EPR and ENDOR investigations of B acceptors in 3C-, 4H- and 6H-silicon carbide

Greulich‐Weber, S.; Feege, F.; Kalabukhova, K. N.; Лукин, С. Н.; Spaeth, J.‐M.; Adrian, Frank J.

doi:10.1088/0268-1242/13/1/009

Cited by 21 publications

(16 citation statements)

References 15 publications

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“…From the analysis of the ENDOR data presented in Table 1 it follows that the isotropic and anisotropic shfi constants, a l and b l , have opposite signs for a number of 29 Si nuclei. Different signs of the isotropic and anisotropic shfi constants for 29 Si and 13 C were also previously observed in 6H SiC doped with shallow boron acceptors and explained by the rehybridization of Si and C sp ‐orbitals due to unpaired spin density at the boron indicating that the simple point dipole–dipole approximation is not applicable for the description of the shfi behavior of shallow impurities in SiC polytypes 27 and it is necessary to integrate the matrix elements of the dipole–dipole operator on the wave functions in Eq. (3).…”

Section: Resultsmentioning

confidence: 83%

Electronic structure of the nitrogen donors in 6H SiC as studied by pulsed ENDOR and TRIPLE ENDOR spectroscopy

Савченко

Kalabukhova

Pöppl

et al. 2012

Physica Status Solidi (b)

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The nitrogen (N) donors in 6H SiC were investigated by field sweep electron spin echo (FS ESE), pulsed electron nuclear double resonance (ENDOR) and pulsed General TRIPLE ENDOR spectroscopy. The 29Si and 13C superhyperfine (shf) lines observed in the FS ESE and ENDOR spectra of N in n‐type 6H SiC were assigned by pulsed General TRIPLE resonance spectroscopy to the specific carbon (C) and silicon (Si) atoms located in the environment of N donors residing at two quasi‐cubic lattice sites (Nk1, Nk2) in 6H SiC. As a result, the largest value of the shf interaction was found with Si atoms for the N donors at the hexagonal (Nh) and quasi‐cubic site Nk1, while for Nk2 the largest value of the shf interaction was found with C atoms. It gives us the argument to consider that N substitute different lattice sites in 6H SiC lattice. The relative signs of the shf interaction (shfi) constants for Nk1 and Nk2 with 29Si and 13C nuclei located in the nearest‐neighbor, next nearest‐neighbor, and outer shells are found from the TRIPLE ENDOR spectra to be positive for C atoms and negative for Si atoms. From the comparison of the experimentally obtained shfi constants with the theory, the electronic spin‐density distribution over the 29Si and 13C nuclei located in the nearest neighbor shells of N donors has been obtained taking into account the Kohn–Luttinger interference effect. The position of the conduction band minimum along the ML‐line was determined to be at k0z/kmax = 0.2 ± 0.05.

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Section: Resultsmentioning

confidence: 83%

Electronic structure of the nitrogen donors in 6H SiC as studied by pulsed ENDOR and TRIPLE ENDOR spectroscopy

Савченко

Kalabukhova

Pöppl

et al. 2012

Physica Status Solidi (b)

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“…Moreover, in the highly compensated 15R SiC (sample B, Fig. b) four HFI lines from a boron acceptor center ( 11 B, I = 3/2, 81.17%) with S = 1/2 residing at quasicubic positions (B k1,k2 ) were detected in the FS ESE spectrum.…”

Section: Resultsmentioning

confidence: 94%

EPR, ESE, and pulsed ENDOR study of the nitrogen donors in 15R SiC grown under carbon‐rich conditions

Савченко

Kalabukhova

Shanina

et al. 2014

Physica Status Solidi (b)

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X‐band field‐sweep electron spin echo and pulsed electron nuclear double resonance (ENDOR) spectroscopy were used to study n‐type 15R SiC wafers grown under carbon (C)‐rich conditions with the aim to verify the recently proposed concept that nitrogen (N) donors substitute both carbon (C) and silicon (Si) sites and may occupy nonequivalent positions at Si sites. It was found that besides the 14N ENDOR spectra of the C substituting quasicubic “k1”, “k2”, and “k3” positions five doublet lines due to 14N nuclei at other lattice positions were observed in the ENDOR spectrum of highly compensated C‐rich n‐type 15R SiC. Three of them with the hyperfine interaction (HFI) constants 34.66, 32.20, and 29.77 MHz were attributed to the N donors substituting “k1”, “k2”, and “k3” positions at Si sites. Two other additional ENDOR spectra were explained by the presence of the C antisite (CSi) defects in C‐rich 15R SiC, which leads to the formation of CSiNC complexes with donor levels close to the conduction‐band minimum and isotropic 14N HFI constants of 21.58 and 25.94 MHz. The energy levels of N donors have been evaluated by comparing the number of ENDOR spectra observed in C‐rich 15R SiC with different degrees of compensation.

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“…The EPR spectrum consists of two EPR lines in the dark. One low intensity line with g Ќ ϭ2.0046 corresponds to shallow boron 11 B on the cubic site I k B with unresolved hyperfine structure, having C 3V symmetry at temperatures higher than 50 K. 8 The second line, I R , with isotropic with g ʈ ϭg Ќ ϭ2.0025, completely vanished in the EPR spectrum after a short ͑4 min͒ anneal in an inert atmosphere at 1400°C, as seen in Fig. 2͑c͒.…”

Section: Methodsmentioning

confidence: 90%

Photosensitive electron paramagnetic resonance spectra in semi-insulating4HSiC crystals

et al. 2001

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Photosensitive electron paramagnetic resonance ͑EPR͒ investigations of unintentionally doped, semiinsulating ͑s.i.͒ 4H-SiC have been made at 37 GHz and 77 K including photoexcitation and photoquenching experiments. In the dark the EPR spectrum consists of a low intensity line due to boron on the cubic lattice site and an EPR line with isotropic g factor g ʈ ϭg Ќ ϭ2.0025. During illumination with ultraviolet light the EPR lines due to boron on the hexagonal site and nitrogen on the cubic site appear and persist after the illumination is removed, showing very small recombination rates of photocreated electrons and holes at Tϭ77 K. During and after illumination with sub-band gap, visible light an additional, previously unreported, line, I p , appears with g ʈ ϭ2.0048 and g Ќ ϭ2.0030. Studies of the spectral dependencies of the photoquenching process in 4H-SiC after excitation with above band gap light suggest that the I P line is due to the as yet unidentified deep level located at E C Ϫ1.1 eV, which pins the Fermi level in this sample. A model for trapping and recombination in semi-insulating 4H-SiC without detectable concentrations of vanadium is presented.

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EPR and ENDOR investigations of B acceptors in 3C-, 4H- and 6H-silicon carbide

Cited by 21 publications

References 15 publications

Electronic structure of the nitrogen donors in 6H SiC as studied by pulsed ENDOR and TRIPLE ENDOR spectroscopy

Electronic structure of the nitrogen donors in 6H SiC as studied by pulsed ENDOR and TRIPLE ENDOR spectroscopy

EPR, ESE, and pulsed ENDOR study of the nitrogen donors in 15R SiC grown under carbon‐rich conditions

Photosensitive electron paramagnetic resonance spectra in semi-insulating4HSiC crystals

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