EPR spectrum of BiF6=

Boate, A. R.

doi:10.1063/1.435372

Cited by 8 publications

(3 citation statements)

References 10 publications

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“…However, the A values correspond to only an occupation of ϳ25% of the 6s orbital, 15 as was derived from comparison with calculated values 29 of the hf interaction in atomic bismuth, A 6s = 77 GHz. ͑A case of localization near 50%, with A = 36.02 GHz, has been reported 30 for Bi 4+ in CsAsF 6 .͒ In the present case, up to ϳ75% of the hole is thought to be spread over the surrounding ions, which are the four nearestneighbor O 2− forming a tetrahedron and around them shells of substitutional Bi 3+ ions. If some degree of delocalization over the bismuth neighbors is assumed, this should lead to an unresolved hf broadening of the EPR lines due to spin density in the 6s orbital of these ions.…”

supporting

confidence: 49%

High-frequency electron paramagnetic resonance of the hole-trapped antisite bismuth center in photorefractive bismuth sillenite crystals

2009

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The hole-trapped antisite bismuth center has been directly observed by W-band ͑94 GHz͒ electron paramagnetic resonance ͑EPR͒ in the series of sillenite crystals, Bi 12 MO 20 ͑M = Ge, Si, Ti, denoted as BMO͒, either nondoped or doped with transition ions ͑Cr, Cu, Ru, Ce͒. Blue light illumination influences the EPR intensity in most crystals, while in nondoped Bi 12 GeO 20 and Bi 12 SiO 20 the signals only appear upon illumination. The spectra can be attributed to a single species and no anisotropy could be detected eliminating any significant deviation from tetrahedral symmetry due to a perturbing defect in the near neighborhood or to static lattice distortion. The large and isotropic hyperfine parameter, in good agreement with previous optically detected magnetic-resonance measurements ͓Phys. Rev. B 47, 5638 ͑1993͔͒, reveals that only ϳ25% of the hole is in the Bi 6s 1 orbital, by delocalization mainly to the neighboring oxygen ions, with extremely small spin densities on the surrounding Bi 3+ lattice ions as derived from the EPR linewidths. The parameter variations between the three crystalline hosts are very small, showing a near-identical degree of delocalization of the trapped hole.

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supporting

confidence: 49%

High-frequency electron paramagnetic resonance of the hole-trapped antisite bismuth center in photorefractive bismuth sillenite crystals

2009

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“…As one can see, the simulated two 209 Bi HF structure components perfectly correspond to the experimentally detected resonances. However, these spin‐Hamiltonian parameters are completely inconsistent with the theoretically predicted values g ≈ 2 and Fermi contact term a = 77530 MHz as well as with previously reported g = 2.0134, and A = 36020 MHz determined for the Bi 4+ in CsAsF 6 . According to the data in Ref.…”

Section: Resultscontrasting

confidence: 80%

“…[92], where Bi 4þ centers were found in sillenite crystals, the HF constants obtained were approximately two times smaller as compared to Ref. [91]. Taking into account such a great variation (2-4 times) among HF constant values discussed above, one may conclude the strong dependence on the ligand surroundings where the Bi center is placed.…”

Section: Bi 4þmentioning

confidence: 61%

Luminescence and photo‐thermally stimulated defect‐creation processes in Bi³⁺‐doped single crystals of lead tungstate

Buryi

Boháček

Chernenko

et al. 2016

Physica Status Solidi (b)

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For the first time, photoluminescence of PbWO 4 :Bi crystals with different bismuth contents is studied by the time-resolved spectroscopy methods at 4.2-300 K. Photo-thermally stimulated processes of electron and hole centers creation under selective UV irradiation of the crystal in the 3-5 eV energy range and the 4.2-200 K temperature range are clarified, and the optically created electron and hole centers are identified by the thermally stimulated luminescence and electron spin resonance methods. The 2.2 eV emission of PbWO 4 :Bi crystals, excited in the Bi 3þ -related absorption band overlapped with the exciton absorption band, is shown to be of an excitonic origin and is suggested to arise from the excitons of two types localized around two different Bi 3þ -related centers.No emission, arising from the electron transitions between the energy levels of Bi 3þ ions, is observed. Photoexcitation of PbWO 4 :Bi crystals in the Bi 3þ -related absorption region results also in the creation of electron and hole centers. Three new paramagnetic centers are identified: (i) two holes trapped at two regular oxygen ions located close to a Bi 3þ ion and a lead vacancy V Pb (the {2O -À Bi 3þ À V Pb }-type hole centers); (ii) Bi 4þ centers; and (iii) the O À -type hole centers. The concentration of single (non-compensated) oxygen and lead vacancies as traps for electrons and holes, respectively, is found to be small. The processes resulting in the appearance of the Bi 3þ -related localized exciton emission and in the creation of Bi-related electron and hole centers are discussed.

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Spectroscopy of the ns¹‐Centers in Ionic Crystals

Nistor

Schoemaker

Ursu

1994

Physica Status Solidi (b)

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EPR spectrum of BiF6=

Cited by 8 publications

References 10 publications

High-frequency electron paramagnetic resonance of the hole-trapped antisite bismuth center in photorefractive bismuth sillenite crystals

High-frequency electron paramagnetic resonance of the hole-trapped antisite bismuth center in photorefractive bismuth sillenite crystals

Luminescence and photo‐thermally stimulated defect‐creation processes in Bi³⁺‐doped single crystals of lead tungstate

Spectroscopy of the ns¹‐Centers in Ionic Crystals

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EPR spectrum of BiF6=

Cited by 8 publications

References 10 publications

High-frequency electron paramagnetic resonance of the hole-trapped antisite bismuth center in photorefractive bismuth sillenite crystals

High-frequency electron paramagnetic resonance of the hole-trapped antisite bismuth center in photorefractive bismuth sillenite crystals

Luminescence and photo‐thermally stimulated defect‐creation processes in Bi3+‐doped single crystals of lead tungstate

Spectroscopy of the ns1‐Centers in Ionic Crystals

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Luminescence and photo‐thermally stimulated defect‐creation processes in Bi³⁺‐doped single crystals of lead tungstate

Spectroscopy of the ns¹‐Centers in Ionic Crystals