Epitaxial structures based on compensated GaAs for γ- and X-ray detectors

Budnitsky, D.L.; Germogenov, V. P.; Guschin, S.M.; Larionov, A.A.; Porokhovnichenko, L. P.; Потапов, А. И.; Толбанов, О. П.; Vorobiev, A.P.

doi:10.1016/s0168-9002(01)00821-x

Cited by 11 publications

(8 citation statements)

References 5 publications

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“…Since it does not vary with frequency, shot noise is the major noise component in a detector, whereas generation-recombination and modulation noise decrease with growing frequency [18].…”

Section: Figures Of Meritmentioning

confidence: 99%

“…For photons in the range 60-100 keV, GaAs thicknesses up to 1000 µm are necessary to obtain an adequate proportion of photons absorbed, because the linear absorption coefficient falls with increasing photon energy [18]. At the same time, an increase in thickness will also lead to a decrease in CCE if the drift length L = µτE is not sufficiently large.…”

Section: Selection Of a Sensing Materialsmentioning

confidence: 99%

“…Thick epitaxial GaAs films are mostly grown by liquid-phase epitaxy [18,28] or chemical vapor deposition [6,17,30], particularly metal-organic one. Liquidphase epitaxy can yield films up to 150-250 µm thick, but these tend to show an undulating surface.…”

Section: Selection Of a Sensing Materialsmentioning

confidence: 99%

“…In other studies, a Cr-compensated i-layer was grown by liquid-phase epitaxy (LPE) on an n + -substrate, and the p + -layer was produced by VPE [18,28]. The i-layer thickness was 150-250 µm and could be increased to 400 µm by repeated growth.…”

Section: Fabrication Technology For the Sensing Portion Of A Hybrid Dmentioning

confidence: 99%

“…Finally, we note that research into p-i-n detectors tends to focus on the band structure of epitaxial films [17,18,30,[41][42][43][44].…”

Section: Fabrication Technology For the Sensing Portion Of A Hybrid Dmentioning

confidence: 99%

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GaAs Pixel-Detector Technology for X-ray Medical Imaging: A Review

2005

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An attempt is made to analyze and summarize the literature data on hybrid x-ray GaAs pixel detectors designed for medical imaging. Criteria are stated for selecting a semiconductor material. It is shown that GaAs is currently preferable to the other semiconductor materials. Detector figures of merit used to select a semiconductor material and a process technology are listed. Major types of x-ray detector based on bulk-grown or epitaxial GaAs are described, namely, the planar Schottky, the planar p-i-n, and the 3D detector. The influence is considered of different process steps (contact formation, passivation coating, hybridization, etc.) on detector figures of merit. Monolithic technology is briefly discussed.

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“…Since it does not vary with frequency, shot noise is the major noise component in a detector, whereas generation-recombination and modulation noise decrease with growing frequency [18].…”

Section: Figures Of Meritmentioning

confidence: 99%

Section: Selection Of a Sensing Materialsmentioning

confidence: 99%

Section: Selection Of a Sensing Materialsmentioning

confidence: 99%

Section: Fabrication Technology For the Sensing Portion Of A Hybrid Dmentioning

confidence: 99%

“…Finally, we note that research into p-i-n detectors tends to focus on the band structure of epitaxial films [17,18,30,[41][42][43][44].…”

Section: Fabrication Technology For the Sensing Portion Of A Hybrid Dmentioning

confidence: 99%

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GaAs Pixel-Detector Technology for X-ray Medical Imaging: A Review

2005

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Gamma-ray detectors based on GaAs<Cr> for nanostructural investigations

et al. 2008

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The progress in nanotechnologies has been largely due to the advent of a new generation of gamma-ray sources and position detectors, which can ensure both coordinate and temporal measurements within the nanoand femtoranges. The paper offers scientific and engineering solutions related to designing detector materials and structures for detecting single quanta of x-and γ-rays and high-energy charged particles. These are multielement position detectors of a new generation for nanostructure imaging and examination in gamma rays.

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