in a fully standardized manner with, for instance, no extra light, heat, or active areas involved. [4] By contrast, widely discussed parameters (i.e., charge-carrier mobility and threshold voltage, V T ) for organic field-effect transistors (OFETs) are model parameters, meaning that the numbers are inherently dependent on the model used as well as the procedure followed to implement this model. [5,6] Therefore, the lack of consensus may lead to discrepancies in parameters extracted even from the same current-voltage curve.In 2004, Horowitz et al. summarized and extended a series of their earlier works to clarify nonidealities, or disagreement with metal-oxide-semiconductor field-effect transistors (MOSFETs) in OFET devices. [7] As illustrated here, gate-voltage (V G ) dependence of mobility and existence of the contact resistances (R c ) are two common and theoretically justifiable sources of deviations from ideal MOSFET characteristics. Until recently, many experimental studies employed techniques such as the transmission-line method (TLM) or gated fourpoint probe measurements (gFPP), which can in principle directly probe these phenomena by separating the channel and contact properties. [8][9][10][11][12][13][14] In our view, the reported data bring strong evidence for the pronounced variability in relative strengths, and voltage-or structure dependence of the contact and channel effects, which makes different theoretical frameworks often necessary to understand different devices. Nonetheless, the MOSFET current-voltage model has been employed quite universally for simple parameter extraction. In 2016, Gundlach and co-workers used impedance spectroscopy to systematically address mobility overestimation in rubrene single-crystal transistors, [15] an issue that in fact originates from neglecting R c and/or noncontextually adopting simplified equations. In this context, it is timely to critically reassess basic assumptions of the device parameters, specific behavioral nonidealities, and associated calculation issues. Ideally, growing efforts into such a process will be transformed into carefully thought-out and broadly accepted practices for OFET research.In this article, we report on the use of scanning Kelvin probe microscopy (SKPM) and correlated analysis aimed at generalizable parameterization. SKPM is a powerful, surface-sensitive technique that can directly probe critical resistive pathways in OFETs to quantify material-and interface-related parameters. Furthermore, SKPM holds some advantages over the TLM or gFPP in that neither averaging Taking full account of the contact effects and including an explicit threshold voltage in calculation are shown to be critical to access the intrinsic carrier mobility, while simple derivative-based extraction may over-or underestimate it. Further analytical developments correlate individual physical parameters, leading to the discovery that pentafluorobenzenethiol self-assembled on gold predominantly affects the carrier mobility rather than the injection barrier.