Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate

Padavala, Balabalaji; Frye, Clint D.; Wang, Xuejing; Ding, Zihao; Chen, Ruifen; Dudley, Michael; Raghothamachar, Balaji; Lü, Peng; Flanders, Bret N.; Edgar, James H.

doi:10.1021/acs.cgd.5b01525

Cited by 72 publications

(47 citation statements)

References 26 publications

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“…1(a)], belong to the group of III-V semiconductors, having been of great importance for electronic and optoelectronic applications [1][2][3][4][5][6][7][8]. BAs has recently received special attention, as it has been predicted from the first-principles approach to have a remarkably high value of thermal conductivity (κ) at room temperature (2240 W m −1 K −1 ), comparable to that of diamond [9].…”

Section: Introductionmentioning

confidence: 99%

First-principles prediction of stabilities and instabilities of compounds and alloys in the ternary B-As-P system

2017

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We examine the thermodynamic stability of compounds and alloys in the ternary B-As-P system theoretically using first-principles calculations. We demonstrate that the icosahedral B 12 As 2 is the only stable compound in the binary B-As system, while the zinc-blende BAs is thermodynamically unstable with respect to B 12 As 2 and the pure arsenic phase at 0 K, and increasingly so at higher temperature, suggesting that BAs may merely exist as a metastable phase. On the contrary, in the binary B-P system, both zinc-blende BP and icosahedral B 12 P 2 are predicted to be stable. As for the binary As-P system, As 1−x P x disordered alloys are predicted at elevated temperature-for example, a disordered solid solution of up to ∼75 at.% As in black phosphorus as well as a small solubility of ∼1 at.% P in gray arsenic at T = 750 K, together with the presence of miscibility gaps. The calculated large solubility of As in black phosphorus explains the experimental syntheses of black-phosphorus-type As 1−x P x alloys with tunable compositions, recently reported in the literature. We investigate the phase stabilities in the ternary B-As-P system and demonstrate a high tendency for a formation of alloys in the icosahedral B 12 (As 1−x P x ) 2 structure by intermixing of As and P atoms at the diatomic chain sites. The phase diagram displays noticeable mutual solubility of the icosahedral subpnictides in each other even at room temperature as well as a closure of a pseudobinary miscibility gap around 900 K. As for pseudobinary BAs 1−x P x alloys, only a tiny amount of BAs is predicted to be able to dissolve in BP to form the BAs 1−x P x disordered alloys at elevated temperature. For example, less than 5% of BAs can dissolve in BP at T = 1000 K. The small solubility limit of BAs in BP is attributed to the thermodynamic instability of BAs with respect to B 12 As 2 and As.

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Section: Introductionmentioning

confidence: 99%

First-principles prediction of stabilities and instabilities of compounds and alloys in the ternary B-As-P system

2017

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“…One of the most common ways to make BP is through bulk synthesis techniques, such as flux growth or solid-state reaction. 30,[76][77][78][79] Thin-film deposition of BP is almost invariably carried out by CVD of some kind, either metal-organic chemical vapor deposition (MOCVD), 73,80,81 or standard CVD, 68,[70][71][72]74,75,[82][83][84][85] or even plasma-enhanced CVD. 86 Other, less common deposition methods include vapor-liquid-solid growth, 87,88 thermal evaporation from powders in vacuum, 89 or sputtering in phosphine/Ar atmosphere.…”

Section: Boron Phosphidementioning

confidence: 99%

Bridging the p-type transparent conductive materials gap: synthesis approaches for disperse valence band materials

Fioretti

Morales‐Masis

2020

J. Photon. Energy

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Transparent conductive materials (TCMs) with high p-type conductivity and broadband transparency have remained elusive for years. Despite decades of research, no p-type material has yet been found to match the performance of n-type TCMs. If developed, the high-performance p-type TCMs would lead to significant advances in a wide range of technologies, including thin-film transistors, transparent electronics, flat screen displays, and photovoltaics. Recent insights from high-throughput computational screening have defined design principles for identifying candidate materials with low hole effective mass, also known as disperse valence band materials. Particularly, materials with mixed-anion chemistry and nonoxide materials have received attention as being promising next-generation p-type TCMs. However, experimental demonstrations of these compounds are scarce compared to the computational output. One reason for this gap is the experimental difficulty of safely and controllably sourcing elements, such as sulfur, phosphorous, and iodine for depositing these materials in thin-film form. Another important obstacle to experimental realization is air stability or stability with respect to formation of the competing oxide phases. We summarize experimental demonstrations of disperse valence band materials, including synthesis strategies and common experimental challenges. We end by outlining recommendations for synthesizing p-type TCMs still absent from the literature and highlight remaining experimental barriers to be overcome.

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“…Boron phosphide was deposited on both the substrates with silicon nitride window and a plain silicon substrate, which served as reference samples for the x-ray absorption spectroscopy measurements. The CVD setup and experimental methods used in this work have been described in greater detail elsewhere [24][25][26]. The precursor gases were ultra-high purity phosphine (99.999 %) and diborane (1 % in H 2 ) in an ultra-high purity hydrogen carrier gas.…”

Section: Sample Depositionmentioning

confidence: 99%

Exploiting the P L_2,3 absorption edge for optics: spectroscopic and structural characterization of cubic boron phosphide thin films

Huber¹,

Медведев²,

Meyer-Ilse³

et al. 2016

Opt. Mater. Express

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The transmission of cubic boron phosphide (c-BP) thin films, prepared by chemical vapor deposition (CVD), was evaluated near the phosphorous L 2,3 and boron K absorption edge. The c-BP films were analyzed with transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and X-ray absorption near-edge spectroscopy (XANES), to study their structural and chemical properties. The TEM analysis reveals that c-BP initially grows in islands. The merging of the P L 2,3 , P K and B K absorption edges culminates in a sharp absorption feature starting at 130 eV, showing that c-BP can be used in applications that require a relatively transparent material in the energy range just below that absorption feature. Due to experimental constraints the samples were grown at a temperature significantly below the temperature for optimal crystal growth. XANES analysis showed that, as a result of the reduced crystal quality, the intensities of the absorption transitions are reduced compared to those in high quality crystalline reference samples. Optimizing the quality of the BP films will increase the contrast in transmission across the absorption edge. Prendergast, "Determining crystal phase purity in c-BP through x-ray absorption spectroscopy," Unpublished . 28. J. Underwood and E. Gullikson, "High-resolution, high-flux, user friendly VLS beamline at the ALS for the 50-1300 eV energy region," J. Electron Spectrosc. Relat. Phenom. 92, 265 -272 (1998). 29. E. M. Gullikson, S. Mrowka, and B. B. Kaufmann, "Recent developments in EUV reflectometry at the advanced light source," in "Emerging

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Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate

Cited by 72 publications

References 26 publications

First-principles prediction of stabilities and instabilities of compounds and alloys in the ternary B-As-P system

First-principles prediction of stabilities and instabilities of compounds and alloys in the ternary B-As-P system

Bridging the p-type transparent conductive materials gap: synthesis approaches for disperse valence band materials

Exploiting the P L_2,3 absorption edge for optics: spectroscopic and structural characterization of cubic boron phosphide thin films

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