2017
DOI: 10.7567/jjap.56.129206
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Erratum: “Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics”

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“…Particularly, the MIC using Au catalyst is gaining interest, with respect to the lower temperature process and the crystalline quality [16]. Most of reports related to the Au-induced crystallization (GIC) technique aim to fabricate a single-crystalline GOI (sc-GOI) layer, and therefore, they use low annealing temperature below 300°C and long annealing time of 50-150 h [17][18][19][20]. In order to lower the thermal conductivity, however, poly-crystalline GOI (pc-GOI) is preferable rather than sc-GOI since the mean-free-path of phonons is expected to be decreased due to an increase in scattering at the grain boundary, which leads to suppression of thermal conduction.…”
Section: Introductionmentioning
confidence: 99%
“…Particularly, the MIC using Au catalyst is gaining interest, with respect to the lower temperature process and the crystalline quality [16]. Most of reports related to the Au-induced crystallization (GIC) technique aim to fabricate a single-crystalline GOI (sc-GOI) layer, and therefore, they use low annealing temperature below 300°C and long annealing time of 50-150 h [17][18][19][20]. In order to lower the thermal conductivity, however, poly-crystalline GOI (pc-GOI) is preferable rather than sc-GOI since the mean-free-path of phonons is expected to be decreased due to an increase in scattering at the grain boundary, which leads to suppression of thermal conduction.…”
Section: Introductionmentioning
confidence: 99%