Epitaxial SiGeC waveguide photodetector grown on Si substrate with response in the 1.3-1.55-μm wavelength range

Huang, Pochi; Sakamoto, Kazumitsu; Wang, K.L.; Trinh, P.D.; Jalali, Bahram

doi:10.1109/68.553101

Cited by 29 publications

(8 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…At the same time the concept of silicon microphotonics or optoelectronics emerged impetuously [7][8][9]. At the end of the last century, the heterogrowth of germanium on silicon was mastered, which allows the development of high-speed CMOS compatible optical receivers [10,11]. At the same time, silicon-based waveguides shrank in size: from more than 100 μm 2 (typical of waveguides based on refractive-index contrast given by different doping) during the 1980s to the 5 μm 2 size of rib waveguides where Si/SiO 2 was used.…”

Section: Introduction: Silicon Photonicsmentioning

confidence: 99%

Nanosilicon photonics

Daldosso¹,

Pavesi

2009

Laser & Photonics Reviews

162

105

View full text Add to dashboard Cite

Silicon photonics is no longer an emerging field of research and technology but a present reality with commercial products available on the market, where low-dimensional silicon (nanosilicon or nano-Si) can play a fundamental role. After a brief history of the field, the optical properties of silicon reduced to nanometric dimensions are introduced. The use of nano-Si, in the form of Si nanocrystals, in the main building blocks of silicon photonics (waveguides, modulators, sources and detectors) is reviewed and discussed. Recent advances of nano-Si devices such as waveguides, optical resonators (linear, rings, and disks) are treated. Emphasis is placed on the visible optical gain properties of nano-Si and to the sensitization effect on Er ions to achieve infrared light amplification. The possibility of electrical injection in light-emitting diodes is presented as well as the recent attempts to exploit nano-Si for solar cells. In addition, nonlinear optical effects that will enable fast all-optical switches are described.

show abstract

Section: Introduction: Silicon Photonicsmentioning

confidence: 99%

Nanosilicon photonics

Daldosso¹,

Pavesi

2009

Laser & Photonics Reviews

162

105

View full text Add to dashboard Cite

show abstract

“…Orner et al [3] have successfully grown fully relaxed layers of Ge rich alloys on Si substrate. Due to its lower band gap such layers can be used as photodetectors at 1.55 µm [4].…”

Section: Introductionmentioning

confidence: 99%

Alloy and phonon scattering limited mobility in strain‐free ternary Si_1–x–yGe_xC_y

Mukhopadhyay

Basu

2004

Physica Status Solidi (b)

View full text Add to dashboard Cite

Estimates are made of the mobility limited by alloy disorder and phonon scattering mechanisms in strain free Ge-rich ternary layer Si 1-x-y Ge x C y grown on Si substrate. The expression for alloy scattering potential in ternary was derived for the first time using virtual crystal approximation and it differs from the expressions for ternary and quaternary alloys of III -V compounds. The phonon scattering processes are taken to be identical with those in pure Ge. Conservative estimates of mobility made by using reasonable values of alloy scattering potential indicate that mobility is predominantly limited by alloy scattering for 0.85 < x < 1 and the effect of C mole fraction (y) is not much significant for y < 0.1.

show abstract

“…20 Time-integrated (fast, circle; slow, square) spectra for the sample A. The Er 3þ spectral features are clearly visible for the slow process.…”

mentioning

confidence: 99%

Photonics Application of Silicon Nanocrystals

Anopchenko

Daldosso

Guider

et al. 2010

Silicon Nanocrystals

View full text Add to dashboard Cite

Epitaxial SiGeC waveguide photodetector grown on Si substrate with response in the 1.3-1.55-μm wavelength range

Cited by 29 publications

References 13 publications

Nanosilicon photonics

Nanosilicon photonics

Alloy and phonon scattering limited mobility in strain‐free ternary Si_1–x–yGe_xC_y

Photonics Application of Silicon Nanocrystals

Contact Info

Product

Resources

About

Epitaxial SiGeC waveguide photodetector grown on Si substrate with response in the 1.3-1.55-μm wavelength range

Cited by 29 publications

References 13 publications

Nanosilicon photonics

Nanosilicon photonics

Alloy and phonon scattering limited mobility in strain‐free ternary Si1–x–yGexCy

Photonics Application of Silicon Nanocrystals

Contact Info

Product

Resources

About

Alloy and phonon scattering limited mobility in strain‐free ternary Si_1–x–yGe_xC_y