Erbium-glass slab laser with transverse diode pumping

Ryabtsev, G. I.; Bogdanovich, M. V.; Enzhievskiĭ, A. I.; Teplyashin, L. L.; Klishchenko, A. P.; Pozhidaev, A. V.; Щемелев, М. А.; Ryabtsev, A. N.; Kraskovskii, A. S.; Titovets, S. N.; Yumashev, K. V.; Malyarevich, A. M.; Дымшиц, О. С.; Жилин, А. А.

doi:10.1364/jot.75.000704

Cited by 7 publications

(2 citation statements)

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“…High-power laser diode arrays (LDAs) are coming into ever wide use as compact, highly efficient sources of optical excitation for solid state lasers [1][2][3]. Reducing the energy demand by these emitters requires optimization of the parameters of the LDAs, as well as of the solid state lasers.…”

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Loss coefficient for amplified luminescence of laser diode arrays

et al. 2011

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A system of radiative transfer equations is used to calculate the loss coefficient for amplified luminescence fluxes propagating along and transverse to the cavity axis in the active layer of high-power laser diode arrays taking the spreading of charge carriers in the cladding and contact layers of InGaAs/GaAs/AlGaAs heterostructures into account. It is shown that the spreading of charge carriers leads to a significant change in the amplified luminescence flux which can contribute up to 18% to the lasing threshold of these laser diode arrays. The calculated loss coefficients can greatly simplify the determination of the amplified luminescence fluxes in laser diode arrays with an error of less that 16% and can be used to determine how much the amplified luminescence affects the power and dynamic characteristics of diode arrays.Introduction. High-power laser diode arrays (LDAs) are coming into ever wide use as compact, highly efficient sources of optical excitation for solid state lasers [1][2][3]. Reducing the energy demand by these emitters requires optimization of the parameters of the LDAs, as well as of the solid state lasers. The power of modern LDAs used as pumps is approaching 80-150 W [1, 4]. These relatively high LDA powers have been achieved by substantial increase in the length of the cavities and the total widths of the heterostructure lasing elements. In most cases of practical interest, the LDA is characterized by a relatively high area of the active layer of the laser heterostucture. Thus, it is to be expected that, in accordance with [5-10], intense fluxes of amplified luminescence should develop in the active layers of LDAs; these result in an increase in the threshold and a reduction in the laser output power. It has been shown [5, 6, 8-10] that the AL fluxes for single laser diodes (with a single emitting region, or strip contact) can be analyzed by introducing an AL loss coefficient α lum determined from the balance between emission, amplification, and absorption of spontaneous emission ]11]. The value of α lum depends on many factors, in particular, on the composition of the active layer, the geometry of the laser structure, the excitation conditions, etc. Thus, as opposed to the loss coefficient for the laser emission, finding α lum is a rather complicated task in most cases of practical importance. This paper deals with the determination of the loss coefficient for AL produced in the active layer of highpower LDAs with as many as a few hundred regions. The resulting values of α lum can be used to estimate how much AL affects the threshold, dynamic, and power properties of LDAs and to determine methods for further improvement in the characteristics of LDAs and of diode pumped solid state lasers.Propagation of Fluxes of Amplified Luminescence in LDAs. The AL characteristics of concern for the parameters of LDAs (output wavelengths 940-980 nm) used to pump solid state erbium lasers are studied here. These LDAs are generally based on InGaAs/GaAs/AlGaAs heterostructures with two quantum-dimension...

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Loss coefficient for amplified luminescence of laser diode arrays

et al. 2011

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“…Compact high efficiency diode pumped lasers are required for modern optical systems. Passive Q-switch application for laser pulse generation is preferable for portable and low power consumption laser heads [5,6]. Development and optimization of passively Q-switched lasers with specified output radiation dynamical characteristics require adequate modelling of the laser mode evolution within the cavity.…”

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Amplified spontaneous emission induced peculiarities of the passively Q-switched diode pumped erbium laser dynamics

Bogdanovich¹,

Grigor’ev²,

Kabanov³

et al. 2010

Lithuanian J. Phys.

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The influence of amplified spontaneous emission (ASE) on the dynamic characteristics of transversely diode pumped erbium-ytterbium glass laser with Co:spinel Q-switch has been investigated. ASE cavity loss coefficient for passively Q-switched laser has been determined. The dependences of ASE cavity loss coefficient on the active element length, output mirror reflection coefficient, and initial transmission of the passive Q-switch have been defined. Laser dynamics has been modelled on the basis of the rate equation set for ion population densities and photon numbers, taking into account the amplified spontaneous emission. It has been shown that ASE accounting does not influence significantly the energy and duration of the output laser pulse. Variations of the laser turn-on time and pulse repetition rate of about 5-10% have been revealed in the case of ASE taken into consideration.

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