Erratum: Excitation of a Magnetic Multilayer by an Electric Current [Phys. Rev. Lett. 80, 4281 (1998)]

Tsoi, Maxim; Jansen, A. G. M.; Bass, J.; Chiang, Wen‐C.; Seck, M.; Tsoǐ, V. S.; Wyder, P.

doi:10.1103/physrevlett.81.493

Cited by 139 publications

(174 citation statements)

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“…This phenomenon, known as spin-transfer torque, has since been extensively studied both theoretically [23][24][25][26][27][28][29] and experimentally. [30][31][32][33][34][35] A demonstration of the spin-transfer phenomenon is the current-induced magnetic switching ͑CIMS͒, which has now been confirmed in numerous experiments in MTJs. 36,37 Thus, CIMS provides a powerful new tool for the study of spin transport in magnetic nanostructures.…”

Section: Introductionmentioning

confidence: 99%

Spin-transfer torque in magnetic tunnel junctions

et al. 2009

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We present a theoretical study of the spin-transfer torque vector and the tunneling magnetoresistance ͑TMR͒ for symmetric magnetic tunnel junctions ͑MTJ͒ using the single-band tight-binding model and the nonequilibrium Keldysh formalism. We provide a comprehensive analysis of the effect of band filling and exchange splitting of the FM leads on the bias behavior of the spin-transfer component, T ʈ , in the plane containing the magnetizations of the two magnetic layers, and the fieldlike component, T Ќ , perpendicular to this plane. We demonstrate that both components of the spin torque and the TMR can exhibit a wide range of interesting and unusual bias behavior. We show that T ʈ ͑V͒ satisfies an expression involving the difference in spin currents between the ferromagnetic ͑FM͒ and antiferromagnetic ͑AF͒ configurations, which is general and independent of the details of the electronic structure. The spin current for the FM ͑AF͒ alignment is shown to have a linear ͑quadratic͒ bias dependence, whose origin lies in the symmetric ͑asymmetric͒ nature of the barrier. On the other hand, the bias dependence of T Ќ is quadratic with d 2 T Ќ / dV 2 Ͻ 0, and it can change sign at finite bias. Finally, we show that the exchange splitting and band filling have a large effect on the bias dependence of the TMR.

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Section: Introductionmentioning

confidence: 99%

Spin-transfer torque in magnetic tunnel junctions

et al. 2009

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“…Spin torque (ST) from spin-polarized current applied to a metallic ferromagnet 1,2,3,4 can induce steady-state oscillations of this magnetization and thereby generate a microwave signal 5,6,7 . The frequency of the microwave signal is tunable by the direct current bias, and thus such nanostructures function as microwave voltage-controlled oscillators of nanoscale dimensions.…”

Section: Introductionmentioning

confidence: 99%

Micromagnetic simulations of magnetization dynamics in a nanowire induced by a spin-polarized current injected via a point contact

Berkov

Boone

2011

Phys. Rev. B

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We present a detailed numerical analysis of the magnetization auto-oscillations induced in a thin NiFe nanowire by a direct spin polarized current injected via a square-shaped CoFe nanomagnet (a system experimentally studied in C. Boone et al., Phys. Rev. B 79, 140404 (2009)). We demonstrate that all auto-oscillation modes in the nanowire are localized under the nanocontact for magnetic field applied in the plane of the nanowire. This mode localization is induced by a strong stray magnetic field acting on the NiFe nanowire from the CoFe current injector. We find that the auto-oscillation frequency, power and the frequency shift with the current strongly depend on the exchange constant of NiFe. We also find that the auto-oscillation power depends non-monotonically on the CoFe saturation magnetization, and demonstrate that this effect has its origin in resonant excitation of the CoFe eigenmodes by magnetization oscillations in the NiFe nanowire. The calculated dependence of the oscillation frequency on current is in a good agreement with the experiment. However, the agreement between theory and experiment for the oscillation power is unsatisfactory. Finally, we have shown that an auto-oscillatory mode propagating along the nanowire in the system under study is possible when a sufficiently strong out-of-plane field is applied.

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“…An important example is the nonequilibrium spin-current induced torque ͑briefly, spin torque͒, which one ferromagnet can exert on the magnetization vector of a second magnet through a normal metal. This torque can be large enough to dynamically turn magnetizations, 4 which is potentially interesting as a lowpower switching mechanism for magnetic random access memories. 5 The spin torque is also essential for magnetic devices such as the spin-flip transistor, [6][7][8] detection of spin precession, 9 the Gilbert damping of the magnetization dynamics in thin magnetic films, 10 and spin injection induced by ferromagnetic resonance.…”

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confidence: 99%

Universal angular magnetoresistance and spin torque in ferromagnetic/normal metal hybrids

et al. 2003

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The electrical resistance of ferromagnetic/normal-metal (F/N) heterostructures depends on the nature of the junctions that may be tunnel barriers, point contacts, or intermetallic interfaces. For all junction types, the resistance of disordered F/N/F perpendicular spin valves as a function of the angle between magnetization vectors is shown to obey a simple universal law. The spin-current induced magnetization torque can be measured by the angular magnetoresistance of these spin valves. The results are generalized to arbitrary magnetoelectronic circuits.

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Erratum: Excitation of a Magnetic Multilayer by an Electric Current [Phys. Rev. Lett. 80, 4281 (1998)]

Cited by 139 publications

References 0 publications

Spin-transfer torque in magnetic tunnel junctions

Spin-transfer torque in magnetic tunnel junctions

Micromagnetic simulations of magnetization dynamics in a nanowire induced by a spin-polarized current injected via a point contact

Universal angular magnetoresistance and spin torque in ferromagnetic/normal metal hybrids

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