Epitaxially stacked GaAs/GaAlAs lasers using a low-resistance tunnel junction

Real index-guided buried ridge InGaAlP 650 nm band lasers with p+–n+ buried tunnel junctions are demonstrated. Located on top of the buried ridges, the tunnel junctions, made of InGaAs/GaAs superlattices with modulation doping, were introduced as the current injection window areas. The large band gap In0.5Al0.5P layers were directly regrown around the ridges using metalorganic chemical vapor deposition to serve as the current blocking layers. Real index optical waveguiding in the lateral direction was also provided by the smaller refractive index of In0.5Al0.5P layers. The lasers showed lower threshold current and higher slope efficiency compared to conventional complex index-guided InGaAlP lasers with GaAs current blocking layers, and had low internal loss of about 5.4 cm−1.

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Low-resistance tunnel junctions on GaAs substrates using GaInNAs

Mars

Chang

Leary

et al. 2004

Applied Physics Letters

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Using molecular-beam epitaxy, we have fabricated p-n tunnel junctions lattice matched to GaAs substrates that consist of highly C-doped Ga0.93In0.07As on the p side, and highly Si-doped Ga0.93In0.07N0.02As0.98 on the n side. The introduction of N on the n side of the tunnel junction: (1) lowers the conduction band edge while leaving the valence band edge unchanged, (2) allows the introduction of In to further lower the band gap while remaining lattice matched to GaAs, and (3) increases the maximum Si donor activation that can be achieved. All three of these effects increase the tunneling probability for carriers across the junction and decrease the specific resistance. We estimate the active C acceptors on the p side to be 1.5×1020 cm−3 and the active Si donors on the n side to be 1.8×1019 cm−3. Because of the mutual passivation effect between N and Si atoms, the Si doping level was increased to 1.0×1020 cm−3 to achieve this active net donor concentration. The specific resistance of test tunnel junctions has been measured to be <1×10−5 Ω cm2 corresponding to <0.1 V drop at a current density of 10 kA/cm2. These results are a substantial improvement over corresponding test structures without N on the n side of the junction. The experimental results are in good agreement with model calculations.

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Epitaxially stacked GaAs/GaAlAs lasers using a low-resistance tunnel junction

Cited by 7 publications

References 6 publications

Optimization of p-doping in AlGaAs grown by CBE using TMA for AlGaAs/GaAs tunnel junctions

Optimization of p-doping in AlGaAs grown by CBE using TMA for AlGaAs/GaAs tunnel junctions

Real index-guided InGaAlP red lasers with buried tunnel junctions

Low-resistance tunnel junctions on GaAs substrates using GaInNAs

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