Er3+- emission from organic complexes embedded in thin polymer films

Koppe, Markus; Brabec, Christoph J.; Sariciftci, Niyazi Serdar; Eichen, Yoav; Nakhmanovich, G.; Ehrenfreund, E.; Epstein, Olga; Heiß, Wolfgang

doi:10.1016/s0379-6779(00)01442-9

Cited by 12 publications

(6 citation statements)

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“…[14] Further, others have demonstrated near-IR LEDs fabricated using a blend of poly(N-vinylcarbazole) and Er(acac) 3 phen (phen = 1, 10-phenanthroline), [15] a blend of poly(dioctylfluorene-co-benzothiadiazole) and lissamine-functionalized Nd III complex, [16] or blends of poly(methyl methacrylate) or poly[2-methoxy-5-(3¢,7¢-dimethyloctyloxy)]-p-phenylenevinylene and Er III complexes. [17] Recently, Tessler, and co-workers reported that a combination of InAs±ZnSe semiconductor nanocrystals and conjugated polymers can be used to create tunable near-IR PLEDs, and these devices exhibit external quantum efficiencies approaching 0.5 %. [18] Our group has expanded its efforts directed towards using blue-emitting conjugated polymers as hosts for a variety of lanthanide complexes which serve as near-IR emitters.…”

Section: Introductionmentioning

confidence: 99%

Near‐Infrared Light‐Emitting Diodes (LEDs) Based on Poly(phenylene)/Yb‐tris(β‐Diketonate) Complexes

Kang

Harrison

Bouguettaya

et al. 2003

Adv Funct Materials

107

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Near‐infrared‐emitting electroluminescent (EL) devices using blue‐light‐emitting polymers blended with the Yb complexes Yb(DBM)3phen (DBM = dibenzoylmethane), Yb(DNM)3phen (DNM = dinaphthoylmethane), and Yb(TPP)L(OEt) (L(OEt) = [(C5H5)Co{P(O)Et2}3]–) have been studied. EL devices composed of Yb(DNM)3phen blended with PPP‐OR11 showed enhanced near‐IR output at 977 nm when compared to those fabricated with Yb(DBM)3phen/PPP‐OR11 blends. The maximum near‐IR external efficiencies of the devices with Yb(DBM)3phen and Yb(DNM)3phen are, respectively, 7 × 10–5 (at 6 V and at 0.81 mA mm–2) and 4 × 10–4 (at 7 V, and 0.74 mA mm–2). The optimal blend composition for EL device performance consisted of PPP‐OR11 blended with 10–20 mol‐% Yb(DNM)3phen. A device fabricated using Yb‐(TPP)L(OEt)/PPP‐OR11 showed significantly enhanced near‐IR output efficiency, and future efforts will focus on devices fabricated using porphyrin‐based materials.

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Section: Introductionmentioning

confidence: 99%

Near‐Infrared Light‐Emitting Diodes (LEDs) Based on Poly(phenylene)/Yb‐tris(β‐Diketonate) Complexes

Kang

Harrison

Bouguettaya

et al. 2003

Adv Funct Materials

107

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“…There have been several reports concerning room-temperature photoluminescence in polymer/Er complex systems. 3,4 However, the polymer matrix is largely composed of a linear CH chain and thus large CH quenching can occur. Therefore, a general polymer matrix is not suitable to the incorporation of an Er complex.…”

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confidence: 99%

Photoluminescence of mesoporous silica films impregnated with an erbium complex

et al. 2003

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Transparent mesoporous silica films were prepared by sol-gel spin coating on silicon wafers at room temperature. An erbium complex, erbium tris 8-hydroxyquinoline (ErQ), was homogeneously impregnated into the pores of the mesoporous silica films, and its concentration was easily controlled by using a solution immersing technique. The ErQ-impregnated mesoporous silica films show a room-temperature photoluminescence at 1.5 m.Erbium-doped material films have received growing interest over the last decade due to their multiple applications such as use in integrated lasers or amplifiers for telecommunications.1 Since planar optical amplifiers have a smaller interaction length with respect to erbiumdoped fiber amplifiers, higher erbium concentration is required to obtain a sufficient optical gain. However, high doping levels of erbium quench the fluorescence emission and reduce the performance of the amplifier. Especially, the clustering of Er 3+ ions is a main obstacle preventing concentration quenching because a silicabased inorganic matrix is fabricated by high-temperature processes such as flame hydrolysis deposition and chemical vapor deposition.2 To reduce concentration quenching, erbium ions should disperse uniformly on a molecular level. When Er 3+ ions are surrounded by bulky organic ligands, the average minimum distance between Er 3+ ions increases due to the steric hindrance. Thus, introduction of an erbium complex can be a solution to reducing concentration quenching. Er complex is generally used with a polymer matrix because of its solubility and the processing temperature. There have been several reports concerning room-temperature photoluminescence in polymer/Er complex systems.3,4 However, the polymer matrix is largely composed of a linear CH chain and thus large CH quenching can occur. Therefore, a general polymer matrix is not suitable to the incorporation of an Er complex. Theoretically, the most effective method for uniform dispersion is the periodic arrangement of erbium ions in a matrix when high doping levels of Er 3+ ions are required. Thus, we selected mesoporous materials as the host matrix. Mesoporous materials were developed for constructing a periodic pore structure, which has pores of a few nanometers in size.5 They can also be made of various inorganic components, such as silica and alumina, which have low optical losses.Recently, mesoporous materials were used for encapsulating organic dyes to prevent aggregation of the dye molecules.6 Impregnation of Er complex into mesoporous silica has some advantages over incorporation of Er complex in the matrix. First, the mesoporous silica has a periodic pore distribution such that the impregnated Er ions are expected to be uniformly dispersed. Moreover, the absorption cross section can increase compared to Er 3+ ion by doping Er complex into a low loss silica matrix.7 Although the mesoporous film is fabricated through a high-temperature process, there is no temperature restriction to impregnate Er complex because it can be impregnated by a solut...

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“…On such a basis, several erbium-containing compounds have been synthesized and characterized over the past decade, – with the aim of enhancing the near-infrared (NIR) emission and improving the physical processability and compatibility of the materials. Specifically, great attention has been paid to the investigation and engineering of the intramolecular energy transfer through the choice of specific organic ligands, as well as to reducing the quenching of the radiative emission.…”

Section: Introductionmentioning

confidence: 99%

Effects of Progressive Halogen Substitution on the Photoluminescence Properties of an Erbium−Porphyrin Complex

et al. 2010

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We have investigated the photoluminescence properties of porphyrin-based erbium and gadolinium complexes at different levels of halogen substitution. Both the intensity and the decay time of the erbium near-infrared emission correlate with the degree of the halogenation. Conversely, no clear correlation is found with the triplet-state energy levels nor with the intensity of the residual visible emission. Such findings confirm that the key role in the low efficiency of the near-infrared emission is played by the nonradiative quenching of the erbium emitting level due to the vibrational modes of the surrounding C-H bonds.

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Er3+- emission from organic complexes embedded in thin polymer films

Cited by 12 publications

References 0 publications

Near‐Infrared Light‐Emitting Diodes (LEDs) Based on Poly(phenylene)/Yb‐tris(β‐Diketonate) Complexes

Near‐Infrared Light‐Emitting Diodes (LEDs) Based on Poly(phenylene)/Yb‐tris(β‐Diketonate) Complexes

Photoluminescence of mesoporous silica films impregnated with an erbium complex

Effects of Progressive Halogen Substitution on the Photoluminescence Properties of an Erbium−Porphyrin Complex

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