Erratum: “Influence of N on the electronic properties of GaAsN alloy films and heterostructures” [J. Appl. Phys. 102, 103710 (2007)]

Reason, M.; Jin, Y.; McKay, H. A.; Mangan, Niall M.; Mao, Dan; Goldman, R. S.; Bai, X.; Kurdak, Çağlıyan

doi:10.1063/1.2832754

Cited by 2 publications

(4 citation statements)

References 2 publications

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“…1. Figure 2 shows the calculated carrier concentration dependence of the mobility for different N concentrations, at 300 K. The trend is different from that reported by Shan et al [3], but it is consistent with experimental results reported in the literature [11,24,26]. The saturation of the mobility at low carrier concentration has been previously reported in Ref.…”

Section: Resultssupporting

confidence: 86%

Hall mobilities in GaN_xAs_1‐x

Olea

Walukiewicz

et al. 2010

Phys. Status Solidi (c)

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In this work we report a systematic study of the electron and hole mobilities of GaNxAs1‐x alloys with different dopants (Zn, Te) and carrier concentrations (1017‐1019 cm‐3). We found a very slight reduction of the hole mobility in p‐GaNxAs1‐x compared to p‐GaAs, indicating that for small N contents (∼1.6%) the valence band is not affected by the N incorporation. In a striking contrast, incorporation of even small amounts of N leads to an abrupt reduction of the electron mobility in n‐GaNxAs1‐x. We further show that the processes that limit the mobility in GaNxAs1‐x can be explained by the band broadening and the random field scatterings. Considering these two scattering mechanisms we calculated the dependence of electron mobilities on electron concentration as well as on N composition in GaNxAs1‐x. The calculations agree reasonably well with experiment data of maximum electron mobilities with alloy composition. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultssupporting

confidence: 86%

Hall mobilities in GaN_xAs_1‐x

Olea

Walukiewicz

et al. 2010

Phys. Status Solidi (c)

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“…Especially, the electron transport in the base layer of solar cell, p-(In)GaAsN, is much important since the most of photocurrent was generated in the base layer in multi-junction solar cell. When the nitrogen amount of GaAsN increased to be 0.5 %, the electron mobility at room temperature was decreased to be approximately 300 cm 2 /Vs, which was one order lower than that of GaAs [8]. The origins of the mobility reduction have been considered as; (1) scattering by the isolated nitrogen atoms, (2) scattering due to the nitrogen pairs or larger clusters, (3) other impurities and lattice defects-related scatterings, and (4) effects of increased electron effective mass.…”

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confidence: 93%

“…The nitrogenrelated localized levels play important role to reduce the band gap energy in description of band anti-crossing model [7]. However, the nitrogen incorporation rapidly decreased the electron mobility of GaAsN while the hole mobility did not significantly change [8][9][10][11][12]. Generating current in solar cell application, the photo-excited minority carriers need to reach to the pn junction during thermal diffusion.…”

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confidence: 99%

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Dominant mechanisms of electron scattering in ultra‐dilute GaAsN

Inagaki

Ikeda

Kowaki

et al. 2013

Phys. Status Solidi C

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The dominant electron scattering mechanisms in GaAsN were investigated by analysing the Hall electron mobility and photoluminescence (PL) spectrum. The GaAsN thin films were grown by chemical beam epitaxy. The temperature dependence of the electron mobility indicated that polar optical phonon (POP) scattering was dominant in GaAs and GaAs:N0.0003 near room temperature. By increasing nitrogen compositions up to around 0.1%, the temperature dependence of the electron mobility became from T‐1.23 to T‐0.5. It indicated that the dominant scattering changed from POP to alloy scattering with nitrogen composition. The full width at half maximum of the PL spectra suggested that the large potential fluctuation at conduction band edge did not exist in GaAsN grown by chemical beam epitaxy. The theoretical electron mobility of POP and alloy scattering with large effective mass which was obtained by Masia et al., Dennecker et al., and Ibáñez et al. agreed with the determined electron mobility. Therefore, the POP and alloy scattering with the large effective mass were considered to be the origin of the low electron mobility of GaAsN. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Erratum: “Influence of N on the electronic properties of GaAsN alloy films and heterostructures” [J. Appl. Phys. 102, 103710 (2007)]

Cited by 2 publications

References 2 publications

Hall mobilities in GaN_xAs_1‐x

Hall mobilities in GaN_xAs_1‐x

Dominant mechanisms of electron scattering in ultra‐dilute GaAsN

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Erratum: “Influence of N on the electronic properties of GaAsN alloy films and heterostructures” [J. Appl. Phys. 102, 103710 (2007)]

Cited by 2 publications

References 2 publications

Hall mobilities in GaNxAs1‐x

Hall mobilities in GaNxAs1‐x

Dominant mechanisms of electron scattering in ultra‐dilute GaAsN

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Product

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Hall mobilities in GaN_xAs_1‐x

Hall mobilities in GaN_xAs_1‐x