Epitaxial SrRuO3 Thin Films Deposited on SrO buffered-Si(001) Substrates for Ferroelectric Pb(Zr0.2Ti0.8)O3 Thin Films

Ferroelectric and piezoelectric responses of (110) and (001)-oriented epitaxial Pb(Zr 0.52 Ti 0.48 )O 3 thin films on all-oxide layers buffered silicon

“…Further note the slightly larger temperature coefficient of resistance of LNO than that of SRO. These observed resistivities of thin-film electrodes are comparable with previously [42,43], and indicate that the SRO and LNO layers in this study can be a good lattice matched metallic electrode for ferroelectric PZT oxide thin films. Finally we mention for reference that Pt thin film electrodes on Si substrates were found to have a room temperature resistivity in the range 0.18-0.21 mV cm [44,45], thus a factor 10 lower than the oxide electrode layers.…”