Epitaxial Si growth on fin for NMOS device performance improvement

Mao, Gang; Li, Yong; Yang, Rex

doi:10.1109/cstic.2015.7153434

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Device Structure and Resistance Components1

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2016

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“…The epitaxial source=drain is used to improve channel mobility and is designed with an expanded volume in order to reduce the series resistance. 13) This novel structure can lead to a nonuniform current distribution when the current flows from the expanded source=drain region to a narrow channel.…”

Section: Device Structure and Resistance Componentsmentioning

confidence: 99%

Effect of three-dimensional current distribution on characterizing parasitic resistance of FinFETs

Meng¹,

Lin²,

Chiu³

et al. 2016

Jpn. J. Appl. Phys.

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A thorough analysis of the FinFET resistance and current distribution is presented. By combining multiple conventional and novel measurement techniques, the key components that contribute to the parasitic resistance of FinFETs can be quantified. Through a three-dimensional (3D) FinFET resistance network model, the impact of the FinFET 3D structure on the current distribution and parasitic resistance is analyzed. The heterogeneous current distribution, known as the current crowding effect, is also discussed with possible alleviation methods through 3D simulation.

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Section: Device Structure and Resistance Componentsmentioning

confidence: 99%