Erratum: Degradation of Boron-Doped Czochralski-Grown Silicon Solar Cells [Phys. Rev. Lett.,<b>93</b>, 055504 (2004)]

Adey, J; Jones, R.; Palmer, D.W.; Briddon, P.R.; Öberg, Sven

doi:10.1103/physrevlett.93.169904

Cited by 21 publications

(33 citation statements)

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“…(16) and (17), can be deduced by fitting the diffusion equation to the dislocation unlocking data [4,9,17]. Oxygen transport to the dislocation is treated in a geometry where the dislocation is parallel to a co-ordinate system's z-axis.…”

Section: Modellingmentioning

confidence: 99%

“…Additionally, a SIMS investigation by Heck et al shows that oxygen transport is enhanced in Cz-Si into which boron had been diffused [15]. A theoretical investigation by Adey et al predicts that the activation energy for oxygen dimer diffusion is 0.86 eV in highly doped p-type material, compared with 1.33 eV in lowdoped material [16]. Dislocations in materials can be immobilized by certain impurities, including oxygen.…”

Section: Introductionmentioning

confidence: 96%

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Oxygen transport in Czochralski silicon investigated by dislocation locking experiments

Murphy¹,

Senkader²,

Falster³

et al. 2006

Materials Science and Engineering: B

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Section: Modellingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 96%

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments

Murphy¹,

Senkader²,

Falster³

et al. 2006

Materials Science and Engineering: B

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“…Although this effect has been known for some time it is only recently that the mechanism has been explained as being due to the formation of a metastable boron-oxygen complex 12,13 . The effect can be reversed by thermal treatments 14 and avoided by doping with gallium instead of boron or reducing the oxygen content of the silicon.…”

Section: Basic Conceptsmentioning

confidence: 99%

Photovoltaic Power Generation: The Impact of Nano-Materials

Peaker¹,

Маркевич

2008

MSF

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Solar power is seen by many as a solution to the world’s energy problems. The earth receives 1.7x1017W from the sun compared to a total electricity generation capacity of 4.6x1012W (OECD prediction for 2010). However the average power density is low with a daytime average over the earth of 680Wm-2. This makes centralised generation problematic but distributed photoelectric generation by domestic and commercial users is a rapidly developing market. However typical commercially available modules have an energy conversion efficiency of less than 12%. Silicon cells with 24% efficiency have been produced in the lab while multi-junction tandem cells using different semiconductor materials (GaInAs, GaInP and Ge) to absorb different parts of the sun’s spectrum have reached 40%. This chapter describes some of the materials and device achievements so far and looks at possible ways in which higher efficiencies might be achieved with particular emphasis on nano-materials to use more of the solar spectrum efficiently. The possibility of using quantum slicing and multiple exciton generation to make more efficient use of high energy photons is considered and impurity band generation as a possible route to use low energy photons. One of the greatest challenges is to do this cheaply using semiconductors made from non-toxic abundant elements.

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“…1 are the two key centers that contribute to LID in crystalline Si. [3][4][5] The goal of this study is to develop an accelerated light-induced degradation (ALID) procedure for fast defect transformation to preselected states corresponding to different recombination activities. Three of these states are listed in Table I.…”

Section: Introductionmentioning

confidence: 99%

Accelerated Light-Induced Degradation (ALID) for Monitoring of Defects in PV Silicon Wafers and Solar Cells

Wilson¹,

Edelman²,

Savtchouk³

et al. 2010

Journal of Elec Materi

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In crystalline silicon, above-bandgap illumination can transform defects into strong recombination centers, degrading minority-carrier lifetime and solar cell efficiency. This light-induced degradation (LID) is due primarily to boronoxygen and iron-boron defects, and can be reversed using thermal treatments that are distinctly different for each type of defect. Combining illumination and thermal treatment, we have designed an accelerated light-induced degradation (ALID) cycle that, within minutes, transforms defects into the distinct states needed to isolate individual contributions from boron-oxygen dimers (BO 2i ) and interstitial iron (Fe i ). In this cycle, the concentrations of BO 2i and Fe i are determined using surface photovoltage (SPV) diffusion length measurement. The ALID cycle uses reversible defect reactions and gives very good repeatability of wafer-scale mapping of BO 2i and Fe i in photovoltaic (PV) wafers and final solar cells.

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Erratum: Degradation of Boron-Doped Czochralski-Grown Silicon Solar Cells [Phys. Rev. Lett.,93, 055504 (2004)]

Cited by 21 publications

References 0 publications

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments

Photovoltaic Power Generation: The Impact of Nano-Materials

Accelerated Light-Induced Degradation (ALID) for Monitoring of Defects in PV Silicon Wafers and Solar Cells

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