Errata: “Atomic layer etching of metals with anisotropy, specificity, and selectivity” [J. Vac. Sci. Technol. A 38, 043005 (2020)]

Sang, Xia; Xia, Yantao; Sautet, Philippe; Chang, Jane P.

doi:10.1116/6.0000759

Cited by 2 publications

(2 citation statements)

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“…With the aim of gaining a deeper understanding of vapor‐phase deposition of PPy, we carried out XPS analysis of PPy‐coated scaffolds prepared under both vapor‐ and liquid‐phase polymerization (Figure 1f; Table S1, Supporting Information). The attenuation of the Si 2p signal upon polymer deposition is indicative of the thickness of the PPy deposited, according to a standard uniform overlayer model [ 96–98 ] ; the variability of the Si 2p signal over different measurement points gives an indication of the spatial homogeneity of the coating polymer. Upon vapor‐phase polymerization a steady increase of the Si 2p signal attenuation is recorded from 1 to 8 h (up to 35%), confirming an increase of the PPy layer thickness that agrees with spectroscopic data in Figure 1b.…”

Section: Resultsmentioning

confidence: 99%

Vapor‐Phase Synthesis of Molecularly Imprinted Polymers on Nanostructured Materials at Room‐Temperature

Mazzotta

Giulio

Mariani

et al. 2023

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Molecularly imprinted polymers (MIPs) have recently emerged as robust and versatile artificial receptors. MIP synthesis is carried out in liquid phase and optimized on planar surfaces. Application of MIPs to nanostructured materials is challenging due to diffusion‐limited transport of monomers within the nanomaterial recesses, especially when the aspect ratio is >10. Here, the room temperature vapor‐phase synthesis of MIPs in nanostructured materials is reported. The vapor phase synthesis leverages a >1000‐fold increase in the diffusion coefficient of monomers in vapor phase, compared to liquid phase, to relax diffusion‐limited transport and enable the controlled synthesis of MIPs also in nanostructures with high aspect ratio. As proof‐of‐concept application, pyrrole is used as the functional monomer thanks to its large exploitation in MIP preparation; nanostructured porous silicon oxide (PSiO2) is chosen to assess the vapor‐phase deposition of PPy‐based MIP in nanostructures with aspect ratio >100; human hemoglobin (HHb) is selected as the target molecule for the preparation of a MIP‐based PSiO2 optical sensor. High sensitivity and selectivity, low detection limit, high stability and reusability are achieved in label‐free optical detection of HHb, also in human plasma and artificial serum. The proposed vapor‐phase synthesis of MIPs is immediately transferable to other nanomaterials, transducers, and proteins.

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Section: Resultsmentioning

confidence: 99%

Vapor‐Phase Synthesis of Molecularly Imprinted Polymers on Nanostructured Materials at Room‐Temperature

Mazzotta

Giulio

Mariani

et al. 2023

Small

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“…Etching study on Cr has been reported [20], and for the etching of Cr, a precise etching control was performed using ion milling or atomic layer etching (ALE), but Cr also has a low extinction coefficient for the next generation EUV absorber. Recently, a research on the etching of Ni, a material with a higher extinction coefficient than Tabased materials, has been investigated through a plasmathermal ALE method, and a precisely control of Ni etching and anisotropic etching by repeating oxidation and a ligand exchange have been reported [21,22]. However, there are no sufficient studies on the etching of EUV materials with high absorption coefficients applicable to the next generation EUV mask such as precise etching characteristics, the evaluation of etch selectivity with the capping layer, the degree of damage to the capping layer during the etch process, etc.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer etching of Sn by surface modification with H and Cl radicals

Kim¹,

Jang²,

Kim³

et al. 2022

Nanotechnology

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Sn is the one of the materials that can be used for next generation extreme ultraviolet (EUV) mask material having a high absorption coefficient and, for the fabrication of the next generation EUV mask, a precise etching of Sn is required. In this study, the atomic layer etching (ALE) process was performed for the precise etch thickness control and low damage etching of Sn by the formation SnHxCly compounds on the Sn surface using with H and Cl radicals during the adsorption step and by the removal of the compound using Ar+ ions with a controlled energy during the desorption step. Through this process, optimized ALE conditions with different H/Cl radical combinations that can etch Sn at ~2.6 Å/cycle were identified with a high etch selectivity over Ru which can be used as the capping layer of the EUV mask. In addition, it was confirmed that not only the Sn but also Ru showed almost no physical and chemical damage during the Sn ALE process.

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Errata: “Atomic layer etching of metals with anisotropy, specificity, and selectivity” [J. Vac. Sci. Technol. A 38, 043005 (2020)]

Cited by 2 publications

References 0 publications

Vapor‐Phase Synthesis of Molecularly Imprinted Polymers on Nanostructured Materials at Room‐Temperature

Vapor‐Phase Synthesis of Molecularly Imprinted Polymers on Nanostructured Materials at Room‐Temperature

Atomic layer etching of Sn by surface modification with H and Cl radicals

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