Journal of Crystal Growth
 2010
DOI: 10.1016/j.jcrysgro.2010.01.012
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Erratum to “Enhancement effect of nitrogen co-doping on oxygen precipitation in heavily phosphorus-doped Czochralski silicon during high-temperature annealing” [J. Cryst. Growth 311 (2009) 3273–3277]

Yuheng Zeng
1
,
Jiahe Chen
2
,
Miangyang Ma
3
et al.
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