Equal Rate and Anisotropic Reactive Ion Etching of GaAs / AlGaAs Heterostructures in SiCl4 Plasma

Salimian, S.; Cooper, Christopher B.

doi:10.1149/1.2097394

Cited by 19 publications

(3 citation statements)

References 12 publications

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“…Figure 2 shows the etch rates for GaAs and Al 0.3 Ga 0.7 As are the same within experimental error for this plasma chemistry. This has been reported previously under higher pressure reactive ion etching conditions, 33 and at much lower microwave powers ͑250 W͒ in an ECR system using permanent magnets. 34 The BCl 3 is known to attack aluminum oxides, and to getter water vapor in the reactor chamber, 35 thereby preventing reoxidation of the AlGaAs.…”

Section: Resultssupporting

confidence: 78%

Etching of GaAs/AlGaAs rib waveguide structures using BCl3/Cl2/N2/Ar electron cyclotron resonance

Constantine

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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An anisotropic nonselective etch for GaAs/AlGaAs rib waveguides has been developed for use under electron cyclotron resonance conditions. The plasma chemistry features BCl3 to minimize AlGaAs oxidation effects and small additions of N2 to induce sidewall protection when using photoresist masks. The fundamental mode attenuation in GaAs/AlGaAs waveguides is sensitive to the choice of both plasma chemistry and masking material, but can be reduced to ≤1 dB cm−1 for channel widths of 4–5 μm.

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Section: Resultssupporting

confidence: 78%

Etching of GaAs/AlGaAs rib waveguide structures using BCl3/Cl2/N2/Ar electron cyclotron resonance

Constantine

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…It is therefore important in plasma etching situations to consider vapor pressures. We also note that there have been reports of equirate etching of GaAs and A1GaAs in C12 RIE and reactive ion beam etching (RIBE) (26)(27)(28), so that under appropriate conditions, and particularly where atmospheric contamination is minimized, it is possible to etch Ga-and Al-containing compounds at the same rate. The case of InGaAs and AlInAs appears different, however, from that of GaAs and AIGaAs.…”

Section: Resultsmentioning

confidence: 97%

Cl2 and SiCl4 Reactive Ion Etching of In‐Based III–V Semiconductors

Pearton

Chakrabarti

Hobson

et al. 1990

J. Electrochem. Soc.

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The reactive ion etching of normalInAs , normalInSb , normalInP , normalInGaAs , and normalInAlAs in SiCl4/normalAr or Cl2/normalAr discharges was investigated as a function of the plasma parameters power density, pressure, and relative composition as well as etching time. The etch rates of all of these materials with the exception of normalInP are faster in SiCl4/normalAr in comparison to Cl2/normalAr , and show a similar dependence on power density and discharge composition. The variation of etch rates with pressure, however, are quite different for the two gas mixtures, with all of the materials going through a maximum at 60–80 mtorr for SiCl4/normalAr , while continuing to show a monotonic increase with pressure for Cl2/normalAr . The surface morphologies after RIE with either type of discharge are generally quite rough, although smooth etching can be obtained under appropriate conditions. Increased reverse bias currents are observed in Au/n‐type normalInP Schottky diodes after RIE, with higher currents for low pressure or high self‐bias etching. Photoluminescence decreases from normalInP are also observed after RIE, ranging in magnitude from 2–10 times. The depth of point defect introduction by energetic ion bombardment is limited to <200Å in normalInP for RIE at 50 mtorr and dc biases on the samples of 50V. Chlorine‐containing residues are present typically to a depth of ∼40Å on all of the material after RIE in either type of discharge. The addition of SF6 to both gas mixtures leads to a high selectivity for normalInP and normalInGaAs over normalInAlAs because of the formation of a thin involatile layer of AlF3 on the normalInAlAs .

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“…Valuable discussions with Dr. J. Heinen are gratefully acknowledged. This was Paper 737, presented at the Toronto, Ontario, Canada, Meeting of the Society, Oct. [11][12][13][14][15][16] 1992.…”

Section: Acknowledgmentsmentioning

confidence: 99%

Robust Reactive Ion Etching Processes for GaAs / AlGaAs / AlAs by Application of Statistical Concepts

Franz

1993

J. Electrochem. Soc.

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Reactive ion etching of A1GaAs/GaAs was investigated using chlorine-containing gases. We defined a remarkably stable process exhibiting very good process parameters: smooth surfaces, rectangular side walls, and good selectivity against photoresist, but almost no difference in etch rates due to a different aluminum content. These response variables depend on the process parameters RF power, total gas pressure, total gas flow, and mixing ratio of reactive to nonreactive gases. The etch rate mainly depends linearly on de-bias and the flow of BC13. The deviation from linearity for bias is attributed to the chemical part of material removal. About three quarters of the observed response variables can be explained by the chosen model. The inclination angle of the side walls which are free of redeposits is almost rectangular to the etched surfaces, which are extremely smooth. This is compared with glow discharges of neutral atoms.

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Equal Rate and Anisotropic Reactive Ion Etching of GaAs / AlGaAs Heterostructures in SiCl4 Plasma

Cited by 19 publications

References 12 publications

Etching of GaAs/AlGaAs rib waveguide structures using BCl3/Cl2/N2/Ar electron cyclotron resonance

Etching of GaAs/AlGaAs rib waveguide structures using BCl3/Cl2/N2/Ar electron cyclotron resonance

Cl2 and SiCl4 Reactive Ion Etching of In‐Based III–V Semiconductors

Robust Reactive Ion Etching Processes for GaAs / AlGaAs / AlAs by Application of Statistical Concepts

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