2013
DOI: 10.1007/s10512-013-9636-8
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Erratum to the article “Effect of Prior Structural Defects in Quartz Fiber Lightguides on Defect Formation by γ Radiation,” by N. Akchurin, M. Kh. Ashurov, M. I. Baidzhanov, Zh. D. Ibragimov, I. R. Rustamov, E. M. Gasanov, I. Nuritdinov, and B. S. Yuldashev, Vol. 104, No. 1, pp. 33–37, January, 2008.

Abstract: The third author's name was misspelled. The correct spelling is M. I. Baydjanov.

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“…14) The formation of NBOHC occurs at the expense of mostly preliminary defects (strained and ruptured Si-O-Si bonds, Si-OH) created by the OF drawing process, and by the rupture of Si-O-Si bonds with the simultaneous formation of -induced E 0 -centers and NBOHC. 15) It can be suggested that the 450 nm luminescence band is caused by the recombination of holes with trapped electrons of E 0 -centers. The increase in the 450 nm luminescence band intensity can be explained by the formation of E 0 -centers by preliminary (drawing-induced) defects (Si-H, ruptured and strained Si-O-Si bands) and the formation of additional E 0 -centers by the rupture of Si-O-Si bands under the influence of -rays.…”
Section: Resultsmentioning
confidence: 99%
“…14) The formation of NBOHC occurs at the expense of mostly preliminary defects (strained and ruptured Si-O-Si bonds, Si-OH) created by the OF drawing process, and by the rupture of Si-O-Si bonds with the simultaneous formation of -induced E 0 -centers and NBOHC. 15) It can be suggested that the 450 nm luminescence band is caused by the recombination of holes with trapped electrons of E 0 -centers. The increase in the 450 nm luminescence band intensity can be explained by the formation of E 0 -centers by preliminary (drawing-induced) defects (Si-H, ruptured and strained Si-O-Si bands) and the formation of additional E 0 -centers by the rupture of Si-O-Si bands under the influence of -rays.…”
Section: Resultsmentioning
confidence: 99%