2024
DOI: 10.1016/j.tsf.2024.140201
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Epitaxial thin films of binary Eu-compounds close to a valence transition

Sebastian Kölsch,
Alfons Georg Schuck,
Michael Huth
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Cited by 1 publication
(5 citation statements)
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“…From temperature-dependent resistivity data we could confirm a phase transition at about 72 K (see figure 1(b)), which we attributed to the onset of ferromagnetic order. This was further corroborated by Hall effect and magnetoresistance measurements [7]. An important consequence of the combined effects of lattice symmetry differences at the substrate-thin-film interface and weak thin-film substrate interaction, we observed an island growth mode with multiple growth domains; see below in figures 2(a) and (b).…”
Section: Introductionsupporting
confidence: 84%
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“…From temperature-dependent resistivity data we could confirm a phase transition at about 72 K (see figure 1(b)), which we attributed to the onset of ferromagnetic order. This was further corroborated by Hall effect and magnetoresistance measurements [7]. An important consequence of the combined effects of lattice symmetry differences at the substrate-thin-film interface and weak thin-film substrate interaction, we observed an island growth mode with multiple growth domains; see below in figures 2(a) and (b).…”
Section: Introductionsupporting
confidence: 84%
“…To this end, the Eu and Pd flux rates were adjusted using a quartz crystal microbalance to yield the required stoichiometry. According to the results of the growth of epitaxial thin films of EuPd3 on MgO (100) substrates, Eu desorption due to the high substrate temperature plays a major role during preparation of Eu-based films, see [7]. This so called MBE-or Eu-distillation effect also occurs during the formation of stoichiometric EuO thin films for sufficiently high growth temperatures and with a chemically inert substrate at a low oxygen partial pressure [8].…”
Section: Thin Film Growthmentioning
confidence: 99%
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