2016 IEEE International Reliability Physics Symposium (IRPS) 2016
DOI: 10.1109/irps.2016.7574638
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Error characterization and mitigation for 16nm MLC NAND flash memory under total ionizing dose effect

Yue Li
1
,
Douglas Sheldon
2
,
Andre S. Ramos
3
et al.
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Cited by 4 publications
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Flash memories in high radiation environments: LDPC decoder study

Sala
1
,
Schoeny
2
,
Kabir
3
et al. 2017
2017 51st Asilomar Conference on Signals, Systems, and Computers
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Flash memories in high radiation environments: LDPC decoder study

Sala
1
,
Schoeny
2
,
Kabir
3
et al. 2017
2017 51st Asilomar Conference on Signals, Systems, and Computers
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On Nonuniform Noisy Decoding for LDPC Codes With Application to Radiation-Induced Errors

Sala
1
,
Schoeny
2
,
Kabir
3
et al. 2017
IEEE Trans. Commun.
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New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory

Buddhanoy
1
,
Sakib
2
,
Surendranathan
3
et al. 2022
IEEE Trans. Device Mater. Relib.
1
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