Erbium ion implantation into LiNbO3, Al2O3, ZnO and diamond – measurement and modelling – an overview

Cajzl, Jakub; Nekvindová, Pavla; Macková, Anna; Varga, M.; Kromka, Alexander

doi:10.1039/d2cp01803a

Cited by 4 publications

(1 citation statement)

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“…The greater the cohesive energy, the more energy that is required to break the material and, therefore, the more stable the material. [21][22][23][24][25] The cohesive energy for the 3D system can be calculated following the same nomenclature used in eqn (2), however the reference state energy is replaced by the elements gaseous phase atomic energy (E i,atomic ). This was calculated by isolating an atom of type i in a 20 Å Â 20 Å Â 20 Å box and optimizing to determine the total energy.…”

Section: Thermodynamic Feasibility and Structural Stabilitymentioning

confidence: 99%

Computationally directed manipulation of cross-linked covalent organic frameworks for membrane applications

Davies,

Wenzel,

Brugger

et al. 2023

Phys. Chem. Chem. Phys.

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Section: Thermodynamic Feasibility and Structural Stabilitymentioning

confidence: 99%

Computationally directed manipulation of cross-linked covalent organic frameworks for membrane applications

Davies,

Wenzel,

Brugger

et al. 2023

Phys. Chem. Chem. Phys.

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Er:LiNbO₃ Quantum Memory Platform Optimized with Dynamic Defect Annealing

Slusar,

Azarov,

Galeckas

et al. 2024

Advanced Optical Materials

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Lithium niobate (LiNbO3) exhibits poor radiation resistance when conventionally implanted with Er at room temperature. To repair the structural disorder, high‐temperature post‐implantation anneals are typically required; however, such treatments can cause sample cracking and dopant redistribution, which are incompatible with device applications. The optimized approach is proposed by performing implants at elevated but acceptably low temperatures to in situ minimize the structural defects generated in the collision cascades, via so‐called “dynamic defect annealing”. Thus, a gradual increase in Er optical activity is shown as a function of irradiation temperature in the range of 25–450 °C, in striking correlation with a decreasing trend for the residual disorder. The impact of moderate post‐implantation anneals is also investigated by comparing the results of anneals of samples implanted at 25 °C and 450 °C. This comparison further confirms the higher optical activation of Er and lower residual structural disorder when the material is initially implanted at elevated temperatures. Based on these data, it is concluded that the use of dynamic defect annealing during the Er implantation of LiNbO3is a promising strategy for optimizing it as a quantum memory platform, resolving otherwise inevitable trade‐offs.

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IR Hidden Patterns for Security Labels

Yaroshenko,

Larin,

Syubaev

et al. 2024

J. Phys. Chem. Lett.

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Authentication of a product's originality by anticounterfeiting labels represents a crucial point toward protection against forgery. Fast and scalable fabrication methods of original labels with a high degree of protection are in high demand for the protection of valuable goods. Here, we propose a simple strategy for fabrication of hidden security tags with IR luminescent readout by the direct femtosecond laser patterning of silicon−erbium−silicon sandwiched thin films. The choice of laser processing parameters makes possible the creation of random or quasi-regular self-organized surface nanotextures. The controlled laser-driven oxidation accompanying this process provides simultaneous regulation of the film's optical properties and spontaneous emission yield of the embedded Er atoms. The regimes are detected when optically similar patterned areas demonstrate different Er emission intensities, allowing us to create hidden security tags with facile readout at the C-band telecommunication wavelengths. The obtained results take another step toward the application of IR-luminescent erbium-based anticounterfeiting labels for covert and/or forensic security levels.

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Erbium ion implantation into LiNbO₃, Al₂O₃, ZnO and diamond – measurement and modelling – an overview

Abstract: The presented overview deals with an experimental and theoretical study of erbium ions incorporated in crystal materials of LiNbO3, Al2O3, ZnO and diamond for use in photonics and optoelectronics.

Cited by 4 publications

References 109 publications

Computationally directed manipulation of cross-linked covalent organic frameworks for membrane applications

Computationally directed manipulation of cross-linked covalent organic frameworks for membrane applications

Er:LiNbO₃ Quantum Memory Platform Optimized with Dynamic Defect Annealing

IR Hidden Patterns for Security Labels

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Erbium ion implantation into LiNbO3, Al2O3, ZnO and diamond – measurement and modelling – an overview

Abstract: The presented overview deals with an experimental and theoretical study of erbium ions incorporated in crystal materials of LiNbO3, Al2O3, ZnO and diamond for use in photonics and optoelectronics.

Cited by 4 publications

References 109 publications

Computationally directed manipulation of cross-linked covalent organic frameworks for membrane applications

Computationally directed manipulation of cross-linked covalent organic frameworks for membrane applications

Er:LiNbO3 Quantum Memory Platform Optimized with Dynamic Defect Annealing

IR Hidden Patterns for Security Labels

Contact Info

Product

Resources

About

Erbium ion implantation into LiNbO₃, Al₂O₃, ZnO and diamond – measurement and modelling – an overview

Er:LiNbO₃ Quantum Memory Platform Optimized with Dynamic Defect Annealing