ESR observation of Frenkel defect production by post-irradiation electron-hole recombination in KC1

Keller, F. J.; Patten, F.W.

doi:10.1016/0038-1098(69)90107-0

Cited by 51 publications

(3 citation statements)

References 12 publications

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“…Kingsley also showed that excess electrons were captured by VK-centres. Such electron-VEcentre recombination could be capable of producing vacancy-interstitial pairs, according to the excitonic mechanism, but the net increase in defect concentration would be very small owing to low efficiency [17], this being consistent with Kingsley's result that…”

Section: Cvstal Thickness Lcm) -supporting

confidence: 65%

Temperature Dependence of Defect Production in KBr and KCl (I)

Comins

1971

Physica Status Solidi (b)

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The rate of production of defects by ionizing radiation in Harshaw KBr and KCl has been studied as a function of temperature. It is found that the production rate increaees in a fairly progressive manner between 81 and about 200 OK. A correlation is found between the increaees in defect production and a progressive broadening of the V-centre absorption envelopes formed a t the various temperatures of irradiation. Studies of the growth of the major V-centres responsible for these absorption envelopes show that they are interstitial defects. It is considered that the enhanced defect production results from an increaeed probability of interstitial trapping as the temperature of irradiation is raised, and that the interstitial defects are trapped in clusters, either intrinsic or nucleated by impurities. Die Defekterzeugungerate durch ionisierende Bestrahlung wird in Harshaw-KBr und -KO als Funktion der Temperatur untersucht. Es zeigt sich, daB die Erzeugungsrate imTemperaturbereich zwischen 81 und etwa 200 O K progressiv zunimmt. Man findet einen Zusammenhang zwischen der zunehmenden Defekterzeugung und der Verbreiterung der V-Zentren-Absorptionskumen bei verschiedenen Bestrahlungstemperaturen. Untersuchungen der Wachstumsrate der maagebenden V-Zentren, die fur diese Abeorptionskurven verantwortlich sind, ergeben, daB diese von ,,Zwischengitte~tijrungen" herriihren. Es wird angenommen, daB mit zunehmender Bestrahlungstemperatur die griiBere Wahrscheinlichkeit eines ,,Zwischengitter-Einfangprozews" fur die erhohte Defekterzeugung verantwortlich ist. Ebenso wird angenommen, daB die Zwischengitterstiingen an Agglomeraten eingefangen werden, die entweder urspriinglich vorhanden waren oder durch Fremdatome gebildet werden.

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Section: Cvstal Thickness Lcm) -supporting

confidence: 65%

Temperature Dependence of Defect Production in KBr and KCl (I)

Comins

1971

Physica Status Solidi (b)

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“…Ultraviolet colorability experiments are in accord with this (22). EPR evidence has recently come forth (23) which shows directly that, when an electron combines with a self-trapped hole (Xe-) at sufficiently high temperatures, an interstitial halogen atom and a vacancy are formed. This provides fairly conclusive evidence for an excitonic mechanism in accordance with the following (21) uv X-+ X---~V-~ X2 =* formation of self-trapped exciton [10] X._, = * ---> Xi + ~ + X-formation of H and F centers [11] Thus, through the formation of a covalent bond between the excited and a normal halide ion, the potential energy imparted to the ion by an almost momentless photon can be converted into kinetic energy: sufficient momentum has been gained to move a massive ion.…”

Section: Intrinsic Luminescence and Colorationmentioning

confidence: 63%

Connections between Color Center Phenomena and Luminescence Phenomena in General

Hersh

1971

J. Electrochem. Soc.

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Alkali halide research has occupied a central position in solid‐state physics. Its teachings are transferable to other fields. A modern synthesis of alkali halide research relevant to luminescence phenomena in general is presented. The relationship between the mechanisms of coloration and luminescence in alkali halides is described. The concepts of nonmoving excitons and of self‐trapping are discussed and used to explain intrinsic luminescence in all alkali halides and the scintillation mechanism in thallium‐activated alkali halides in an atomistic way. The possible importance of self‐trapping, lattice relaxation, internal metastable states, molecules in crystals, etc., in the luminescence of some conventional phosphors is pointed out.

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“…The investigations of this type were performed mainly in Me+ (Tl+, Agf, Ga+, In+)-doped alkali halide crystals in which both trapped-hole (Me2+) and trapped-electron (Meo) impurity centres are formed. Optical stimulation of these centres results, even a t lowest teniperatures, in generation of free electrons and free holes [5], the latter species being responsible for the appearance of H-and Vk-type centres.…”

Section: Introductionmentioning

confidence: 99%

Photostimulated low‐temperature recombination luminescence in γ‐irradiated KCl:Eu²⁺ crystals

Opyrchal

Nierzewski

1979

Physica Status Solidi (b)

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A strong, few seconds lasting post-luminescence due to Eu2+ emission is excited a t 15 K by light flashes in KCI:Eu2+ crystals coloured by y-rays a t RT. Within the range of 15 to 70 K the intensity of post-luminescence varies in inverse proportion to the time and does not depend on temperature. Thermoluminescence glow curves photostimulated a t 15 K point to the existence of several glow peaks most of which are due to the thermal activation of trapped-hole centres of H-and Vk-type.The plausible mechanisms responsible both for post-luminescence and thermoluminescence as well as the role of Eu2+ ions are discussed.Starke, einige Sekunden dauernde Nachlumineszenz in y-bestrahlten KCl: Eu2+-Kristallen wird durch Lichtblitze bei 15 K angeregt. Im Temperaturbereich von 15 bis 70 K zeigt die Photolumineszenzintensitat eine hyperbolische Zeitabhangigkeit, typisch fur einen TunnelrekombinationsprozeB. Die Thermolumineszenzglowkurven, die man nach optischer Anregung bei 15 K beobachtet, bestehen aus mehreren Glowmaxima, die meistens mit der thermischen Aktivierung verschiedcner Defektelektronenzentren ubereinstimmen. Wahrscheinliche Mechanismen, die verantwortlich fur Nachlumineszenz undThermolumineszenz sind, sowie die Rolle vonEu2+-Ionen werden diskutiert.

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ESR observation of Frenkel defect production by post-irradiation electron-hole recombination in KC1

Cited by 51 publications

References 12 publications

Temperature Dependence of Defect Production in KBr and KCl (I)

Temperature Dependence of Defect Production in KBr and KCl (I)

Connections between Color Center Phenomena and Luminescence Phenomena in General

Photostimulated low‐temperature recombination luminescence in γ‐irradiated KCl:Eu²⁺ crystals

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ESR observation of Frenkel defect production by post-irradiation electron-hole recombination in KC1

Cited by 51 publications

References 12 publications

Temperature Dependence of Defect Production in KBr and KCl (I)

Temperature Dependence of Defect Production in KBr and KCl (I)

Connections between Color Center Phenomena and Luminescence Phenomena in General

Photostimulated low‐temperature recombination luminescence in γ‐irradiated KCl:Eu2+ crystals

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Photostimulated low‐temperature recombination luminescence in γ‐irradiated KCl:Eu²⁺ crystals