Erosion of graphite and graphite compounds under oxygen gas and light ion irradiation

Begrambekov, L. B.; Vergazov, S. V.; Zakharov, A.M.; Morochev, M.A.

doi:10.1016/0168-583x(94)95600-6

Cited by 6 publications

(2 citation statements)

References 4 publications

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“…The (1000) surface of graphite is peculiar in that carbon atoms are arranged in planar layers with strong covalent bonding within planes parallel to the surface, but only weak residual bonding between the planes. Many aspects of ion irradiation induced damage on graphite surfaces have been the subject of much interest recently [1][2][3][4][5][6]. Despite the extensive experimental work it is still, to a large extent, unclear what atomic structures and formation mechanisms are the source of observed defect and damage structures.…”

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Formation of Ion Irradiation Induced Small-Scale Defects on Graphite Surfaces

1996

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We use molecular dynamics simulations and ab initio calculations to study the structures and formation probabilities of isolated surface defects produced by ion irradiation of (1000) graphite. We improve the conventionally used Tersoff potential [J. Tersoff, Phys. Rev. Lett. 61, 2879 (1988)] to realistically describe interlayer forces in graphite and high-energy processes in carbon. We identify three defect structures which correspond to experimentally observed hillocks on graphite surfaces, and examine their formation at different implantation energies. [S0031-9007(96)00757-0]

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Formation of Ion Irradiation Induced Small-Scale Defects on Graphite Surfaces

1996

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“…Appearance of cone structures on ion bombarded RGT reported in [16] as well point to the surface enrichment of the dopant. Ti atoms concentrating at the graphitic grain boundaries and at other diffusion passes slow down the diffusion of the implanted hydrogen atoms to the surface and its reemission.…”

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confidence: 91%

TDS Investigation of Hydrogen Retention in Graphites and Carbon Based Materials

et al. 2004

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Retention of 200 eV H þ 2 ions ðE i ¼ 100 eV=nuclÞ in fine grain graphite of MPG-8 type, graphite of RGT type ðC þ 3:5% TiCÞ; CFC of N11 type, crystalline boron carbide and hydrocarbon films was investigated by means of thermal desorption spectrometry. The implantation dose varied between 5 Â 10 21 and 6 Â 10 24 H=m 2 : Temperature of the samples during implantation was 470 AE 10 K: The measurements showed that hydrogen retention at high fluences increased in the following order: B 4 C; MPG-8 and CFC, RGT, CHfilms. The main part of trapped hydrogen and CH 4 molecules are collected in deep layers beyond the kinetic ion range.Slowing down of the retention rate in graphites at fluences around 5 Â 10 23 H=m 2 may account for the approach of the hydrogen trapping rate and the rate of the hydrogen release from the sputtered surface. Hydrogen retention in B 4 C saturates near the fluence 10 24 H=m 2 : Saturation of the CH 4 release was observed in all graphites and in boron carbide at fluences around 10 24 H=m 2 : The features of the hydrogen retention in deep layers of materials under low energy ion implantation are discussed.Ã

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