Erbium-ytterbium codoped waveguide amplifier fabricated with solution-processable complex

Chen, Cong; Zhang, Dan; Li, Tong; Zhang, Daming; Song, Limei; Zhen, Zhen

doi:10.1063/1.3077152

Cited by 41 publications

(27 citation statements)

References 23 publications

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“…Amorphous hosts can also be sub-divided into two groups of materials: polymers and glasses (see Table 4). Polymer waveguides are of interest due to their low cost and straight-forward integration with other materials and have shown promise as rare-earth hosts [107][108][109][110][111][112][113]. However, the thermal stability of such materials is poor and the host material itself often exhibits additional absorption lines (colour centers).…”

Section: Amorphous Vs Crystalline Hostsmentioning

confidence: 99%

Erbium‐doped integrated waveguide amplifiers and lasers

Bradley

Pollnau

2010

Laser & Photonics Reviews

327

161

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Erbium-doped fiber devices have been extraordinarily successful due to their broad optical gain around 1.5-1.6 μm. Er-doped fiber amplifiers enable efficient, stable amplification of high-speed, wavelength-division-multiplexed signals, thus continue to dominate as part of the backbone of longhaul telecommunications networks. At the same time, Er-doped fiber lasers see many applications in telecommunications as well as in biomedical and sensing environments. Over the last 20 years significant efforts have been made to bring these advantages to the chip level. Device integration decreases the overall size and cost and potentially allows for the combination of many functions on a single tiny chip. Besides technological issues connected to the shorter device lengths and correspondingly higher Er concentrations required for high gain, the choice of appropriate host material as well as many design issues come into play in such devices. In this contribution the important developments in the field of Er-doped integrated waveguide amplifiers and lasers are reviewed and current and future potential applications are explored. The vision of integrating such Er-doped gain devices with other, passive materials platforms, such as silicon photonics, is discussed.

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Section: Amorphous Vs Crystalline Hostsmentioning

confidence: 99%

Erbium‐doped integrated waveguide amplifiers and lasers

Bradley

Pollnau

2010

Laser & Photonics Reviews

327

161

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“…A 15-mm long waveguide cladded with an SU-8 layer yielded an optical gain of 5.2 dB for a signal power of 0.3 mW and a pump power of 128.3 mW. As for the PMMA-GMA cladded sources, an amplifier with a length of 12 mm produced an optical gain of 6.5 dB for an input signal power and a pump power of 1 mW and 75 mW, respectively [251].…”

Section: Rare-earth-ion-activated Polymer Waveguide Amplifiersmentioning

confidence: 99%

“…There are a number of reports on demonstration of optical gain in polymer waveguides doped with different rareearth ions, including europium (Eu 3+ ) [244][245][246][247][248], samarium (Sm 3+ ) [249], erbium (Er 3+ ) or erbium/ytterbium (Er 3+ /Yb 3+ ) [61,65,250,251] and neodymium (Nd 3+ ) [51,241,[252][253][254][255].…”

Section: Rare-earth-ion-activated Polymer Waveguide Amplifiersmentioning

confidence: 99%

Organic solid‐state integrated amplifiers and lasers

Grivas

Pollnau

2012

Laser & Photonics Reviews

212

202

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Solid-state organic amplifiers and lasers are attractive for hybrid integration due to their compatibility with different material platforms, straightforward processing, and possibility to optimize easily their optical and electronic properties by molecular engineering. Advances in the gain medium design and synthesis in combination with new resonator architectures led to tremendous improvements in temporal and spectral properties, lifetime stability, gains produced and operating threshold powers, which triggered interest in their use for a broad range of integrated photonic applications. In this contribution, the current state-of-the-art in the field of organic solid-state amplifiers and lasers is reviewed from the aspects of fabrication technology, gain materials, and device performance. Furthermore, examples of the progress of this technology from a laboratory curiosity to one that demonstrates practical integrated photonic applications are highlighted. An outlook is also provided on research areas and applications that are likely to shape further developments of this technology. (Figure reprinted from [296],

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“…The envisioned material is an Er-doped polymer 3 , this kind of structures have been already successfully used in amplification 4 with optical gain of 5.2 dB at a wavelength of 1550 nm in a 15-mm-long waveguide (980 nm pump) 5 . Polymers are interesting materials to use as optical waveguide materials as their synthesis and processing is quite well developed.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the slot mode enhancement of erbium-doped polymer silicon on insulator waveguide amplifiers

et al. 2014

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Erbium doped Polymer hybrid slot waveguide amplifier at λ =1530 nm with a 1480 nm pumping wavelength is investigated. Both, the waveguide structure parameters and the Er 3+ -doped polymer intrinsic spectroscopic parameters are swept to analyze the gain contribution sensitivities. Assuming moderate optical transmission losses of 10dB/cm, the predicted net gain typically varies from 0 to 10dB. Due to the excited state absorption (ESA) mechanism in the high intensity slot region, the signal gain is significantly suppressed for large pumping power, leading to the counterintuitive result that there is an optimum pump power value in the sub-100 mW range. The effect of the ion concentration and the ion-ion interaction is considered giving different adjusted parameters in every particular case.

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Erbium-ytterbium codoped waveguide amplifier fabricated with solution-processable complex

Cited by 41 publications

References 23 publications

Erbium‐doped integrated waveguide amplifiers and lasers

Erbium‐doped integrated waveguide amplifiers and lasers

Organic solid‐state integrated amplifiers and lasers

Investigation of the slot mode enhancement of erbium-doped polymer silicon on insulator waveguide amplifiers

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