Erratum: “Two-step cycling process alternating implantation and remote plasma etching for topographically selective etching: Application to Si3N4 spacer etching” [J. Appl. Phys. 126, 243301 (2019)]

Renaud, Vincent; Petit-Etienne, C.; Barnes, Jean‐Paul; Bisserier., J; Joubert, O.; Pargon, E.

doi:10.1063/5.0008898

Cited by 3 publications

(12 citation statements)

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“…The plasma reactor used in this study is a 300mm prototype chamber presented in figure 3. This reactor was well described by Renaud et al [4]. Briefly, it includes a remote plasma source (RP) and a capacitively coupled plasma (CCP) source.…”

Section: Plasma Reactormentioning

confidence: 99%

“…The downstream plasma unit is alimented by a RF power supply (13,56MHz) separated from the CCP unit by showerheads that block the ions so that only the reactive neutrals reach the substrate. The selective removal of the modified layer uses a gas mixture of He/NH3/NF3 at 2,5 Torr with a power of 250W [4]. Figure 3.…”

Section: Plasma Reactormentioning

confidence: 99%

“…The etch kinetics of implanted and pristine SiN during the remote plasma step are monitored using a kinetic ellipsometer directly connected to the chamber. A model composed of the SiN layer and the salt layer is used to fit the ellipsometric data during the etch process [4]. Transmission electron microscopy (TEM) is performed to evaluate the spacer consumption and profile after etching.…”

Section: Characterizationsmentioning

confidence: 99%

“…The concept was initially developed using two different tools for the implantation and the removal steps [1]. More recently, our group showed that those two steps can be carried out in the same reactor chamber [4]. This reactor is a prototype offering two operating modes: a CCP discharge used for the implantation step and a remote plasma (RP) discharge used for the selective removal.…”

Section: Introductionmentioning

confidence: 99%

“…When cycling the two steps, this outgassing happens between the removal step and the next implantation step leaving a pristine SiN at the end of each cycle. Promising results were obtained on blanket films with selectivity over non-modified silicon nitride and the underlying silicon however the process was not tested on patterned samples [4].…”

Section: Introductionmentioning

confidence: 99%

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Cycling of implantation step and remote plasma process step for nitride spacer etching applications.

Loubet

Jenny

Petit-Etienne

et al. 2020

Advanced Etch Technology for Nanopatterning IX

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The etching of silicon nitride spacers is one of the most challenging steps of transistor fabrication. It requires anisotropy to preserve the sidewalls and a high etch selectivity over the underlying substrate to achieve a high surface quality. Recently, an interesting approach using a two step-process was proposed for the etching of silicon nitride spacers with high anisotropy and minimal induced damage [1]. The first step uses an H2 implantation to selectively modify the horizontal SiN surfaces over the vertical ones, while the second step selectively removes the modified layer either via HF exposure or via a remote plasma (RP). This paper explores a new route to implement those two steps in a cycling process achieved in the same plasma reactor chamber. The reactor has the capability to produce both a capacitive plasma discharge (CCP) for the implantation step and a remote discharge for the removal step. This study demonstrates that the remote plasma process, whose etching mechanisms are driven by reactive neutrals, is highly sensitive to the material surface state and consequently an incubation time exists before the etching starts when exposed to neutrals. The modifications induced by the first implantation step shortens the incubation time offering a process window with infinite etch selectivity between horizontal implanted and vertical non-implanted surfaces. Based on this understanding a two-step cycling process was developed and applied successfully to the etching of Si3N4 spacer patterns for imager applications.

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Section: Plasma Reactormentioning

confidence: 99%

Section: Plasma Reactormentioning

confidence: 99%

Section: Characterizationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Cycling of implantation step and remote plasma process step for nitride spacer etching applications.

Loubet

Jenny

Petit-Etienne

et al. 2020

Advanced Etch Technology for Nanopatterning IX

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Importance of higher‐level excited species in argon remote plasma sources: Numerical modeling with consideration of detailed chemical reaction pathways

Cheon

Yoon

et al. 2022

Plasma Processes & Polymers

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Stable plasma ignition of remote plasma sources (RPSs) for various plasma processes is essential to ensure the stability of the discharge, steady operating conditions, and high plasma density. In an RPS in which the gas pressure exceeds 1 Torr, the reaction paths leading to the high-level excited state play an essential role in the power balance and energy cascade at high applied input power. In this study, 97 chemical reactions in a detailed reaction set involving argon discharge are investigated in the steady-state to understand the extent to which the dominant reactions are affected by variations in the process parameters. We observed that the stepwise ionization process of the argon 4p excited state significantly contributes to sustaining high-density plasmas in the near 1 Torr regime.

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Vacuum ultraviolet-absorption spectroscopy and delocalized plasma-induced emission used for the species detection in a down-stream soft-etch plasma reactor

Soriano

Cunge

Sadeghi

2020

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The VUV-absorption spectroscopy (AS) and the emission spectroscopy (ES) from delocalized probe plasma, are implemented in the downstream chamber of a soft-etch industrial plasma reactor. A CCP plasma, running in the upper compartment in He/NF3/NH3/H2 mixtures at about one Torr, produces reactive species which flow through a shower head into a downstream chamber, where they can etch different µ-electronics materials: Si, SiO2, SiN,... The ES reveals the presence of F and H atoms, while the dissociation rates of NF3 and NH3 are deduced from the AS, as well as the density of HF molecules, produced by chemical chain-reactions between dissociation products of NF3, NH3 and H2.

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Erratum: “Two-step cycling process alternating implantation and remote plasma etching for topographically selective etching: Application to Si3N4 spacer etching” [J. Appl. Phys. 126, 243301 (2019)]

Cited by 3 publications

References 0 publications

Cycling of implantation step and remote plasma process step for nitride spacer etching applications.

Cycling of implantation step and remote plasma process step for nitride spacer etching applications.

Importance of higher‐level excited species in argon remote plasma sources: Numerical modeling with consideration of detailed chemical reaction pathways

Vacuum ultraviolet-absorption spectroscopy and delocalized plasma-induced emission used for the species detection in a down-stream soft-etch plasma reactor

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