ESR Study of Phosphorus Implanted Type IIa Diamond

Abstract

Cold Implantation and Rapid Annealing (CIRA) at 1050 C of P in IIa diamond crystal, then further annealing at 1400 C were performed. EPR signals were obtained in particular (i) around g 2.003, from``dangling bondº defects whose total concentration increases with the dose and decreases after annealing, but remains higher than the dose, (ii) a pair of isotropic symmetrical signals with a constant DH 28 G independent of the dose and of annealing were detected. They are ascribed to paramagnetic P in substitutional sites. For the highest dose after annealing, an IR absorption can be detected at energies corresponding to transitions between the fundamental and the excited levels of the effective mass like P donor center in diamond. The calculated donor density from IR is in agreement with the density of spins in the 28 G hyperfine lines. N. Casanova et al.: ESR Study of Phosphorus Implanted Type IIa Diamond 5 1 )

On Enabling Nanocrystalline Diamond for Device Use: Novel Ion Beam Methodology and the Realization of Shallow N-Type Diamond

“…Specific n-type diamond reports have shown experimental studies with exceedingly high dopant activation energy, low carrier concentration and/or low carrier mobility under ambient conditions resulting in high series resistances [4] or were thought to be either graphitic-like (i.e. reconstructed through donor segregation) or ptype in conduction type [3], where carrier compensation is known to increase with dopant segregation still rendering rather high series resistances [5]. In particular, phosphorus, deemed the most suitable theoretical substitutional n-type dopant [6] (with donor activation energy experimentally reported in the range of 485 meV to 600 meV), has proven to be challenging with respect to nearly all doping methodologies largely differing from the shallow donor state observed in both silicon and germanium.…”

“…As such, the potential material performance advantages are well known in the community as are the remaining issues preventing progress, namely maintaining crystallinity [1] and functional n-type diamond [2]. With respect to the various diamond doping techniques, it is generally understood that only deep level donors have been demonstrated to date, excluding so called graphitically-connected diamond [3]. Specific n-type diamond reports have shown experimental studies with exceedingly high dopant activation energy, low carrier concentration and/or low carrier mobility under ambient conditions resulting in high series resistances [4] or were thought to be either graphitic-like (i.e.…”

Electron Spin Resonance of Phosphorus in n-Type Diamond

“…1b from this transport regime is assigned to the contact regions rather than to the conductivity of the P-doped film itself. The isotropic g-factor g = 2.0028 and linewidth DH pp $ 7 G of this resonance agree well with that of carbon dangling bonds in polycrystalline diamond [10], and in crystalline thin CVD diamond films after implantation [11,12]. The same EDMR signal has been observed previously in polycrystalline CVD diamond films with high defect density [13].…”

“…The second, almost isotropic center from Refs. [11] and [12] has been observed recently together with the characteristic infrared absorption at 0.52 and 0.56 eV also present in the n-type samples of this study, suggesting that shallow states give rise to this ESR signal [12]. Because the implanted samples have a large number of additional defects besides the phosphorus-related states, n-type conductivity has not been confirmed for them yet.…”

EPR of new phosphorus‐containing centers in synthetic diamonds

“…The pursuit of synthesizing diamonds exhibiting n‐type conductivity has stimulated the emergence of a number of publications devoted to EPR examination of synthetic diamonds activated by phosphorus impurities . It was demonstrated in Refs.…”