Equilibrium sublimation and thermodynamic properties of SnS

Wiedemeier, H.; Csillag, Frank J.

doi:10.1016/0040-6031(79)87115-4

Cited by 16 publications

(5 citation statements)

References 11 publications

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“…Sn loss is a mechanism which has been studied in kesterites, and has been associated with processes with longer dwelling times and where the Se partial pressure was low. − The poor capability of the annealing reactors to maintain high S and Se partial pressure with time due to leakage or vapor absorption in the reactor walls has also been associated with Sn loss . The evaporation of SnSe 2 occurs incongruently as represented by eqs and . Under high Se partial pressure, SnSe 2 would be stabilized as eq would proceed toward the left-hand side.…”

Section: Resultsmentioning

confidence: 99%

“…37 The evaporation of SnSe 2 occurs incongruently as represented by eqs 1 and 2. 38 Under high Se partial pressure, SnSe 2 would be stabilized as eq 1 would proceed toward the lefthand side. The decrease of the intensity of the SnSe 2 reflection indicates a decrease of the Se partial pressure in the system, similarly observed for SnS 2 by in situ Raman spectroscopy measurements.…”

Section: Methodsmentioning

confidence: 99%

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Chemistry and Dynamics of Ge in Kesterite: Toward Band-Gap-Graded Absorbers

et al. 2017

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The selenization of metallic Cu−Zn−Sn−Ge precursors is a promising route for the fabrication of low-cost and efficient kesterite thin-film solar cells. Nowadays, efficiencies of kesterite solar cells are still below 13%. For Cu(In,Ga)Se 2 solar cells, the formation of compositional gradients along the depth of the absorber layer has been demonstrated to be a key requirement for producing thin-film solar cells with conversion efficiencies above the 22% level. No clear understanding has been reached so far about how to produce these gradients in an efficient manner for kesterite compounds, but among the possible candidates, Ge arises as one of the most promising ones. In the present work, we evaluate the potential of incorporating Ge in Cu 2 ZnSnSe 4 to produce compositional gradients in kesterites. Synchrotron-based in situ energydispersive X-ray diffraction and X-ray fluorescence have been used to study the selenization of Cu−Zn−Sn−Ge metallic precursors. We propose a reaction mechanism for the incorporation of Ge atoms into the kesterite lattice after the formation of Cu 2 ZnSnSe 4 . Electron microscopy reveals that the annealing process leads to Cu 2 Zn(Sn,Ge)Se 4 absorber layers with an increase of Ge content toward the back contact with independence of the original location of Ge in the precursor layer. The effect of the Ge gradient on the optoelectronic properties of the absorber layer has been evaluated with room-temperature cathodoluminescence. The implications of the results for the development of kesterite solar cells are discussed, with the aim of encouraging new synthesis routes for compositionally graded absorbers.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Chemistry and Dynamics of Ge in Kesterite: Toward Band-Gap-Graded Absorbers

et al. 2017

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“…A full thermodynamic description of the S-Sn system has been developed using the CALPHAD approach provided with input from the phase equilibrium data in the literature and first- (Sharma and Chang, 1986) j (Moh, 1969) k (Karakhanova et al, 1966) l (Orr and Christensen, 1958) m (Pelabon and Moissan, 1906) n (Biltz, 1908) o (Biltz and Mecklenburg, 1909) p (Albers and Schol, 1961) q (Wiedemeier and Csillag, 1979) r (Anderson and Ridge, 1943)…”

Section: Discussionmentioning

confidence: 99%

Thermodynamics of the S–Sn system: Implication for synthesis of earth abundant photovoltaic absorber materials

et al. 2016

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“…The high vapor pressure of tin sulfides has been the subject of several scientific publications. [25][26][27] By mass spectrometric measurements the molecules in the gas phase could be identified as mainly SnS. 28 The sulfur rich tin sulfides SnS 2 and Sn 2 S 3 decompose firstly by desorbing sulfur and evaporating SnS at higher temperatures.…”

Section: Discussionmentioning

confidence: 99%

On the Sn loss from thin films of the material system Cu–Zn–Sn–S in high vacuum

Weber

Mainz

Schock

2010

Journal of Applied Physics

349

192

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In this paper the Sn loss from thin films of the material system Cu-Zn-Sn-S and the subsystems Cu-Sn-S and Sn-S in high vacuum is investigated. A combination of in situ x-ray diffractometry and x-ray fluorescence ͑XRF͒ at a synchrotron light source allowed identifying phases, which tend to decompose and evaporate a Sn-containing compound. On the basis of the XRF results a quantification of the Sn loss from the films during annealing experiments is presented. It can be shown that the evaporation rate from the different phases decreases according to the order SnS → Cu 2 SnS 3 → Cu 4 SnS 4 → Cu 2 ZnSnS 4 . The phase SnS is assigned as the evaporating compound. The influence of an additional inert gas component on the Sn loss and on the formation of Cu 2 ZnSnS 4 thin films is discussed.

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Equilibrium sublimation and thermodynamic properties of SnS

Cited by 16 publications

References 11 publications

Chemistry and Dynamics of Ge in Kesterite: Toward Band-Gap-Graded Absorbers

Chemistry and Dynamics of Ge in Kesterite: Toward Band-Gap-Graded Absorbers

Thermodynamics of the S–Sn system: Implication for synthesis of earth abundant photovoltaic absorber materials

On the Sn loss from thin films of the material system Cu–Zn–Sn–S in high vacuum

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