Equivalent-voltage approach for modeling low-frequency dispersive effects in microwave FETs

Santarelli, Alberto; Zucchelli, G.; Paganelli, Rudi Paolo; Vannini, G.; Filicori, F.

doi:10.1109/lmwc.2002.803148

Cited by 9 publications

(11 citation statements)

References 6 publications

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“…The -parameter characteristics, when translated into -parameters, correspond to the frequency response derived in (6) and (7), confirming the exponential nature even of those dispersion effects with very small time constants. The qualitative difference stems from the fact that a linearized large-signal model will never be as accurate as the corresponding small-signal model in a particular bias point.…”

Section: B Frequency Domainsupporting

confidence: 71%

“…The parameters and are related by the integrability condition [16], since they derive from a common current function . The right terms in (6) and (7) can easily be transformed into time domain using Fourier transformation and the Dirac pulse function . The resulting pulse responses and of the linearized drain current due to a change in controlling voltages are The equivalent circuit satisfies the initial assumption of a single-pole circuit response, i.e., (8) and (9) equal (3) and (4) for , , ,…”

Section: A Single Dispersion Source Approachmentioning

confidence: 99%

“…An empirical circuit topology often encountered combines a static and a dynamic current source via a dc-blocking capacitor [4], [5]. Another empirical approach to modeling dispersion is the use of equivalent voltage sources in the FET circuit topology [6]. More recently, GaN-based devices have gained high importance due to their power capabilities at microwave frequencies.…”

mentioning

confidence: 99%

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Multiple time constant modeling of dispersion dynamics in hetero field-effect transistors

Kallfass

Schumacher

Brazil³

2006

IEEE Trans. Microwave Theory Techn.

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Abstract-A new approach to the modeling of frequency dispersion effects encountered in the drain current characteristics of state-of-the-art hetero field-effect transistors is presented. The empirical, equivalent-circuit based model is dedicated to efficient microwave circuit design and allows for the inclusion of individual dispersion effects, taking into account their respective time constants. The proposed topology allows for small-and large-signal analysis in both the time and frequency domains. Parameter extraction and verification of the model is carried out using pulsed-I-V and dc measurements as well as microwave frequency -parameter characterization of both a GaAs pseudomorphic high electron mobility transistor (pHEMT) and an InP pHEMT technology. Finally, the model is employed in the design and realization of a GaAs pHEMT traveling-wave monolithic microwave integrated circuit. Simulation results are compared to measurements with a focus on figures of merit which are affected by frequency dispersion.Index Terms-Integrated circuit modeling, MODFETs, semiconductor device modeling.

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Section: B Frequency Domainsupporting

confidence: 71%

Section: A Single Dispersion Source Approachmentioning

confidence: 99%

mentioning

confidence: 99%

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Multiple time constant modeling of dispersion dynamics in hetero field-effect transistors

Kallfass

Schumacher

Brazil³

2006

IEEE Trans. Microwave Theory Techn.

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“…The model has been derived by doubly adopting an EV approach for taking into account both lowfrequency dispersive phenomena, due to device selfheating and charge-trapping [9], and high-frequency nonquasi-static effects, related to charge-carriers delay in rearranging the channel status [10]. Thanks to this approach, the two-port device currents may be described by:…”

Section: Gan Large-signal Modelingmentioning

confidence: 99%

“…In this article an empirical model for GaN-devices is presented, which is based on pulsed measurements of both drain current and S-parameters, besides on conventional dc and CW differential parameters. The model is based on the recently proposed equivalent-voltage (EV) concept [9,10], which is here adopted for the very first time in a two-fold and innovative way to the description of the low-frequency dispersive phenomena and the high-frequency nonquasi-static effects.…”

Section: Introductionmentioning

confidence: 99%

Nonquasi-static large-signal model of GaN FETs through an equivalent voltage approach

Santarelli¹,

Giacomo²,

Raffo³

et al. 2008

Int J RF and Microwave Comp Aid Eng

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A new empirical nonlinear model of GaN-based electron devices is presented in the article. The model takes into account low-frequency dispersion due to self-heating and charge-trapping phenomena and provides accurate predictions at frequencies where nonquasi-static effects are important. The model is based on the application of a recently proposed equivalent-voltage approach and is identified by using pulsed measurements of drain current characteristics and pulsed S-parameter sets. Full experimental validation on a GaN on SiC PHEMT is provided at both small-and large-signal operating conditions.

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Nonlinear RF device modelling in the presence of low-frequency dispersive phenomena

Filicori

Santarelli

Traverso

et al. 2005

Int J RF and Microwave Comp Aid Eng

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Theoretical and practical issues concerning the nonlinear dynamic modelling of electron devices are discussed in this article. All the different dynamic phenomena, which are important for the description of the device behaviour, are comprehensively dealt with by means of a unified mathematical derivation. In particular, both the "fast" dynamics associated with charge-storage phenomena at high operating frequencies and the "slow" dynamics of low-frequency dispersion, due to device self-heating and "charge-trapping" effects in deepbulk and surface regions, are simultaneously taken into account. The result is an empirical, technology-independent and nonquasi-static model of electron devices, suitable for a simple and reliable identification procedure and based on conventional measurements of static characteristics and bias-and frequency-dependent small-signal parameters. The model implementation in the framework of commercially available CAD tools is also outlined in this article. Experimental validation, based on a GaAs p-HEMT, is also presented.

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Equivalent-voltage approach for modeling low-frequency dispersive effects in microwave FETs

Abstract: Index Terms-Electron device modeling, empirical modeling, low-frequency dispersive effects.

Cited by 9 publications

References 6 publications

Multiple time constant modeling of dispersion dynamics in hetero field-effect transistors

Multiple time constant modeling of dispersion dynamics in hetero field-effect transistors

Nonquasi-static large-signal model of GaN FETs through an equivalent voltage approach

Nonlinear RF device modelling in the presence of low-frequency dispersive phenomena

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