Epoxy oxidized diamond (111)-(2 × 1) surface for nitrogen-vacancy based quantum sensors

Effect of Dopants on Σ3 (111) Grain Boundary in Diamond

“…Similarly, the single-sodium-atom storage capacity for the Σ3 Na(N-V) and Σ3 Na(Si-V) is 34.31 and 33.58 mAh g À1 , respectively. The maximum lithium storage capacity was observed in Σ3 Li(N-V) , and thus the open-circuit voltage (OCV) values are obtained by using Equation (8) OCV…”

“…[1][2][3][4][5] Among the wide-gap semiconductors, diamond stands out as the superior material, possessing remarkable electronic, optical, and thermal properties. [4][5][6][7][8][9][10] Notably, diamond exhibits a high breakdown field (106-107 V m À1 ), high carrier mobility (i.e., the electron and hole conduction carrier mobility of 2000 and 2100 cm 2 V À1 s À1 , respectively), high thermal conductivity (20 W cm À1 K À1 ), low dielectric constant of 5.7, and a band-gap value of 5.5 eV. [7,9,[11][12][13][14][15] Advancements in growth techniques for diamond films has spurred considerable interest in harnessing diamond for electronic applications.…”

Diamond surface engineering for molecular sensing with nitrogen—vacancy centers

“…189 Encouragingly, epoxy-oxidized (111) surfaces were recently predicted to have PEA of χ = 1.85 eV without generation of sub-bandgap states. 210 Moving forward, it is likely that a combination of these terminators will be required to yield both optimal PEA and reduced surface states. 189,261…”

Fluorine-terminated diamond (110) surfaces for nitrogen-vacancy quantum sensors

“…Many types of diamond surfaces, which meet the three criteria simultaneously, have been proposed theoretically based on DFT calculations. These theoretically proposed surfaces include N-terminated [32], monolayer cubic boron nitride terminated [33], and epoxy oxidized [34] diamond (111) surfaces.…”

“…Shallow NV centers are created mainly via three methods [36]: (i) in situ nitrogen delta-doping in chemical vapor deposition (CVD) diamond, (ii) nitrogen ion implantation into CVD diamond, (iii) carbon irradiation of N-doped high-pressure high-temperature (HPHT) diamond. The most common surfaces used in above three methods are diamond (100) [24,27,[37][38][39][40] and (111) [41][42][43] surfaces, and effects of various terminations of diamond (100) [30,44] and (111) [32,34] surfaces on the near-surface NV centers have been widely studied. A single NV center can also be embedded in a nanodiamond to achieve nanoscale quantum sensing [45].…”