Ermittlung des Spannungsintensitätsfaktors K<sub>I</sub> mit dem spannungsoptischen Verfahren

Raman microprobe spectroscopy was used to measure the crack tip stress distribution in single-crystalline silicon using a wedge-loaded double cantilever beam (dcb) specimen. The wedge was advanced until the crack just propagated. After the crack arrested, the stresses were measured between 3 and 20 pm directly ahead of the crack. An average value of -0.43 was obtained for the slope of log stress vs log distance from the crack tip, rather than the theoretical value of -0.5. The value of K1 was determined from (1) the intercept of this curve and (2) the slope of stress against 1 / 6 . The values were in good agreement. The average experimental value of KI was determined to be 0.71 MPa.ml", compared to literature values for the K l c ranging from silicon of 0.8 to 0.94 MPa.ml". The value measured with the Raman is the arrest value of KI and is expected to be lower from kinetic energy considerations associated with wedge-loaded dcb specimens. [

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Ermittlung des Spannungsintensitätsfaktors K_I mit dem spannungsoptischen Verfahren

Abstract: Es wird ein Überblick über die Methoden zur spannungsoptischen Ermittlung des Spannungsintensitätsfaktors KI gegeben. Hierbei werden Gültigkeitsbereich und Genauigkeit dieser Methoden diskutiert.

Cited by 2 publications

References 42 publications

Stress intensity factor determination from isochromatic fringe patterns—A review

Stress intensity factor determination from isochromatic fringe patterns—A review

Direct Measurement of Crack Tip Stresses

Contact Info

Product

Resources

About

Ermittlung des Spannungsintensitätsfaktors KI mit dem spannungsoptischen Verfahren

Abstract: Es wird ein Überblick über die Methoden zur spannungsoptischen Ermittlung des Spannungsintensitätsfaktors KI gegeben. Hierbei werden Gültigkeitsbereich und Genauigkeit dieser Methoden diskutiert.

Cited by 2 publications

References 42 publications

Stress intensity factor determination from isochromatic fringe patterns—A review

Stress intensity factor determination from isochromatic fringe patterns—A review

Direct Measurement of Crack Tip Stresses

Contact Info

Product

Resources

About

Ermittlung des Spannungsintensitätsfaktors K_I mit dem spannungsoptischen Verfahren