Epitaxial thin film growth of garnet-, GdFeO3-, and YMnO3-type LuFeO3 using pulsed laser deposition

Katayama, Tsukasa; Hamasaki, Yosuke; Yasui, Shintaro; Miyahara, A.; Itoh, Makoto

doi:10.1016/j.tsf.2017.09.013

Cited by 8 publications

(3 citation statements)

References 21 publications

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“…We note that thin film stabilization is a powerful platform for synthesizing phases which are metastable as bulk crystals 57 . While YMn 1−x Fe x O 3 could be stabilized in the P6 3 cm structure for x <0.3 in bulk crystals, epitaxial stabilization has led to the construction of LuFeO 3 with the hexagonal P6 3 cm structure [14][15][16]58 . Explicit A-site ions are colored in yellow and B-site ions are colored in blue.…”

Section: Stability Of the Hexagonal Abo 3 Phasementioning

confidence: 99%

“…One of the powerful consequences of this minimization of interfacial energy between the substrate and film -known as epitaxial stabilization -is that a metastable crystal structure, not the lowest energy structure, can be grown 111,112 . By careful choice of substrate 58,113 , epitaxial stabilization enables the exploration of compounds in their metastable and non-equilibrium structures, opening the door to novel materials with new functionalities.…”

Section: Epitaxy Of Metastable Hexagonal Abo 3 Compoundsmentioning

confidence: 99%

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Epitaxy of hexagonal ABO$_3$ quantum materials

Nordlander¹,

Anderson²,

Brooks³

et al. 2022

Preprint

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Hexagonal ABO 3 oxides (A, B = cation) are a rich materials class for realizing novel quantum phenomena. Their hexagonal symmetry, oxygen trigonal bipyramid coordination and quasi-two dimensional layering give rise to properties distinct from those of the cubic ABO 3 perovskites. As bulk materials, most of the focus in this materials class has been on the rare earth manganites, RMnO 3 (R = rare earth); these materials display coupled ferroelectricity and antiferromagnetic order. In this review, we focus on the thin film manifestations of the hexagonal ABO 3 oxides. We cover the stability of the hexagonal oxides and substrates which can be used to template the hexagonal structure. We show how the thin film geometry not only allows for further tuning of the bulk-stable manganites but also the realization of metastable hexagonal oxides such as the RFeO 3 that combine ferroelectricity with weak ferromagnetic order.The thin film geometry is a promising platform to stabilize additional metastable hexagonal oxides to search for predicted high-temperature superconductivity and topological phases in this materials class.

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Section: Stability Of the Hexagonal Abo 3 Phasementioning

confidence: 99%

Section: Epitaxy Of Metastable Hexagonal Abo 3 Compoundsmentioning

confidence: 99%

Epitaxy of hexagonal ABO$_3$ quantum materials

Nordlander¹,

Anderson²,

Brooks³

et al. 2022

Preprint

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“…[26] A metastable hexagonal LFO phase was found to be ferroelectric due to its noncentrosymmetric crystal structure, with T C = 1020 K and P r up to ≈10 µC cm −2 at room temperature. [27][28][29] Both orthorhombic and hexagonal LFO phases have been grown in the form of thin films using pulsed laser deposition (PLD), [25,27,30] radio frequency magnetron sputtering, [31,32] or molecular beam epitaxy. [28] When the two phases are grown together, the film can show multiferroicity with a magnetization of ≈0.24 µ B per f.u.…”

Section: Introductionmentioning

confidence: 99%

Composition‐Dependent Ferroelectricity of LuFeO₃ Orthoferrite Thin Films

Cho

Klyukin

et al. 2023

Adv Elect Materials

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oxides are strongly influenced by point defects resulting from a nonideal cation stoichiometry. [7][8][9][10][11][12] Such point defects can be present in much higher concentrations in thin films compared to bulk, due to epitaxial stabilization of a crystal structure with a composition deviating from bulk. [11,12] The orthoferrites (RFeO 3 ) are perovskite-derived structures in which tilting of the Fe octahedra yields an orthorhombic lattice with four formula units (f.u.) per unit cell. [13] Fe 3+ cations are coupled antiferromagnetically with Néel temperature T N ≈ 640 K. The Dzyaloshinskii-Moriya interaction (DMI) between neighboring Fe 3+ leads to a small canting angle and a net moment ≈0.05 µ B per f.u. at room temperature. The antiferromagnetic configuration of Fe 3+ (Γ 1 , Γ 2 , or Γ 4 in Bertaut notation) and the magnetic transition temperatures between different antiferromagnetic states varies with the rare earth. For a nonmagnetic R 3+ such as Lu 3+ , the configuration remains Γ 4 (G x A y F z , i.e., G-type antiferromagnet with spins oriented along x, with secondary A-type antiferromagnetic arrangement along y, and a net moment along z) from 0 K up to T N . [14,15] Some orthoferrites can exhibit multiferroicity at cryogenic temperatures when R 3+ ions are magnetically ordered. [16] The mechanism for such ferroelectricity is the exchange interaction between R 3+ and Fe 3+ , which leads to ionic displacement, breaks the symmetry, and thus leads to polarization on the order of 0.1 µC cm −2 . [16,17] Introducing room-temperature ferroelectricity into antiferromagnetic orthoferrites is an appealing strategy to expand the range of room temperature multiferroic materials. The most widely studied multiferroic is BiFeO 3 (BFO), which is a rhombohedral or tetragonal structure. Its ferroelectricity is derived primarily from the Bi 3+ lone pairs and exhibits a high ferroelectric Curie temperature (T C = 1103 K). [18] As in the rare earth orthoferrites, the magnetism in BFO arises from the canting of antiferromagnetically ordered Fe 3+ spins with T N = 643 K. Rare earth orthoferrites lack the lone pairs of BFO, and the centrosymmetric orthorhombic space group (Pbnm) prohibits ferroelectricity. However, Y Fe antisite defects in Y-rich yttrium orthoferrite YFeO 3 (YFO) thin films bring about a noncentrosymmetric structural distortion and induce ferroelectric polarization of ≈10 µC cm −2 at room temperature. [19][20][21] According to first principles calculations, such an antisite defect mechanism is expected to be applicable in other rare earth rich orthoferrites, with the polarization increasing with decreasing ionic radius of R 3+ ; LuFeO 3 (LFO) lies at the higher end of This work characterizes the structural, magnetic, and ferroelectric properties of epitaxial LuFeO 3 orthoferrite thin films with different Lu/Fe ratios. LuFeO 3 thin films are grown by pulsed laser deposition on SrTiO 3 substrates with Lu/Fe ratio ranging from 0.6 to 1.5. LuFeO 3 is antiferromagnetic with a weak canted moment perpendicular to the f...

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Temperature-driven magnetic and structural transitions in multiferroic Lu(1-)Sc FeO3

Pakalniškis,

Niaura,

Ramanauskas

et al. 2024

Journal of Alloys and Compounds

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Epitaxial thin film growth of garnet-, GdFeO3-, and YMnO3-type LuFeO3 using pulsed laser deposition

Cited by 8 publications

References 21 publications

Epitaxy of hexagonal ABO$_3$ quantum materials

Epitaxy of hexagonal ABO$_3$ quantum materials

Composition‐Dependent Ferroelectricity of LuFeO₃ Orthoferrite Thin Films

Temperature-driven magnetic and structural transitions in multiferroic Lu(1-)Sc FeO3

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Epitaxial thin film growth of garnet-, GdFeO3-, and YMnO3-type LuFeO3 using pulsed laser deposition

Cited by 8 publications

References 21 publications

Epitaxy of hexagonal ABO$_3$ quantum materials

Epitaxy of hexagonal ABO$_3$ quantum materials

Composition‐Dependent Ferroelectricity of LuFeO3 Orthoferrite Thin Films

Temperature-driven magnetic and structural transitions in multiferroic Lu(1-)Sc FeO3

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Composition‐Dependent Ferroelectricity of LuFeO₃ Orthoferrite Thin Films