductionmentioning

confidence: 99%

“…Mn 5 Ge 3 grown on Ge(111) is also proposed as a potential prospect for SC/FM heterostructures for spin injection [16]. However, the growth of Mn 5 Ge 3 on Ge(001) substrates has been scarcely investigated [9,[17][18][19]. Mn 5 Ge 3 /Ge(001)heterostructures offer the possibility of integration into the Si(001) production technology, as Ge epitaxial layers can be grown on Si(001) substrates, through a (001) SiGe interlayer [20].…”

Section: Introductionmentioning

confidence: 99%

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Strong magnetization and anisotropy of Mn₅Ge₃ thin films on Ge(001)

Alvídrez-Lechuga

Antón

Gutiérrez-Pérez

et al. 2021

J. Phys.: Condens. Matter

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We report on the growth of Mn5Ge3 thin films on Ge(001) substrates following two methods: solid phase epitaxy (SPE) and reactive deposition epitaxy (RDE). We have varied the thickness of the films, in order to study the magnetization and anisotropy evolution. A strongly enhanced magnetization of 1580 kA m−1, compared to 1200 ± 150 kA m−1 for films grown on Ge(111), has been measured on ultrathin films of 5 nm grown by RDE. Thicker films exhibited magnetizations <750 kA m−1. The films grown by SPE also exhibit strong magnetization of 1490 kA m-1 and a drop of magnetization by increasing the film thickness. The effective magnetic anisotropy exhibits a more complex behavior: increases on the SPE films and decreases on the RDE films while increasing the thickness of the films. Magnetostatic and interfacial anisotropies were considered and calculated. The results are discussed in terms of the growth methods and microstructure of the films.

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Section: Resultsmentioning

confidence: 73%

“…001). (c) Reprinted from [18]. Copyright (2018), with permission from Elsevier, employing VESTA software (reference [22]).…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Strong magnetization and anisotropy of Mn₅Ge₃ thin films on Ge(001)

Alvídrez-Lechuga

Antón

Gutiérrez-Pérez

et al. 2021

J. Phys.: Condens. Matter

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“…In the search for a Ge-based material exhibiting an effective Schottky barrier with a Si-compatible semiconductor, the Mn 5 Ge 3 compound has been proposed as a promising candidate due to its high resistivity, its direct integration on a Si or Ge substrate [1][2][3] , its easy growth implementation via solid phase epitaxy (SPE) 4,5 , sputtering 6 or low-temperature codeposition 7 , and its atomically abrupt interface with Ge. Its implementation in metaloxide-semiconductor capacitors 8 and in Schottky diodes on n-type Ge 8-10 has paved the way toward its use in device structures.…”

Section: Introductionmentioning

confidence: 99%

Unveiling the atomic position of C in Mn5Ge3Cx thin films

Michez

Petit

Heresanu

et al. 2022

Phys. Rev. Materials

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Heavily carbon-doped Mn 5 Ge 3 is a unique compound for spintronics applications as it meets all the requirements for spin injection and detection in group-IV semiconductors. Despite the great improvement of the magnetic properties induced by C incorporation into Mn 5 Ge 3 compounds, very little information is available on its structural properties and the genuine role played by C atoms.In this paper, we have used a combination of advanced techniques to extensively characterize the structural and magnetic properties of Mn 5 Ge 3 C x films grown on Ge(111) by solid phase epitaxy as a function of C concentration. The increase of the Curie temperature induced by C doping up to 435 K is accompanied by a decrease of the out-of-plane c-lattice parameter. The Mn and C chemical environments and positions in the Mn 5 Ge 3 lattice have been thoroughly investigated usingx-ray absorption spectroscopy techniques (x-ray absorption near-edge structures and extended xray absorption fine structures) and scanning transmission electronic microscopy (STEM) combined to electron energy loss spectroscopy for the chemical analysis. The results have been systematically compared to a variety of structures that were identified as favorable in terms of formation energy by ab initio calculations. For x ≤ 0.5, the C atoms are mainly located in the octahedral voids formed by Mn atoms, which is confirmed by simulations and seen for the first time in real space by STEM. However, the latter reveals an inhomogeneous C incorporation, which is qualitatively correlated to the broad magnetic transition temperature. A higher C concentration leads to the formation of manganese carbide clusters that we identified as Mn 23 C 6 . Interestingly, other types of defects, such as interstitial Ge atoms, vacancies of Mn, and their association into line defects, have been detected. They take part in the strain relaxation process and are likely to be intimately related to the growth process. This paper provides a complete picture of the structure of Mn 5 Ge 3 C x in thin films grown by solid phase epitaxy, which is essential for optimizing their magnetic properties.

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“…It has been found that T C increases with carbon doping up to 445 K [1]. Mn 5 Ge 3 has a hexagonal crystal structure P6 3 /mcm and lattice constants a = 7.184 Å and c = 5.053 Å, allowing epitaxial growth on Ge(111) substrates within a lattice mismatch of 3.7% [2]. On the other hand, Mn 5 Ge 3 /Ge (001) heterostructures are compatible with the Si(001) technology [3].…”

mentioning

confidence: 99%

High-Temperature Growth of Mn5Ge3Cx Thin Films on Ge (001) Substrates: Reactive Deposition Epitaxy vs. Solid Deposition Epitaxy

Alvídrez-Lechuga¹,

Holguín-Momaca²,

Santillán-Rodríguez³

et al. 2022

Microscopy and Microanalysis

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The need for electronic devices with a greater data storage capacity, faster data processing and lower power consumption, forces to reduce the size of electronic components. Spintronic devices, such as the spin-field effect transistor, require spin injection into IV-group semiconductors via a Schottky barrier at room temperature (RT). Mn 5 Ge 3 is a ferromagnetic phase with a Curie temperature (T C ) of ~ 296 K, and spin polarization above 42%. It has been found that T C increases with carbon doping up to 445 K [1]. Mn 5 Ge 3 has a hexagonal crystal structure P6 3 /mcm and lattice constants a = 7.184 Å and c = 5.053 Å, allowing epitaxial growth on Ge(111) substrates within a lattice mismatch of 3.7% [2]. On the other hand, Mn 5 Ge 3 /Ge (001) heterostructures are compatible with the Si(001) technology [3]. In this work, we present the growth of Mn 5 Ge 3 /Ge (001) thin films by the solid phase epitaxy (SPE) and reactive deposition epitaxy (RDE) methods, using the magnetron-sputtering technique. The RDE method consists on the co-deposition of Mn and C at a substrate temperature (T s ) of 750 °C. The SPE method consists on the co-deposition of Mn and C at room temperature followed by thermal annealing at a T s = 750 °C.

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Epitaxial mosaic-like Mn5Ge3 thin films on Ge(001) substrates

Cited by 8 publications

References 34 publications

Strong magnetization and anisotropy of Mn₅Ge₃ thin films on Ge(001)

Strong magnetization and anisotropy of Mn₅Ge₃ thin films on Ge(001)

Unveiling the atomic position of C in Mn5Ge3Cx thin films

High-Temperature Growth of Mn5Ge3Cx Thin Films on Ge (001) Substrates: Reactive Deposition Epitaxy vs. Solid Deposition Epitaxy

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Epitaxial mosaic-like Mn5Ge3 thin films on Ge(001) substrates

Cited by 8 publications

References 34 publications

Strong magnetization and anisotropy of Mn5Ge3 thin films on Ge(001)

Strong magnetization and anisotropy of Mn5Ge3 thin films on Ge(001)

Unveiling the atomic position of C in Mn5Ge3Cx thin films

High-Temperature Growth of Mn5Ge3Cx Thin Films on Ge (001) Substrates: Reactive Deposition Epitaxy vs. Solid Deposition Epitaxy

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Strong magnetization and anisotropy of Mn₅Ge₃ thin films on Ge(001)

Strong magnetization and anisotropy of Mn₅Ge₃ thin films on Ge(001)