Erratum: ‘‘A controllable mechanism of forming extremely low-resistance nonalloyed ohmic contacts to group III-V compound semiconductors’’ [J. Appl. Phys. 74, 7344 (1993)]

Abstract

A controllable mechanism of forming extremely low-resistance nonalloyed ohmic contacts to group III-V compound semiconductors

Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs

“…A 4.3 ϫ 10 −8 ⍀ cm 2 contact resistivity to n-InGaAs was achieved with Ti/ Pt/ Au layers by Ar + sputter cleaning the semiconductor surface before contact deposition. 6 Ti contacts diffuse 7 into InGaAs at high temperatures and hence can impair reliability, 8 particularly in high-f max devices, where semiconductor junctions typically lie within 20-30 nm of the contact surface. While ex situ Ohmic contacts can provide low resistivity, reproducibility is often problematic.…”

Low resistance Ti/Pt/Au ohmic contacts to p-type GaN

“…Ti/Pt/Au ohmic contacts have been studied before for other compound semiconductors, such as n-type GaAs and p-type InGaP. 12,13 Ti/Pt/Au were also candidates for thermally stable contacts on degenerately doped n-type InN and In x Ga 1Ϫx N. 14,15 To our knowledge, there is no published study on the use of Ti/Pt/Au as p-GaN ohmic contact metallization.…”

Investigation of p-side contact layers for II–VI compound semiconductor optical devices fabricated on InP substrates by MBE

“…Here, the doping level of the p-InGaAs layer was 2 Â 10 19 cm À 3 , which was the same as one in our case. In addition, the R c in the p-InGaAs case decreased to 7.5 Â 10 À 6 Ω cm 2 by increasing the doping level of the contact layer to 1 Â 10 20 cm À 3 , and it decreased to 4.8 Â 10 À 8 Ω cm 2 by annealing [17]. Therefore, we expect that the R c in our case also can be decreased furthermore by increasing the doping level and annealing.…”

“…On the other hand, the above result is comparable to reported values for other semiconductor/metal contacts. For example, the R c value in the case of p-InGaAs contact layers and Au/Pt/Ti electrodes with no annealing after the metal deposition was 8.3 Â 10 À 5 Ω cm 2 [17]. Here, the doping level of the p-InGaAs layer was 2 Â 10 19 cm À 3 , which was the same as one in our case.…”